Patents by Inventor Yan-Chih Lu
Yan-Chih Lu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220333006Abstract: A far infrared (FIR)-emitting composition includes a first polymer component and a silicon dioxide composite particle which is prepared by subjecting a tetraalkoxysilane and a compound represented by Formula (A) to hydrolysis and condensation polymerization: Y—Si(ORa)3??(A), wherein each Ra independently represents a C1-4 alkyl group or a C1-4 alkanoyl group, Y represents X—R1—, a non-substituted C1-18 linear alkyl group or a non-substituted C3-18 branched alkyl group, and X and R1 are defined as set forth in the Specification and Claims. A FIR-emitting fiber including the FIR-emitting composition is also disclosed.Type: ApplicationFiled: October 22, 2021Publication date: October 20, 2022Applicants: National Chi Nan University, The Heart of Taiwan Science, Innovation, Culture and Art Co., Ltd.Inventors: Long-Li LAI, Yan-Chih LU, Han-Hsuan KUO, Cheng-Hua LEE
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Publication number: 20220246654Abstract: A photosensing pixel includes a substrate, a photosensing region, a floating diffusion region, a transfer gate and a control electrode. The photosensing region is located within the substrate. The floating diffusion region is located within the substrate aside the photosensing region. The transfer gate is disposed on the substrate and extending into the photosensing region. The control electrode is located on the substrate and extending into the floating diffusion region.Type: ApplicationFiled: April 19, 2022Publication date: August 4, 2022Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Sin-Yao Huang, Feng-Chi Hung, Chen-Hsien Lin, Tzu-Hsuan Hsu, Yan-Chih Lu
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Patent number: 11335716Abstract: A photosensing pixel includes a substrate, a photosensing region, a floating diffusion region, a transfer gate and a control electrode. The photosensing region is located within the substrate. The floating diffusion region is located within the substrate aside the photosensing region. The transfer gate is disposed on the substrate and extending into the photosensing region. The control electrode is located on the substrate and extending into the floating diffusion region.Type: GrantFiled: March 2, 2020Date of Patent: May 17, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Sin-Yao Huang, Feng-Chi Hung, Chen-Hsien Lin, Tzu-Hsuan Hsu, Yan-Chih Lu
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Patent number: 11299504Abstract: A process for preparing a triazine-based precursor for producing a micro-particulate complex containing a far infrared-emissive silica particle comprises steps of: a) subjecting 2-4-6-trichloro-1,3,5-triazine and a first nucleophilic compound to a displacement reaction in the presence of a first solvent at a first temperature range to form an intermediate; and b) subjecting the intermediate and a second nucleophilic compound to a further displacement reaction in the presence of a second solvent at a second temperature range higher than the first temperature range.Type: GrantFiled: August 10, 2020Date of Patent: April 12, 2022Assignees: NATIONAL CHI NAN UNIVERSITY, GREAT CHAIN CHEMICAL LTDInventors: Long-Li Lai, Cheng-Hua Lee, Jhih-Yuan Tong, Yan-Chih Lu, Yu-You Lin, Ya-Lin Chang
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Patent number: 11088192Abstract: In some embodiments, the present disclosure relates to a method of forming an integrated chip (IC) structure. The method may be performed by forming a first integrated chip die having one or more semiconductor devices within a first substrate, and forming a passivation layer over the first integrated chip die. The passivation layer is selectively etched to form interior sidewalls defining a first opening, and a conductive material is deposited over the passivation layer and within the first opening. The conductive material is patterned to define a conductive blocking structure that laterally extends past the one or more semiconductor devices in opposing directions. The first integrated chip die is bonded to a second integrated chip die having an array of image sensing elements within a second substrate.Type: GrantFiled: August 6, 2018Date of Patent: August 10, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Cheng-Ying Ho, Ching-Chun Wang, Dun-Nian Yaung, Feng-Chi Hung, Yan-Chih Lu
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Publication number: 20210193712Abstract: A photosensing pixel includes a substrate, a photosensing region, a floating diffusion region, a transfer gate and a control electrode. The photosensing region is located within the substrate. The floating diffusion region is located within the substrate aside the photosensing region. The transfer gate is disposed on the substrate and extending into the photosensing region. The control electrode is located on the substrate and extending into the floating diffusion region.Type: ApplicationFiled: March 2, 2020Publication date: June 24, 2021Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Sin-Yao Huang, Feng-Chi Hung, Chen-Hsien Lin, Tzu-Hsuan Hsu, Yan-Chih Lu
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Publication number: 20200369687Abstract: A process for preparing a triazine-based precursor for producing a micro-particulate complex containing a far infrared-emissive silica particle comprises steps of: a) subjecting 2-4-6-trichloro-1,3,5-triazine and a first nucleophilic compound to a displacement reaction in the presence of a first solvent at a first temperature range to form an intermediate; and b) subjecting the intermediate and a second nucleophilic compound to a further displacement reaction in the presence of a second solvent at a second temperature range higher than the first temperature range.Type: ApplicationFiled: August 10, 2020Publication date: November 26, 2020Inventors: Long-Li Lai, Cheng-Hua Lee, Jhih-Yuan Tong, Yan-Chih Lu, Yu-You Lin, Ya-Lin Chang
