Abstract: Implementations of the present disclosure generally relate to an apparatus for large-scale external pressure storage, and more particularly for large-scale storage of liquid hydrogen and other products that require evacuated insulation. In some examples, a plate for a storage apparatus is provided. The plate a body that includes a beveled joint with the body having a nominal thickness at the beveled joint. The beveled joint is configured to be welded to a corresponding beveled joint of an adjacent plate.

Abstract: Disclosed are a method for controlling an Internet of Things (IoT) device, and a terminal device. The method is applied to a terminal device and includes: acquiring parameter information of a triggered key of a mouse; determining a target device and target operation information acting on the target device based on the parameter information; and sending device information of the target device and the target operation information to a server.

Abstract: Implementations of the present disclosure generally relate to an apparatus for large-scale external pressure storage, and more particularly for large-scale storage of liquid hydrogen and other products that require evacuated insulation. In some examples, a plate for a storage apparatus is provided. The plate a body that includes a beveled joint with the body having a nominal thickness at the beveled joint. The beveled joint is configured to be welded to a corresponding beveled joint of an adjacent plate.

Abstract: Disclosed are a method for controlling an Internet of Things (IoT) device, and a terminal device. The method is applied to a terminal device and includes: acquiring parameter information of a triggered key of a mouse; determining a target device and target operation information acting on the target device based on the parameter information; and sending device information of the target device and the target operation information to a server.

Abstract: An electro-absorption modulator, comprising: a substrate layer, including a silicon substrate and an oxide layer disposed on the silicon substrate; top-layer silicon, formed on the oxide layer, where a waveguide layer is formed on the top-layer silicon; a doping layer, including a first doping panel and a second doping panel, where a first-type light doping area is formed on the first doping panel, a second-type light doping area is formed on the second doping panel; and a modulation layer, disposed on the waveguide layer and connected in parallel to the PIN junction. For an incident beam with a specific wavelength, when a modulating electrical signal is reversely applied to the PIN junction, a light absorption coefficient of the modulation layer for the beam changes with the modulating electrical signal, and after the beam passes through a modulation area, optical power of the beam changes.

Abstract: An electro-absorption modulator, comprising: a substrate layer, including a silicon substrate and an oxide layer disposed on the silicon substrate; top-layer silicon, formed on the oxide layer, where a waveguide layer is formed on the top-layer silicon; a doping layer, including a first doping panel and a second doping panel, where a first-type light doping area is formed on the first doping panel, a second-type light doping area is formed on the second doping panel; and a modulation layer, disposed on the waveguide layer and connected in parallel to the PIN junction. For an incident beam with a specific wavelength, when a modulating electrical signal is reversely applied to the PIN junction, a light absorption coefficient of the modulation layer for the beam changes with the modulating electrical signal, and after the beam passes through a modulation area, optical power of the beam changes.

Abstract: A method of dissolving cellulose, comprising: firstly heating and activating the cellulose by using a heating apparatus, and then dissolving by using a solvent. The temperature of the heating and the activating is 130° C.-270° C., the time period of the heating is 0.1-100 hours, and the solvent is an aqueous solution including 6 wt %-12 wt % sodium hydroxide and 0.1 wt %-6 wt % zinc oxide. The method of dissolving comprises: heating and activating the cellulose with a degree of polymerization of DP=300-700, dispersing the cellulose into the solvent, and freezing under a temperature of ?10˜-30° C. for 0.1-50 hours; then unfreezing under a condition of no more than 32° C., and standing or stirring by machine during the process of unfreezing so as to dissolve and obtain a cellulose solution with a concentration of 3 wt %-12 wt %. The obtained cellulose solution has a good solubility and stability that maintains a relatively good stability after being stood under a temperature of ?8 to 32° C. for a few days.

Abstract: A composite article that can be used as a substrate for coated conductors is disclosed. The composite substrate has at least three layers in which one or more inner layers of Ni—W alloys with 9 at. %-13 at. % W and two outer layers of Ni—W alloys with 3 at. %-9 at. % W. The content of W element gradually decreases from the inner layers to the outer layers. The composite substrate can be prepared using a process of designing and sintering composite ingot, rolling composite ingot and then annealing composite substrate. The composite substrate have a dominant cube texture on the outer layer of the whole substrate which have a weaker magnetism and higher strength than that of a single Ni-5 at. % W alloy substrate.

Abstract: A composite article that can be used as a substrate for coated conductors is disclosed. The composite substrate has at least three layers in which one or more inner layers of Ni—W alloys with 9 at. %-13 at. % W and two outer layers of Ni—W alloys with 3 at. %-9 at. % W. The content of W element gradually decreases from the inner layers to the outer layers. The composite substrate can be prepared using a process of designing and sintering composite ingot, rolling composite ingot and then annealing composite substrate. The composite substrate have a dominant cube texture on the outer layer of the whole substrate which have a weaker magnetism and higher strength than that of a single Ni-5 at. % W alloy substrate.