Abstract: A method for wafer image equalization includes obtaining a wafer image, converting the wafer image into bitmap data, generating a grayscale distribution of RGB pixels according to the bitmap data, generating a grayscale cumulative probability distribution of the RGB pixels according to the grayscale distribution, generating a mapping function according to the grayscale cumulative probability distribution of the RGB pixels, converting the grayscale distribution of the RGB pixels by the mapping function into an equalized grayscale distribution of the RGB pixels, and generating an equalized wafer image according to the equalized grayscale distribution of the RGB pixels.

Abstract: The invention provides a semiconductor overlay measurement method, which comprises the following steps: providing a wafer, wherein the wafer comprises a plurality of regions arranged in an array, wherein each region contains a product number pattern, and providing a system, wherein the system comprises a data pool, a plurality of English letter patterns and numeral patterns are stored in the data pool, and finding out English letter patterns and/or the numeral patterns conforming to the product number patterns from the data pool, and splicing some English letter patterns and/or some numeral patterns into an alignment mark pattern, inputting the alignment mark pattern into the system, and performing a first overlay step on the alignment mark pattern and each product number pattern on the wafer.

Abstract: The invention relates to a method for detecting defects of a semiconductor substrate, which comprises the following steps: providing a substrate, wherein the substrate comprises at least one alignment mark; capturing the substrate to obtain a color image, wherein the color image comprises at least one first alignment mark, inputting the color image into a system, and respectively retaining a R value, a G value and a B value of the color image, so as to respectively convert the color image into a red image, a green image and a blue image, and carry out a color difference comparison step, wherein the red image, the green image and the blue image are respectively compared with a standard red image, a standard green image and a standard blue image, and finding the color difference regions on the red image, the green image and the blue image.

Abstract: The present disclosure relates to a processing apparatus and a processing method, and the processing apparatus includes a chamber, a wafer carrier, at least one air inlet and at least one electrode, wherein the wafer carrier is extended into the chamber, the gas inlet is arranged around the chamber, and the electrode is disposed on the chamber.

Abstract: Provided in the present disclosure are an anionic explosion-proof membrane and a preparation method therefor. A surface of the anionic explosion-proof membrane contains two layers of hardened coatings, wherein the hardened coatings respectively contain anionic agent particles with different concentrations and different particle sizes, and a certain gradient is present in the concentrations of the anionic agent. The anionic agent on the inner layer has a relatively high concentration and a relatively large particle size, and the negative ion agent on the outer layer has a relatively low concentration and a relatively small particle size; therefore, the explosion-proof membrane has an efficient and lasting negative ion release capacity.

Abstract: Provided are a secondary cured UV pressure-sensitive adhesive, and preparation methods for same and an explosion-proof film. The secondary cured UV pressure-sensitive adhesive is composed of the following materials, in percentages by mass: 31-35% of a hydroxyl-containing polyacrylate prepolymer, 6-9% of pentaerythritol triacrylate, 3-5% of 2-hydroxyl-3-phenoxy propane acrylate, 2-3% of an isocyanate curing agent, 2-3% of photo initiator 184, and 50% of ethyl acetate. The secondary cured UV pressure-sensitive adhesive is prepared by carrying out a thermal curing cross-linking reaction of a hydroxyl-containing polyacrylate prepolymer, pentaerythritol triacrylate and 2-hydroxyl-3-phenoxy propane acrylate by using an isocyanate curing agent, and initiating a free radical polymerization of pentaerythritol triacrylate and 2-hydroxyl-3-phenoxy propane acrylate by using photo initiator 184.

Abstract: A system for inspecting a reflective surface includes a first imaging assembly configured to take a first image of the reflective surface. The first image includes depth information. The system also includes a second imaging assembly configured to take a second image of the reflective surface. The second image includes contrast information. The system further includes a processor configured to acquire the first image and the second image, estimate a depth profile of the surface based on the depth information, correlate the depth profile with the second image, and identify a feature of the reflective surface based on the correlation.

