Patents by Inventor Yamato Aihara
Yamato Aihara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9927654Abstract: It is an object to provide a display device of which image display can be favorably recognized. Another object is to provide a manufacturing method of the display device with high productivity. Over a substrate, a pixel electrode that reflects incident light through a liquid crystal layer, a light-transmitting pixel electrode, and a structure whose side surface is covered with a reflective layer and which is positioned to overlap with the light-transmitting pixel electrode are provided. The structure is formed over a light-transmitting etching-stop layer, and the etching-stop layer remains below the structure as a light-transmitting layer.Type: GrantFiled: April 3, 2015Date of Patent: March 27, 2018Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Masami Jintyou, Yamato Aihara
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Patent number: 9337218Abstract: In the liquid crystal display device in which a guest-host liquid crystal layer is provided between a first substrate having a reflective film which is a pixel electrode layer (also referred to as a first electrode layer) and a second substrate having a common electrode layer (also referred to as a second electrode layer), the reflective film which is a pixel electrode layer is projected into the liquid crystal layer, and a micron-sized first unevenness and a nano-sized second unevenness on the first unevenness are provided.Type: GrantFiled: September 27, 2013Date of Patent: May 10, 2016Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yamato Aihara, Masami Jintyou, Rai Sato, Toru Arakawa
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Patent number: 9252248Abstract: An object is to provide a technique by which a semiconductor device including a high-performance and high-reliable transistor is manufactured. A protective conductive film which protects an oxide semiconductor layer when a wiring layer is formed from a conductive layer is formed between the oxide semiconductor layer and the conductive layer, and an etching process having two steps is performed. In a first etching step, an etching is performed under conditions that the protective conductive film is less etched than the conductive layer and the etching selectivity of the conductive layer to the protective conductive film is high. In a second etching step, etching is performed under conditions that the protective conductive film is more easily etched than the oxide semiconductor layer and the etching selectivity of the protective conductive film to the oxide semiconductor layer is high.Type: GrantFiled: April 9, 2015Date of Patent: February 2, 2016Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Masami Jintyou, Yamato Aihara, Katsuaki Tochibayashi, Toru Arakawa
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Publication number: 20150316818Abstract: It is an object to provide a display device of which image display can be favorably recognized. Another object is to provide a manufacturing method of the display device with high productivity. Over a substrate, a pixel electrode that reflects incident light through a liquid crystal layer, a light-transmitting pixel electrode, and a structure whose side surface is covered with a reflective layer and which is positioned to overlap with the light-transmitting pixel electrode are provided. The structure is formed over a light-transmitting etching-stop layer, and the etching-stop layer remains below the structure as a light-transmitting layer.Type: ApplicationFiled: April 3, 2015Publication date: November 5, 2015Inventors: Masami JINTYOU, Yamato AIHARA
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Publication number: 20150214343Abstract: An object is to provide a technique by which a semiconductor device including a high-performance and high-reliable transistor is manufactured. A protective conductive film which protects an oxide semiconductor layer when a wiring layer is formed from a conductive layer is formed between the oxide semiconductor layer and the conductive layer, and an etching process having two steps is performed. In a first etching step, an etching is performed under conditions that the protective conductive film is less etched than the conductive layer and the etching selectivity of the conductive layer to the protective conductive film is high. In a second etching step, etching is performed under conditions that the protective conductive film is more easily etched than the oxide semiconductor layer and the etching selectivity of the protective conductive film to the oxide semiconductor layer is high.Type: ApplicationFiled: April 9, 2015Publication date: July 30, 2015Inventors: Masami JINTYOU, Yamato AIHARA, Katsuaki TOCHIBAYASHI, Toru ARAKAWA
