Patents by Inventor Yan-Han Huang

Yan-Han Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR DEVICE FOR ENHANCING QUALITY FACTOR OF INDUCTOR AND METHOD OF FORMING THE SAME
    Publication number: 20240113154
    Abstract: A semiconductor device may include a compound substrate and a 3-dimensional inductor structure. The compound substrate may include a front surface and a back surface. The 3-dimensional inductor structure may include a front conductive stack, a back conductive layer, and at least one through-hole structure. At least one portion of the front conductive stack may include a first conductive layer disposed on the front surface of the compound substrate, and a second conductive layer disposed on the first conductive layer. The second conductive layer has a thickness ranging between 30 micrometers and 400 micrometers. The back conductive layer is disposed on the back surface of the compound substrate. The at least one through-hole structure penetrates through the compound substrate, and electrically connects the front conductive stack to the back conductive layer.
    Type: Application
    Filed: November 20, 2022
    Publication date: April 4, 2024
    Applicant: RichWave Technology Corp.
    Inventors: Chia-Wei Chang, Yan-Han Huang, Chin-Chia Chang