Abstract: The disclosure provides a gallium oxide film based on sapphire substrate as well as a growth method and an application thereof. The gallium oxide film based on sapphire substrate is prepared by a method below, including: forming more than one ?-(AlxGa1?x)2O3 strain buffering layers on the sapphire substrate by means of pulsed epitaxial growth, wherein 0.99?x?0.01; and forming gallium oxide epitaxial layers on the ?-(AlxGa1?x)2O3 strain buffering layers. The growth method provided can not only avoid the technical difficulty of contradictory epitaxial temperatures of ?-Ga2O3 and ?-Al2O3, but also effectively reduce the defect density of ?-Ga2O3 epitaxial film, thus further improving the crystal quality of the ?-Ga2O3 epitaxial film materials.

Abstract: The present disclosure provides a genome-wide maize SNP array and use thereof. In the present disclosure, by means of large-scale sequencing mining, aiming at the problems of the existing high-density arrays of maize, 400 broadly representative maize inbred lines inside and outside of China are deeply sequenced to mine excellent loci therefrom, and research results of six maize arrays are integrated; by adopting the steps of biological information data analysis, locus basic parameter evaluation, probe design evaluation, a set of SNP locus combination, containing 1,536 loci, is formed, and genotyping is realized on an Affymetrix axiom platform. The genome-wide maize SNP array of the present disclosure contains probes for the 1,536 SNP loci. The array of the present disclosure can be used in DNA fingerprint construction, cultivar identification and confirmation of maize cultivars, research on germplasm resources at a genomic level, and molecular marker-assisted selective breeding.