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Patent number: 10490580Abstract: Embodiments of the present disclosure include an image sensor device and methods of forming the same. An embodiment is an image sensor device including a first plurality of pickup regions in a photosensor array area of a substrate, each of first plurality of pickup regions having a first width and a first length, a second plurality of pickup regions in a periphery area of the substrate, the periphery area along at least one side of the photosensor array area, each of second plurality of pickup regions having a second width and a second length.Type: GrantFiled: January 8, 2018Date of Patent: November 26, 2019Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Dun-Nian Yaung, Ching-Chun Wang, Feng-Chi Hung, Jeng-Shyan Lin, Yan-Chih Lu
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Patent number: 10297631Abstract: In some embodiments, the present disclosure relates to an integrated chip (IC) structure having a conductive blocking structure configured prevent radiation produced by a device within a first die from affecting an image sensing element within a second die. The IC structure has a first IC die with one or more semiconductor devices and a second IC die with an array of image sensing elements. A hybrid bonding interface region is arranged between the first and second IC die. A conductive bonding structure is arranged within the hybrid bonding interface region and is configured to electrically couple the first IC die to the second IC die. A conductive blocking structure is arranged within the hybrid bonding interface region and extends laterally between the one or more semiconductor devices and the array of image sensing elements.Type: GrantFiled: July 19, 2016Date of Patent: May 21, 2019Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Cheng-Ying Ho, Ching-Chun Wang, Dun-Nian Yaung, Feng-Chi Hung, Yan-Chih Lu
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Publication number: 20190055270Abstract: A process for preparing a triazine-based precursor for producing a micro-particulate complex containing a far infrared-emissive silica particle comprises steps of: a) subjecting 2-4-6-trichloro-1,3,5-triazine and a first nucleophilic compound to a displacement reaction in the presence of a first solvent at a first temperature range to form an intermediate; and b) subjecting the intermediate and a second nucleophilic compound to a further displacement reaction in the presence of a second solvent at a second temperature range higher than the first temperature range.Type: ApplicationFiled: May 11, 2018Publication date: February 21, 2019Inventors: Long-Li Lai, Cheng-Hua Lee, Jhih-Yuan Tong, Yan-Chih Lu, Yu-You Lin, Ya-Lin Chang
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Publication number: 20180342552Abstract: In some embodiments, the present disclosure relates to a method of forming an integrated chip (IC) structure. The method may be performed by forming a first integrated chip die having one or more semiconductor devices within a first substrate, and forming a passivation layer over the first integrated chip die. The passivation layer is selectively etched to form interior sidewalls defining a first opening, and a conductive material is deposited over the passivation layer and within the first opening. The conductive material is patterned to define a conductive blocking structure that laterally extends past the one or more semiconductor devices in opposing directions. The first integrated chip die is bonded to a second integrated chip die having an array of image sensing elements within a second substrate.Type: ApplicationFiled: August 6, 2018Publication date: November 29, 2018Inventors: Cheng-Ying Ho, Ching-Chun Wang, Dun-Nian Yaung, Feng-Chi Hung, Yan-Chih Lu
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Publication number: 20180151613Abstract: Embodiments of the present disclosure include an image sensor device and methods of forming the same. An embodiment is an image sensor device including a first plurality of pickup regions in a photosensor array area of a substrate, each of first plurality of pickup regions having a first width and a first length, a second plurality of pickup regions in a periphery area of the substrate, the periphery area along at least one side of the photosensor array area, each of second plurality of pickup regions having a second width and a second length.Type: ApplicationFiled: January 8, 2018Publication date: May 31, 2018Inventors: Dun-Nian Yaung, Ching-Chun Wang, Feng-Chi Hung, Jeng-Shyan Lin, Yan-Chih Lu
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Patent number: 9865630Abstract: Embodiments of the present disclosure include an image sensor device and methods of forming the same. An embodiment is an image sensor device including a first plurality of pickup regions in a photosensor array area of a substrate, each of first plurality of pickup regions having a first width and a first length, a second plurality of pickup regions in a periphery area of the substrate, the periphery area along at least one side of the photosensor array area, each of second plurality of pickup regions having a second width and a second length.Type: GrantFiled: July 8, 2016Date of Patent: January 9, 2018Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Dun-Nian Yaung, Ching-Chun Wang, Feng-Chi Hung, Jeng-Shyan Lin, Yan-Chih Lu
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Patent number: 9728521Abstract: An integrated circuit (IC) using a copper-alloy based hybrid bond is provided. The IC comprises a pair of semiconductor structures vertically stacked upon one another. The pair of semiconductor structures comprise corresponding dielectric layers and corresponding metal features arranged in the dielectric layers. The metal features comprise a copper alloy having copper and a secondary metal. The IC further comprises a hybrid bond arranged at an interface between the semiconductor structures. The hybrid bond comprises a first bond bonding the dielectric layers together and a second bond bonding the metal features together. The second bond comprises voids arranged between copper grains of the metal features and filled by the secondary metal. A method for bonding a pair of semiconductor structures together using the copper-alloy based hybrid bond is also provided.Type: GrantFiled: July 23, 2015Date of Patent: August 8, 2017Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yu-Cheng Tsai, Chun-Chieh Chuang, Ching-Chun Wang, Dun-Nian Yaung, Feng-Chi Hung, Chih-Hui Huang, Yan-Chih Lu, Ju-Shi Chen
