Patents by Inventor Yan-Huei Li

Yan-Huei Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11195905
    Abstract: A metal-oxide-semiconductor (MOS) transistor includes a substrate. The substrate has a plurality of trenches extending along a first direction and located on a top portion of the substrate. A gate structure line is located on the substrate and extends along a second direction intersecting with the first direction and crossing over the trenches. A first doped line is located in the substrate, located at a first side of the gate structure line, and crosses over the trenches. A second doped line is located in the substrate, located at a second side of the gate structure line, and crosses over the trenches.
    Type: Grant
    Filed: March 19, 2019
    Date of Patent: December 7, 2021
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Hsiang-Hua Hsu, Liang-An Huang, Sheng-Chen Chung, Chen-An Kuo, Chiu-Te Lee, Chih-Chung Wang, Kuang-Hsiu Chen, Ke-Feng Lin, Yan-Huei Li, Kai-Ting Hu
  • Publication number: 20200266267
    Abstract: A metal-oxide-semiconductor (MOS) transistor includes a substrate. The substrate has a plurality of trenches extending along a first direction and located on a top portion of the substrate. A gate structure line is located on the substrate and extends along a second direction intersecting with the first direction and crossing over the trenches. A first doped line is located in the substrate, located at a first side of the gate structure line, and crosses over the trenches. A second doped line is located in the substrate, located at a second side of the gate structure line, and crosses over the trenches.
    Type: Application
    Filed: March 19, 2019
    Publication date: August 20, 2020
    Applicant: United Microelectronics Corp.
    Inventors: HSIANG-HUA HSU, Liang-An Huang, Sheng-Chen Chung, Chen-An Kuo, Chiu-Te Lee, Chih-Chung Wang, Kuang-Hsiu Chen, Ke-Feng Lin, Yan-Huei Li, Kai-Ting Hu