Patents by Inventor Yan-Jhi Huang
Yan-Jhi Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20220301927Abstract: A method for manufacturing a semiconductor device includes forming a hard mask layer overlying a device layer of a semiconductor device, a mandrel underlayer over hard mask layer, and a mandrel layer over mandrel underlayer. The mandrel layer has a plurality of mandrel lines extending along a first direction. A plurality of openings are formed in mandrel underlayer extending in a second direction substantially perpendicular to first direction. A spacer layer is formed over mandrel underlayer and layer. Spacer layer fills plurality of openings in underlayer. Portions of spacer layer are removed to expose an upper surface of underlayer and mandrel layer, and mandrel layer is removed. By using remaining portions of spacer layer as a mask, underlayer and hard mask layer are removed, to form a hard mask pattern with first hard mask pattern lines extending along first direction and second hard mask pattern lines extending along second direction.Type: ApplicationFiled: June 6, 2022Publication date: September 22, 2022Inventors: Yan-Jhi HUANG, Yu-Yu CHEN
-
Patent number: 11355388Abstract: A method for manufacturing a semiconductor device includes forming a hard mask layer overlying a device layer of a semiconductor device, a mandrel underlayer over hard mask layer, and a mandrel layer over mandrel underlayer. The mandrel layer has a plurality of mandrel lines extending along a first direction. A plurality of openings are formed in mandrel underlayer extending in a second direction substantially perpendicular to first direction. A spacer layer is formed over mandrel underlayer and layer. Spacer layer fills plurality of openings in underlayer. Portions of spacer layer are removed to expose an upper surface of underlayer and mandrel layer, and mandrel layer is removed. By using remaining portions of spacer layer as a mask, underlayer and hard mask layer are removed, to form a hard mask pattern with first hard mask pattern lines extending along first direction and second hard mask pattern lines extending along second direction.Type: GrantFiled: October 12, 2020Date of Patent: June 7, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yan-Jhi Huang, Yu-Yu Chen
-
Publication number: 20210043501Abstract: A method for manufacturing a semiconductor device includes forming a hard mask layer overlying a device layer of a semiconductor device, a mandrel underlayer over hard mask layer, and a mandrel layer over mandrel underlayer. The mandrel layer has a plurality of mandrel lines extending along a first direction. A plurality of openings are formed in mandrel underlayer extending in a second direction substantially perpendicular to first direction. A spacer layer is formed over mandrel underlayer and layer. Spacer layer fills plurality of openings in underlayer. Portions of spacer layer are removed to expose an upper surface of underlayer and mandrel layer, and mandrel layer is removed. By using remaining portions of spacer layer as a mask, underlayer and hard mask layer are removed, to form a hard mask pattern with first hard mask pattern lines extending along first direction and second hard mask pattern lines extending along second direction.Type: ApplicationFiled: October 12, 2020Publication date: February 11, 2021Inventors: Yan-Jhi HUANG, Yu-Yu CHEN
-
Patent number: 10804142Abstract: A method for manufacturing a semiconductor device includes forming a hard mask layer overlying a device layer of a semiconductor device, a mandrel underlayer over hard mask layer, and a mandrel layer over mandrel underlayer. The mandrel layer has a plurality of mandrel lines extending along a first direction. A plurality of openings are formed in mandrel underlayer extending in a second direction substantially perpendicular to first direction. A spacer layer is formed over mandrel underlayer and layer. Spacer layer fills plurality of openings in underlayer. Portions of spacer layer are removed to expose an upper surface of underlayer and mandrel layer, and mandrel layer is removed. By using remaining portions of spacer layer as a mask, underlayer and hard mask layer are removed, to form a hard mask pattern with first hard mask pattern lines extending along first direction and second hard mask pattern lines extending along second direction.Type: GrantFiled: December 17, 2018Date of Patent: October 13, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yan-Jhi Huang, Yu-Yu Chen
-
Publication number: 20190115251Abstract: A method for manufacturing a semiconductor device includes forming a hard mask layer overlying a device layer of a semiconductor device, a mandrel underlayer over hard mask layer, and a mandrel layer over mandrel underlayer. The mandrel layer has a plurality of mandrel lines extending along a first direction. A plurality of openings are formed in mandrel underlayer extending in a second direction substantially perpendicular to first direction. A spacer layer is formed over mandrel underlayer and layer. Spacer layer fills plurality of openings in underlayer. Portions of spacer layer are removed to expose an upper surface of underlayer and mandrel layer, and mandrel layer is removed. By using remaining portions of spacer layer as a mask, underlayer and hard mask layer are removed, to form a hard mask pattern with first hard mask pattern lines extending along first direction and second hard mask pattern lines extending along second direction.Type: ApplicationFiled: December 17, 2018Publication date: April 18, 2019Inventors: Yan-Jhi HUANG, Yu-Yu Chen
