Patents by Inventor Yan A. Borodovsky
Yan A. Borodovsky has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10747115Abstract: Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a column for an e-beam direct write lithography tool includes a first blanker aperture array (BAA) including a staggered array of openings having a pitch along an array direction. The array direction is orthogonal to a scan direction. Each opening has a first dimension in the array direction. The column also includes a second BAA including a staggered array of openings having the pitch along the array direction. Each opening has a second dimension in the array direction, the second dimension greater than the first dimension.Type: GrantFiled: December 20, 2018Date of Patent: August 18, 2020Assignee: Intel CorporationInventor: Yan A. Borodovsky
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Patent number: 10578970Abstract: Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool includes a first column of openings along a first direction. The BAA also includes a second column of openings along the first direction and staggered from the first column of openings. The first and second columns of openings together form an array having a pitch in the first direction. A scan direction of the BAA is along a second direction, orthogonal to the first direction. The pitch of the array corresponds to half of a minimal pitch layout of a target pattern of lines for orientation parallel with the second direction.Type: GrantFiled: January 18, 2019Date of Patent: March 3, 2020Assignee: Intel CorporationInventors: Yan A. Borodovsky, Donald W. Nelson, Mark C. Phillips
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Patent number: 10386722Abstract: Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool includes a first column of openings along a first direction and having a pitch. The BAA also includes a second column of openings along the first direction and staggered from the first column of openings. The second column of openings has the pitch. A scan direction of the BAA is along a second direction, orthogonal to the first direction.Type: GrantFiled: December 19, 2014Date of Patent: August 20, 2019Assignee: Intel CorporationInventors: Yan A. Borodovsky, Donald W. Nelson, Mark C. Phillips
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Patent number: 10338474Abstract: Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. Particular embodiments are directed to implementation of an underlying absorbing and/or conducting layer for ebeam direct write (EBDW) lithography.Type: GrantFiled: June 18, 2015Date of Patent: July 2, 2019Assignee: Intel CorporationInventors: Shakul Tandon, Yan A. Borodovsky, Charles H. Wallace, Paul A. Nyhus
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Publication number: 20190155160Abstract: Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool includes a first column of openings along a first direction. The BAA also includes a second column of openings along the first direction and staggered from the first column of openings. The first and second columns of openings together form an array having a pitch in the first direction. A scan direction of the BAA is along a second direction, orthogonal to the first direction. The pitch of the array corresponds to half of a minimal pitch layout of a target pattern of lines for orientation parallel with the second direction.Type: ApplicationFiled: January 18, 2019Publication date: May 23, 2019Inventors: Yan A. BORODOVSKY, Donald W. NELSON, Mark C. PHILLIPS
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Patent number: 10290528Abstract: Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a method of real-time alignment of a wafer situated on a stage of an e-beam tool involves collecting backscattered electrons from an underlying patterned feature of the wafer while an e-beam column of the e-beam tool writes during scanning of the stage. The collecting is performed by an electron detector placed at the e-beam column bottom. The method also involves performing linear corrections of an alignment of the stage relative to the e-beam column based on the collecting.Type: GrantFiled: December 22, 2014Date of Patent: May 14, 2019Assignee: Intel CorporationInventors: Yan A. Borodovsky, Donald W. Nelson, Mark C. Phillips
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Publication number: 20190121236Abstract: Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a column for an e-beam direct write lithography tool includes a first blanker aperture array (BAA) including a staggered array of openings having a pitch along an array direction. The array direction is orthogonal to a scan direction. Each opening has a first dimension in the array direction. The column also includes a second BAA including a staggered array of openings having the pitch along the array direction. Each opening has a second dimension in the array direction, the second dimension greater than the first dimension.Type: ApplicationFiled: December 20, 2018Publication date: April 25, 2019Inventor: YAN A. BORODOVSKY
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Patent number: 10236161Abstract: Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a method of fine alignment of an e-beam tool includes projecting an electron image of a plurality of apertures of an e-beam column over an X-direction alignment feature of a wafer while moving the wafer along the Y-direction. The method also includes detecting a time-resolved back-scattered electron (BSE) detection response waveform during the projecting. The method also includes determining an X-position of every edge of every feature of the X-direction alignment feature by calculating a derivative of the BSE detection response waveform. The method also includes, subsequent to determining an X-position of every edge of every feature of the X-direction alignment feature, adjusting an alignment of the e-beam column to the wafer.Type: GrantFiled: September 18, 2015Date of Patent: March 19, 2019Assignee: Intel CorporationInventor: Yan A. Borodovsky
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Patent number: 10216087Abstract: Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool includes a first column of openings along a first direction. The BAA also includes a second column of openings along the first direction and staggered from the first column of openings. The first and second columns of openings together form an array having a pitch in the first direction. A scan direction of the BAA is along a second direction, orthogonal to the first direction. The pitch of the array corresponds to half of a minimal pitch layout of a target pattern of lines for orientation parallel with the second direction.Type: GrantFiled: December 19, 2014Date of Patent: February 26, 2019Assignee: Intel CorporationInventors: Yan A. Borodovsky, Donald W. Nelson, Mark C. Phillips