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Patent number: 9040396Abstract: An object is to provide a technique by which a semiconductor device including a high-performance and high-reliable transistor is manufactured. A protective conductive film which protects an oxide semiconductor layer when a wiring layer is formed from a conductive layer is formed between the oxide semiconductor layer and the conductive layer, and an etching process having two steps is performed. In a first etching step, an etching is performed under conditions that the protective conductive film is less etched than the conductive layer and the etching selectivity of the conductive layer to the protective conductive film is high. In a second etching step, etching is performed under conditions that the protective conductive film is more easily etched than the oxide semiconductor layer and the etching selectivity of the protective conductive film to the oxide semiconductor layer is high.Type: GrantFiled: January 31, 2014Date of Patent: May 26, 2015Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Masami Jintyou, Yamato Aihara, Katsuaki Tochibayashi, Toru Arakawa
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Patent number: 9000438Abstract: It is an object to provide a display device of which image display can be favorably recognized. Another object is to provide a manufacturing method of the display device with high productivity. Over a substrate, a pixel electrode that reflects incident light through a liquid crystal layer, a light-transmitting pixel electrode, and a structure whose side surface is covered with a reflective layer and which is positioned to overlap with the light-transmitting pixel electrode are provided. The structure is formed over a light-transmitting etching-stop layer, and the etching-stop layer remains below the structure as a light-transmitting layer.Type: GrantFiled: February 18, 2011Date of Patent: April 7, 2015Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Masami Jintyou, Yamato Aihara
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Publication number: 20140147969Abstract: An object is to provide a technique by which a semiconductor device including a high-performance and high-reliable transistor is manufactured. A protective conductive film which protects an oxide semiconductor layer when a wiring layer is formed from a conductive layer is formed between the oxide semiconductor layer and the conductive layer, and an etching process having two steps is performed. In a first etching step, an etching is performed under conditions that the protective conductive film is less etched than the conductive layer and the etching selectivity of the conductive layer to the protective conductive film is high. In a second etching step, etching is performed under conditions that the protective conductive film is more easily etched than the oxide semiconductor layer and the etching selectivity of the protective conductive film to the oxide semiconductor layer is high.Type: ApplicationFiled: January 31, 2014Publication date: May 29, 2014Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Masami JINTYOU, Yamato AIHARA, Katsuaki TOCHIBAYASHI, Toru ARAKAWA
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Patent number: 8664097Abstract: An object is to provide a technique by which a semiconductor device including a high-performance and high-reliable transistor is manufactured. A protective conductive film which protects an oxide semiconductor layer when a wiring layer is formed from a conductive layer is formed between the oxide semiconductor layer and the conductive layer, and an etching process having two steps is performed. In a first etching step, an etching is performed under conditions that the protective conductive film is less etched than the conductive layer and the etching selectivity of the conductive layer to the protective conductive film is high. In a second etching step, etching is performed under conditions that the protective conductive film is more easily etched than the oxide semiconductor layer and the etching selectivity of the protective conductive film to the oxide semiconductor layer is high.Type: GrantFiled: August 30, 2011Date of Patent: March 4, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Masami Jintyou, Yamato Aihara, Katsuaki Tochibayashi, Toru Arakawa
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Publication number: 20140024154Abstract: In the liquid crystal display device in which a guest-host liquid crystal layer is provided between a first substrate having a reflective film which is a pixel electrode layer (also referred to as a first electrode layer) and a second substrate having a common electrode layer (also referred to as a second electrode layer), the reflective film which is a pixel electrode layer is projected into the liquid crystal layer, and a micron-sized first unevenness and a nano-sized second unevenness on the first unevenness are provided.Type: ApplicationFiled: September 27, 2013Publication date: January 23, 2014Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yamato AIHARA, Masami Jintyou, Rai Sato, Toru Arakawa
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Patent number: 8605240Abstract: In the liquid crystal display device in which a guest-host liquid crystal layer is provided between a first substrate having a reflective film which is a pixel electrode layer (also referred to as a first electrode layer) and a second substrate having a common electrode layer (also referred to as a second electrode layer), the reflective film which is a pixel electrode layer is projected into the liquid crystal layer, and a micron-sized first unevenness and a nano-sized second unevenness on the first unevenness are provided.Type: GrantFiled: May 9, 2011Date of Patent: December 10, 2013Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yamato Aihara, Masami Jintyou, Rai Sato, Toru Arakawa
