Abstract: A method for fabricating a high-voltage insulated gate type bipolar semiconductor device by comparing to a reference structure of the same includes determining a width S of a mesa region in which the gate insulating film and the MOS transistor are formed, and a trench depth DT, based on a scaling ratio K, in comparison with a second width and a second trench depth of the reference structure, and setting a cell width 2W of the high-voltage insulated gate type bipolar semiconductor device to be equal in length to a second length of the reference structure, the scaling ratio K being defined as K=Y/X, where X indicates a size of a target portion to be miniaturized in the high-voltage insulated gate type bipolar semiconductor device, and Y indicates a size of a target portion to be miniaturized in the reference structure.

Abstract: A method for fabricating a high-voltage insulated gate type bipolar semiconductor device by comparing to a reference structure of the same includes determining a width S of a mesa region in which the gate insulating film and the MOS transistor are formed, and a trench depth DT, based on a scaling ratio K, in comparison with a second width and a second trench depth of the reference structure, and setting a cell width 2W of the high-voltage insulated gate type bipolar semiconductor device to be equal in length to a second length of the reference structure, the scaling ratio K being defined as K=Y/X, where X indicates a size of a target portion to be miniaturized in the high-voltage insulated gate type bipolar semiconductor device, and Y indicates a size of a target portion to be miniaturized in the reference structure.

Abstract: A high-voltage insulated gate type power semiconductor device includes a low-concentration first conductivity type base layer; a plurality of trenches selectively formed with large intervals and narrow intervals provided alternately, in a front surface of the low-concentration first conductivity type base layer; a gate insulating film formed on a surface of each of the plurality of trenches; a gate electrode formed inside the gate insulating film; and a second conductivity type base layer selectively formed between the adjacent trenches sharing the narrow interval. The high-voltage insulated gate type power semiconductor device includes a high-concentration first conductivity type source layer selectively formed on a front surface of the second conductivity type base layer.