-
Patent number: 10157776Abstract: A method for manufacturing a semiconductor device includes forming a hard mask layer overlying a device layer of a semiconductor device, a mandrel underlayer over hard mask layer, and a mandrel layer over mandrel underlayer. The mandrel layer has a plurality of mandrel lines extending along a first direction. A plurality of openings are formed in mandrel underlayer extending in a second direction substantially perpendicular to first direction. A spacer layer is formed over mandrel underlayer and layer. Spacer layer fills plurality of openings in underlayer. Portions of spacer layer are removed to expose an upper surface of underlayer and mandrel layer, and mandrel layer is removed. By using remaining portions of spacer layer as a mask, underlayer and hard mask layer are removed, to form a hard mask pattern with first hard mask pattern lines extending along first direction and second hard mask pattern lines extending along second direction.Type: GrantFiled: November 1, 2017Date of Patent: December 18, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yan-Jhi Huang, Yu-Yu Chen
-
Publication number: 20180269100Abstract: A method for manufacturing a semiconductor device includes forming a hard mask layer overlying a device layer of a semiconductor device, a mandrel underlayer over hard mask layer, and a mandrel layer over mandrel underlayer. The mandrel layer has a plurality of mandrel lines extending along a first direction. A plurality of openings are formed in mandrel underlayer extending in a second direction substantially perpendicular to first direction. A spacer layer is formed over mandrel underlayer and layer. Spacer layer fills plurality of openings in underlayer. Portions of spacer layer are removed to expose an upper surface of underlayer and mandrel layer, and mandrel layer is removed. By using remaining portions of spacer layer as a mask, underlayer and hard mask layer are removed, to form a hard mask pattern with first hard mask pattern lines extending along first direction and second hard mask pattern lines extending along second direction.Type: ApplicationFiled: November 1, 2017Publication date: September 20, 2018Inventors: Yan-Jhi HUANG, Yu-Yu CHEN
-
Patent number: 10056258Abstract: A method includes forming a mask layer over a target layer. A merge cut feature is formed in the mask layer. A first mandrel layer is formed over the mask layer and the merge cut feature. The first mandrel layer is patterned to form first openings therein. First spacers are formed on sidewalls of the first openings. The first openings are filled with a dielectric material to form plugs. The first mandrel layer is patterned to remove portions of the first mandrel layer interposed between adjacent first spacers. The merge cut feature is patterned using the first spacers and the plugs as a combined mask. The plugs are removed. The mask layer is patterned using the first spacers as a mask. The target layer is patterned, using the mask layer and the merge cut feature as a combined mask, to form second openings therein.Type: GrantFiled: October 3, 2017Date of Patent: August 21, 2018Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yan-Jhi Huang, Yu-Yu Chen
-
Publication number: 20180108527Abstract: A method includes forming a mask layer over a target layer. A merge cut feature is formed in the mask layer. A first mandrel layer is formed over the mask layer and the merge cut feature. The first mandrel layer is patterned to form first openings therein. First spacers are formed on sidewalls of the first openings. The first openings are filled with a dielectric material to form plugs. The first mandrel layer is patterned to remove portions of the first mandrel layer interposed between adjacent first spacers. The merge cut feature is patterned using the first spacers and the plugs as a combined mask. The plugs are removed. The mask layer is patterned using the first spacers as a mask. The target layer is patterned, using the mask layer and the merge cut feature as a combined mask, to form second openings therein.Type: ApplicationFiled: October 3, 2017Publication date: April 19, 2018Inventors: Yan-Jhi Huang, Yu-Yu Chen
-
Patent number: 9818613Abstract: A method includes forming a mask layer over a target layer. A merge cut feature is formed in the mask layer. A first mandrel layer is formed over the mask layer and the merge cut feature. The first mandrel layer is patterned to form first openings therein. First spacers are formed on sidewalls of the first openings. The first openings are filled with a dielectric material to form plugs. The first mandrel layer is patterned to remove portions of the first mandrel layer interposed between adjacent first spacers. The merge cut feature is patterned using the first spacers and the plugs as a combined mask. The plugs are removed. The mask layer is patterned using the first spacers as a mask. The target layer is patterned, using the mask layer and the merge cut feature as a combined mask, to form second openings therein.Type: GrantFiled: October 18, 2016Date of Patent: November 14, 2017Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yan-Jhi Huang, Yu-Yu Chen