Patents by Inventor Yamanishi Kenichiro

Yamanishi Kenichiro has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of producing silicon dioxide films
    Patent number: 4624859
    Abstract: A method of producing silicon dioxide films for use as insulating films in semiconductor elements, wherein the composition proportion of silicon and oxygen atoms and the bond thereof are satisfactory so that no pinholes are present, and a film of high density is obtained. The method includes heating a material of silicon or silicon oxides 11 thereby to vaporize the same in a gas ambient consisting mainly of oxygen atoms in a vacuum container 18; ionizing or exciting the vaporized material; and accelerating the ionized material so as to collide with the surface of a substrate 17, thereby producing a silicon dioxide film on the substrate 17.
    Type: Grant
    Filed: July 10, 1985
    Date of Patent: November 25, 1986
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Shuhara Akira, Yamanishi Kenichiro, Minowa Yoshibumi