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Publication number: 20170221950Abstract: In some embodiments, the present disclosure relates to an integrated chip (IC) structure having a conductive blocking structure configured prevent radiation produced by a device within a first die from affecting an image sensing element within a second die. The IC structure has a first IC die with one or more semiconductor devices and a second IC die with an array of image sensing elements. A hybrid bonding interface region is arranged between the first and second IC die. A conductive bonding structure is arranged within the hybrid bonding interface region and is configured to electrically couple the first IC die to the second IC die. A conductive blocking structure is arranged within the hybrid bonding interface region and extends laterally between the one or more semiconductor devices and the array of image sensing elements.Type: ApplicationFiled: July 19, 2016Publication date: August 3, 2017Inventors: Cheng-Ying Ho, Ching-Chun Wang, Dun-Nian Yaung, Feng-Chi Hung, Yan-Chih Lu
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Publication number: 20170025381Abstract: An integrated circuit (IC) using a copper-alloy based hybrid bond is provided. The IC comprises a pair of semiconductor structures vertically stacked upon one another. The pair of semiconductor structures comprise corresponding dielectric layers and corresponding metal features arranged in the dielectric layers. The metal features comprise a copper alloy having copper and a secondary metal. The IC further comprises a hybrid bond arranged at an interface between the semiconductor structures. The hybrid bond comprises a first bond bonding the dielectric layers together and a second bond bonding the metal features together. The second bond comprises voids arranged between copper grains of the metal features and filled by the secondary metal. A method for bonding a pair of semiconductor structures together using the copper-alloy based hybrid bond is also provided.Type: ApplicationFiled: July 23, 2015Publication date: January 26, 2017Inventors: Yu-Cheng Tsai, Chun-Chieh Chuang, Ching-Chun Wang, Dun-Nian Yaung, Feng-Chi Hung, Chih-Hui Huang, Yan-Chih Lu, Ju-Shi Chen
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Publication number: 20160322407Abstract: Embodiments of the present disclosure include an image sensor device and methods of forming the same. An embodiment is an image sensor device including a first plurality of pickup regions in a photosensor array area of a substrate, each of first plurality of pickup regions having a first width and a first length, a second plurality of pickup regions in a periphery area of the substrate, the periphery area along at least one side of the photosensor array area, each of second plurality of pickup regions having a second width and a second length.Type: ApplicationFiled: July 8, 2016Publication date: November 3, 2016Inventors: Dun-Nian Yaung, Ching-Chun Wang, Feng-Chi Hung, Jeng-Shyan Lin, Yan-Chih Lu
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Patent number: 9391101Abstract: Embodiments of the present disclosure include an image sensor device and methods of forming the same. An embodiment is an image sensor device including a first plurality of pickup regions in a photosensor array area of a substrate, each of first plurality of pickup regions having a first width and a first length, a second plurality of pickup regions in a periphery area of the substrate, the periphery area along at least one side of the photosensor array area, each of second plurality of pickup regions having a second width and a second length.Type: GrantFiled: January 16, 2014Date of Patent: July 12, 2016Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Dun-Nian Yaung, Ching-Chun Wang, Feng-Chi Hung, Jeng-Shyan Lin, Yan-Chih Lu
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Patent number: 9343687Abstract: The present disclosure describes novel imidazo[1,2-a]pyrimidine-containing organic light-emitting compounds represented by formula (I): wherein R1 and R2 independently represent hydrogen, an alkyl group, or an aryl group which is unsubstituted or substituted with at least one substituent selected from the group consisting of an alkyl group, an alkoxy group, and a halo group with the proviso that at least one of R1 and R2 is the aryl group. The disclosure further relates to methods for preparing these compounds, to electronic devices comprising the same, and to the use of the compounds as OLED material.Type: GrantFiled: June 22, 2015Date of Patent: May 17, 2016Assignee: NATIONAL CHI NAN UNIVERSITYInventors: Long-Li Lai, Pei-An Hsieh, Yan-Chih Lu
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Patent number: 9331032Abstract: A method includes performing a hybrid bonding to bond a first package component to a second package component, so that a bonded pair is formed. In the bonded pair, first metal pads in the first package component are bonded to second metal pads in the second package component, and a first surface dielectric layer at a surface of the first package component is bonded to a second surface dielectric layer at a surface of the second package component. After the hybrid bonding, a thermal compressive annealing is performed on the bonded pair.Type: GrantFiled: March 6, 2013Date of Patent: May 3, 2016Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ping-Yin Liu, Xin-Hua Huang, Chih-Hui Huang, Lan-Lin Chao, Yeur-Luen Tu, Yan-Chih Lu, Jhy-Jyi Sze, Chia-Shiung Tsai