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Patent number: 8399356Abstract: A conductive film containing aluminum or an aluminum alloy with a thickness equal to or greater than 1 ?m and equal to or less than 10 ?m is etched by wet-etching to be a predetermined thickness, and then etched by dry-etching, whereby side-etching of the conductive film can be suppressed and thickness reduction of a mask can be suppressed. The suppression of side-etching of the conductive film and the suppression of thickness reduction of the mask enable a conductive film containing aluminum or an aluminum alloy even with a large thickness equal to or greater than 1 ?m and equal to or less than 10 ?m to be etched such that the gradient of the edge portion of the conductive film can be steep, a predetermined thickness of the conductive film can be obtained, and shape difference from a mask pattern can be suppressed.Type: GrantFiled: March 20, 2009Date of Patent: March 19, 2013Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Naoya Sakamoto, Takahiro Sato, Yoshiaki Oikawa, Rai Sato, Yamato Aihara, Takayuki Cho, Masami Jintyou
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Publication number: 20120064703Abstract: An object is to provide a technique by which a semiconductor device including a high-performance and high-reliable transistor is manufactured. A protective conductive film which protects an oxide semiconductor layer when a wiring layer is formed from a conductive layer is formed between the oxide semiconductor layer and the conductive layer, and an etching process having two steps is performed. In a first etching step, an etching is performed under conditions that the protective conductive film is less etched than the conductive layer and the etching selectivity of the conductive layer to the protective conductive film is high. In a second etching step, etching is performed under conditions that the protective conductive film is more easily etched than the oxide semiconductor layer and the etching selectivity of the protective conductive film to the oxide semiconductor layer is high.Type: ApplicationFiled: August 30, 2011Publication date: March 15, 2012Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Masami JINTYOU, Yamato AIHARA, Katsuaki TOCHIBAYASHI, Toru ARAKAWA
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Publication number: 20110285945Abstract: In the liquid crystal display device in which a guest-host liquid crystal layer is provided between a first substrate having a reflective film which is a pixel electrode layer (also referred to as a first electrode layer) and a second substrate having a common electrode layer (also referred to as a second electrode layer), the reflective film which is a pixel electrode layer is projected into the liquid crystal layer, and a micron-sized first unevenness and a nano-sized second unevenness on the first unevenness are provided.Type: ApplicationFiled: May 9, 2011Publication date: November 24, 2011Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Yamato AIHARA, Masami JINTYOU, Rai SATO, Toru ARAKAWA
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Publication number: 20110210332Abstract: It is an object to provide a display device of which image display can be favorably recognized. Another object is to provide a manufacturing method of the display device with high productivity. Over a substrate, a pixel electrode that reflects incident light through a liquid crystal layer, a light-transmitting pixel electrode, and a structure whose side surface is covered with a reflective layer and which is positioned to overlap with the light-transmitting pixel electrode are provided. The structure is formed over a light-transmitting etching-stop layer, and the etching-stop layer remains below the structure as a light-transmitting layer.Type: ApplicationFiled: February 18, 2011Publication date: September 1, 2011Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Masami Jintyou, Yamato Aihara
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Publication number: 20090305503Abstract: A conductive film containing aluminum or an aluminum alloy with a thickness equal to or greater than 1 ?m and equal to or less than 10 ?m is etched by wet-etching to be a predetermined thickness, and then etched by dry-etching, whereby side-etching of the conductive film can be suppressed and thickness reduction of a mask can be suppressed. The suppression of side-etching of the conductive film and the suppression of thickness reduction of the mask enable a conductive film containing aluminum or an aluminum alloy even with a large thickness equal to or greater than 1 ?m and equal to or less than 10 ?m to be etched such that the gradient of the edge portion of the conductive film can be steep, a predetermined thickness of the conductive film can be obtained, and shape difference from a mask pattern can be suppressed.Type: ApplicationFiled: March 20, 2009Publication date: December 10, 2009Inventors: Naoya Sakamoto, Takahiro Sato, Yoshiaki Oikawa, Rai Sato, Yamato Aihara, Takayuki Cho, Masami Jintyou