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Patent number: 10191376Abstract: Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a column for an e-beam direct write lithography tool includes a first blanker aperture array (BAA) including a staggered array of openings having a pitch along an array direction. The array direction is orthogonal to a scan direction. Each opening has a first dimension in the array direction. The column also includes a second BAA including a staggered array of openings having the pitch along the array direction. Each opening has a second dimension in the array direction, the second dimension greater than the first dimension.Type: GrantFiled: December 22, 2014Date of Patent: January 29, 2019Assignee: Intel CorporationInventor: Yan A. Borodovsky
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Patent number: 10067416Abstract: Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool is described. The BAA includes three distinct aperture arrays of different pitch.Type: GrantFiled: January 17, 2018Date of Patent: September 4, 2018Assignee: Intel CorporationInventors: Yan A. Borodovsky, Donald W. Nelson, Mark C. Phillips
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Patent number: 10014256Abstract: Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a layout for a metallization layer of an integrated circuit includes a first region having a plurality of unidirectional lines of a first width and a first pitch and parallel with a first direction. The layout also includes a second region having a plurality of unidirectional lines of a second width and a second pitch and parallel with the first direction, the second width and the second pitch different than the first width and the first pitch, respectively. The layout also includes a third region having a plurality of unidirectional lines of a third width and a third pitch and parallel with the first direction, the third width and the third pitch different than the first and second widths and different than the first and second pitches.Type: GrantFiled: December 19, 2014Date of Patent: July 3, 2018Assignee: Intel CorporationInventors: Donald W. Nelson, Yan A. Borodovsky, Mark C. Phillips
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Publication number: 20180143526Abstract: Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool is described. The BAA includes three distinct aperture arrays of different pitch.Type: ApplicationFiled: January 17, 2018Publication date: May 24, 2018Inventors: Yan A. BORODOVSKY, Donald W. NELSON, Mark C. PHILLIPS
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Patent number: 9952511Abstract: Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool is described. The BAA is a non-universal cutter.Type: GrantFiled: December 19, 2014Date of Patent: April 24, 2018Assignee: Intel CorporationInventors: Yan A. Borodovsky, Donald W. Nelson, Mark C. Phillips
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Patent number: 9899182Abstract: Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool includes a first column of openings along a first direction, each of the openings of the first column of openings having dog-eared corners. The BAA also includes a second column of openings along the first direction and staggered from the first column of openings, each of the openings of the second column of openings having dog-eared corners. The first and second columns of openings together form an array having a pitch in the first direction. A scan direction of the BAA is along a second direction, orthogonal to the first direction. The pitch of the array corresponds to half of a minimal pitch layout of a target pattern of lines for orientation parallel with the second direction.Type: GrantFiled: December 22, 2014Date of Patent: February 20, 2018Assignee: Intel CorporationInventor: Yan A. Borodovsky
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Patent number: 9897908Abstract: Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool is described. The BAA includes three distinct aperture arrays of different pitch.Type: GrantFiled: December 19, 2014Date of Patent: February 20, 2018Assignee: Intel CorporationInventors: Yan A. Borodovsky, Donald W. Nelson, Mark C. Phillips
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Publication number: 20180033593Abstract: Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a method of fine alignment of an e-beam tool includes projecting an electron image of a plurality of apertures of an e-beam column over an X-direction alignment feature of a wafer while moving the wafer along the Y-direction. The method also includes detecting a time-resolved back-scattered electron (BSE) detection response waveform during the projecting. The method also includes determining an X-position of every edge of every feature of the X-direction alignment feature by calculating a derivative of the BSE detection response waveform. The method also includes, subsequent to determining an X-position of every edge of every feature of the X-direction alignment feature, adjusting an alignment of the e-beam column to the wafer.Type: ApplicationFiled: September 18, 2015Publication date: February 1, 2018Inventor: Yan A. BORODOVSKY
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Publication number: 20170338105Abstract: Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. Particular embodiments are directed to implementation of an underlying absorbing and/or conducting layer for ebeam direct write (EBDW) lithography.Type: ApplicationFiled: June 18, 2015Publication date: November 23, 2017Inventors: Shakul TANDON, Yan A. BORODOVSKY, Charles H. WALLACE, Paul A. NYHUS
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Publication number: 20170271117Abstract: Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool includes a first column of openings along a first direction, each of the openings of the first column of openings having dog-eared corners. The BAA also includes a second column of openings along the first direction and staggered from the first column of openings, each of the openings of the second column of openings having dog-eared corners. The first and second columns of openings together form an array having a pitch in the first direction. A scan direction of the BAA is along a second direction, orthogonal to the first direction. The pitch of the array corresponds to half of a minimal pitch layout of a target pattern of lines for orientation parallel with the second direction.Type: ApplicationFiled: December 22, 2014Publication date: September 21, 2017Inventor: YAN A. BORODOVSKY
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Publication number: 20170269481Abstract: Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a column for an e-beam direct write lithography tool includes a first blanker aperture array (BAA) including a staggered array of openings having a pitch along an array direction. The array direction is orthogonal to a scan direction. Each opening has a first dimension in the array direction. The column also includes a second BAA including a staggered array of openings having the pitch along the array direction. Each opening has a second dimension in the array direction, the second dimension greater than the first dimension.Type: ApplicationFiled: December 22, 2014Publication date: September 21, 2017Inventor: YAN A. BORODOVSKY