Abstract: A method for wafer image equalization includes obtaining a wafer image, converting the wafer image into bitmap data, generating a grayscale distribution of RGB pixels according to the bitmap data, generating a grayscale cumulative probability distribution of the RGB pixels according to the grayscale distribution, generating a mapping function according to the grayscale cumulative probability distribution of the RGB pixels, converting the grayscale distribution of the RGB pixels by the mapping function into an equalized grayscale distribution of the RGB pixels, and generating an equalized wafer image according to the equalized grayscale distribution of the RGB pixels.

Abstract: Disclosed is a system and a method for information distribution. The system comprises: a server for generating a group key and its corresponding key deriving parameter, wherein the server encrypts sensitive contents by using the group key to obtain encrypted information; and terminals configured to receive the encrypted information through an open channel, extract the group key, then decrypt the encrypted information by using the group key to obtain the original content. In the group forming process, each terminal encrypts its private identifier using the public key and submits the ciphertext to the server. In information distribution process, the server transmits the ciphertext of sensitive contents and the key deriving parameter to the terminals via open channel Because private information available only to respective group members is required for calculating the group key, this mechanism ensures that the sensitive content can be transmitted securely on the open channel.

Abstract: New benzodiazepine compounds, and a preparation method therefor and the use thereof are provided. Short-acting benzodiazepine derivatives have the characteristics of a fast onset, short acting time, deep strength, being quickly metabolized, fast wake-up, etc. In anesthesia experiments on mice and rats, short-acting benzodiazepine derivatives have a comparable onset time to remazolam, but have a significantly shortened acting time and wake-up time. Moreover, some of the compounds have a significantly enhanced depth of action. Thus, the compounds have the characteristics of a faster onset, shorter acting time, greater strength of action, being metabolized faster, faster wake-up, etc. In long-term infusion anesthesia experiments on rats, compared with remazolam, the short-acting benzodiazepine derivatives have a significantly shortened wake-up time and recovery time, and have the characteristics of faster wake-up, a faster recovery, etc.

Abstract: A system for inspecting a reflective surface includes a first imaging assembly configured to take a first image of the reflective surface, the first image including depth information, a second imaging assembly configured to take a second image of the reflective surface, the second image including contrast information, and a processor configured to acquire the first image and the second image. The processor is configured to perform: estimating a depth profile of the surface based on the depth information, correlating the depth profile with the second image, and identifying a feature of the reflective surface based on the correlation.

Abstract: Disclosed is a system and a method for information distribution. The system comprises: a server for generating a group key and its corresponding key deriving parameter, wherein the server encrypts sensitive contents by using the group key to obtain encrypted information; and terminals configured to receive the encrypted information through an open channel, extract the group key, then decrypt the encrypted information by using the group key to obtain the original content. In the group forming process, each terminal encrypts its private identifier using the public key and submits the ciphertext to the server. In information distribution process, the server transmits the ciphertext of sensitive contents and the key deriving parameter to the terminals via open channel Because private information available only to respective group members is required for calculating the group key, this mechanism ensures that the sensitive content can be transmitted securely on the open channel.

Abstract: In a method for electrically doping a semiconducting material, a layer of germanium is formed having a germanium layer thickness, while in situ incorporating phosphorus dopant atoms at a concentration of at least about 5×1018 cm?3 through the thickness of the germanium layer during formation of the germanium layer. Additional phosphorus dopant atoms are ex situ incorporated through the thickness of the germanium layer, after formation of the germanium layer, to produce through the germanium layer thickness a total phosphorus dopant concentration of at least about 2×1019 cm?3.

Abstract: Methods, apparatus, and systems are provided including an electro-absorption modulator (EAM) with local temperature control for optical communication. One aspect provides an optical EAM including a semiconductor portion configured to modulate light for transmission or reception of an optical signal. The modulator includes a temperature sensing element configured to sense temperature and to provide an output signal based on the sensed temperature, and a temperature control element configured to control temperature of the semiconductor portion based on the output signal from the temperature sensing element. In one example, the semiconductor portion includes germanium silicon (GeSi).

Abstract: In a method for electrically doping a semiconducting material, a layer of germanium is formed having a germanium layer thickness, while in situ incorporating phosphorus dopant atoms at a concentration of at least about 5×1018 cm?3 through the thickness of the germanium layer during formation of the germanium layer. Additional phosphorus dopant atoms are ex situ incorporated through the thickness of the germanium layer, after formation of the germanium layer, to produce through the germanium layer thickness a total phosphorus dopant concentration of at least about 2×1019 cm?3.

Abstract: Methods, apparatus, and systems are provided including an electro-absorption modulator (EAM) with local temperature control for optical communication. One aspect provides an optical EAM including a semiconductor portion configured to modulate light for transmission or reception of an optical signal. The modulator includes a temperature sensing element configured to sense temperature and to provide an output signal based on the sensed temperature, and a temperature control element configured to control temperature of the semiconductor portion based on the output signal from the temperature sensing element. In one example, the semiconductor portion includes germanium silicon (GeSi).

Abstract: In a method of forming a photonic device, a first silicon electrode is formed, and then a germanium active layer is formed on the first silicon electrode while including n-type dopant atoms in the germanium layer, during formation of the layer, to produce a background electrical dopant concentration that is greater than an intrinsic dopant concentration of germanium. A second silicon electrode is then formed on a surface of the germanium active layer. The formed germanium active layer is doped with additional dopant for supporting an electrically-pumped guided mode as a laser gain medium with an electrically-activated n-type electrical dopant concentration that is greater than the background dopant concentration to overcome electrical losses of the photonic device.

Abstract: A system and method provides seamless switchover of a user device (UE) between a mobile data network and a wireless network while providing policy and charging control (PCC) of the data session in the mobile data network. A mobile core network component is made ASF aware to process user data traffic related to an auto switching function (ASF) server from a UE client located on the UE using a special access point name (APN). The mobile core network component then uses a dedicated deep packet inspection (ASF DPI) for all data transfers to the special APN. The core network component is then able to process the UE data traffic seamlessly as the traffic is toggled between the ASF tunnel the WiFi tunnel. By monitoring the data traffic on the ASF tunnel, the core component (GGSN/PGW) is able to provide PCC for the data session.

Abstract: A system and method provides seamless switchover of a user device (UE) between a mobile data network and a wireless network while providing policy and charging control (PCC) of the data session in the mobile data network. A mobile core network component is made ASF aware to process user data traffic related to an auto switching function (ASF) server from a UE client located on the UE using a special access point name (APN). The mobile core network component then uses a dedicated deep packet inspection (ASF DPI) for all data transfers to the special APN. The core network component is then able to process the UE data traffic seamlessly as the traffic is toggled between the ASF tunnel the WiFi tunnel. By monitoring the data traffic on the ASF tunnel, the core component (GGSN/PGW) is able to provide PCC for the data session.

Abstract: A chip-scale, air-clad semiconductor pedestal waveguide can be used as a mid-infrared (mid-IR) sensor capable of in situ monitoring of organic solvents and other analytes. The sensor uses evanescent coupling from a silicon or germanium waveguide, which is highly transparent in the mid-IR portion of the electromagnetic spectrum, to probe the absorption spectrum of fluid surrounding the waveguide. Launching a mid-IR beam into the waveguide exposed to a particular analyte causes attenuation of the evanescent wave's spectral components due to absorption by carbon, oxygen, hydrogen, and/or nitrogen bonds in the surrounding fluid. Detecting these changes at the waveguide's output provides an indication of the type and concentration of one or more compounds in the surrounding fluid. If desired, the sensor may be integrated onto a silicon substrate with a mid-IR light source and a mid-IR detector to form a chip-based spectrometer.