Abstract: A memory device includes a substrate; an active area extending along a first direction on the substrate; a gate line traversing the active area and extending along a second direction that is not parallel to the first direction; a source doped region in the active area and on a first side of the gate line; a main source line extending along the first direction; a source line extension coupled to the main source line and extending along the second direction; a drain doped region in the active area and on a second side of the gate line that is opposite to the first side; and a data storage element electrically coupled to the drain doped region. The main source line is electrically connected to the source doped region via the source line extension.

Abstract: A semiconductor device includes a PMOS region and a NMOS region on a substrate, a first fin-shaped structure on the PMOS region, a first single diffusion break (SDB) structure in the first fin-shaped structure, a first gate structure on the first SDB structure, and a second gate structure on the first fin-shaped structure. Preferably, the first gate structure and the second gate structure are of different materials and the first gate structure disposed directly on top of the first SDB structure is a polysilicon gate while the second gate structure disposed on the first fin-shaped structure is a metal gate in the PMOS region.

Abstract: A semiconductor device includes a PMOS region and a NMOS region on a substrate, a first fin-shaped structure on the PMOS region, a first single diffusion break (SDB) structure in the first fin-shaped structure, a first gate structure on the first SDB structure, and a second gate structure on the first fin-shaped structure. Preferably, the first gate structure and the second gate structure are of different materials and the first gate structure disposed directly on top of the first SDB structure is a polysilicon gate while the second gate structure disposed on the first fin-shaped structure is a metal gate in the PMOS region.

Abstract: A memory device includes a substrate; an active area extending along a first direction on the substrate; a gate line traversing the active area and extending along a second direction that is not parallel to the first direction; a source doped region in the active area and on a first side of the gate line; a main source line extending along the first direction; a source line extension coupled to the main source line and extending along the second direction; a drain doped region in the active area and on a second side of the gate line that is opposite to the first side; and a data storage element electrically coupled to the drain doped region. The main source line is electrically connected to the source doped region via the source line extension.

Abstract: A semiconductor device includes a PMOS region and a NMOS region on a substrate, a first fin-shaped structure on the PMOS region, a first single diffusion break (SDB) structure in the first fin-shaped structure, a first gate structure on the first SDB structure, and a second gate structure on the first fin-shaped structure. Preferably, the first gate structure and the second gate structure are of different materials and the first gate structure disposed directly on top of the first SDB structure is a polysilicon gate while the second gate structure disposed on the first fin-shaped structure is a metal gate in the PMOS region.

Abstract: A memory device includes a substrate; an active area extending along a first direction on the substrate; a gate line traversing the active area and extending along a second direction that is not parallel to the first direction; a source doped region in the active area and on a first side of the gate line; a main source line extending along the first direction; a source line extension coupled to the main source line and extending along the second direction; a drain doped region in the active area and on a second side of the gate line that is opposite to the first side; and a data storage element electrically coupled to the drain doped region. The main source line is electrically connected to the source doped region via the source line extension.

Abstract: A semiconductor device includes a PMOS region and a NMOS region on a substrate, a first fin-shaped structure on the PMOS region, a first single diffusion break (SDB) structure in the first fin-shaped structure, a first gate structure on the first SDB structure, and a second gate structure on the first fin-shaped structure. Preferably, the first gate structure and the second gate structure are of different materials and the first gate structure disposed directly on top of the first SDB structure is a polysilicon gate while the second gate structure disposed on the first fin-shaped structure is a metal gate in the PMOS region.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a first fin-shaped structure on a substrate; forming a first single diffusion break (SDB) structure in the first fin-shaped structure; forming a first gate structure on the first SDB structure and a second gate structure on the first fin-shaped structure; forming an interlayer dielectric (ILD) layer around the first gate structure and the second gate structure; forming a patterned mask on the first gate structure; and performing a replacement metal gate (RMG) process to transform the second gate structure into a metal gate.

Abstract: A memory device includes a substrate; an active area extending along a first direction on the substrate; a gate line traversing the active area and extending along a second direction that is not parallel to the first direction; a source doped region in the active area and on a first side of the gate line; a main source line extending along the first direction; a source line extension coupled to the main source line and extending along the second direction; a drain doped region in the active area and on a second side of the gate line that is opposite to the first side; and a data storage element electrically coupled to the drain doped region. The main source line is electrically connected to the source doped region via the source line extension.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a first fin-shaped structure on a substrate; forming a first single diffusion break (SDB) structure in the first fin-shaped structure; forming a first gate structure on the first SDB structure and a second gate structure on the first fin-shaped structure; forming an interlayer dielectric (ILD) layer around the first gate structure and the second gate structure; forming a patterned mask on the first gate structure; and performing a replacement metal gate (RMG) process to transform the second gate structure into a metal gate.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a first fin-shaped structure on a substrate; forming a first single diffusion break (SDB) structure in the first fin-shaped structure; forming a first gate structure on the first SDB structure and a second gate structure on the first fin-shaped structure; forming an interlayer dielectric (ILD) layer around the first gate structure and the second gate structure; forming a patterned mask on the first gate structure; and performing a replacement metal gate (RMG) process to transform the second gate structure into a metal gate.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a first fin-shaped structure on a substrate; forming a first single diffusion break (SDB) structure in the first fin-shaped structure; forming a first gate structure on the first SDB structure and a second gate structure on the first fin-shaped structure; forming an interlayer dielectric (ILD) layer around the first gate structure and the second gate structure; forming a patterned mask on the first gate structure; and performing a replacement metal gate (RMG) process to transform the second gate structure into a metal gate.

Abstract: A gate driving circuit receives a plurality of clock signals in a sequence and includes a plurality of cascaded drive units sequentially outputting an output signal, wherein a first-stage drive unit of the gate driving circuit receives a scan start signal or a scan end signal while a last-stage drive unit thereof receives a scan end signal or a scan start signal; wherein a driving direction of the gate driving circuit is reversed by reversing the sequence of the clock signals and exchanging the scan start signal and the scan end signal. The present invention further provides a driving method of a gate driving circuit.

Abstract: An integrated gate driver circuit receives a plurality of clocks and includes a plurality of driving units cascaded in series. Each driving unit is for driving a load and includes an input terminal, an output terminal, a first switch and a second switch. The first switch has a first terminal coupled to the input terminal, a second terminal coupled to a first node, and a control terminal receiving a first clock, and the first switch is turned on when the first clock is at high level. The second switch has a first terminal receiving a second clock, a second terminal coupled to the output terminal, and a control terminal coupled to the first node, wherein the second clock charges and discharges the load through the second switch when the first node is at high level; wherein the output terminal of each driving unit is coupled to the input terminal of the immediately succeeding driving unit.

Abstract: A gate driving circuit receives a plurality of clock signals in a sequence and includes a plurality of cascaded drive units sequentially outputting an output signal, wherein a first-stage drive unit of the gate driving circuit receives a scan start signal or a scan end signal while a last-stage drive unit thereof receives a scan end signal or a scan start signal; wherein a driving direction of the gate driving circuit is reversed by reversing the sequence of the clock signals and exchanging the scan start signal and the scan end signal. The present invention further provides a driving method of a gate driving circuit.

Abstract: An integrated gate driver circuit includes an output drive circuit and a voltage stabilizing circuit. The voltage stabilizing circuit is configured to stabilize an output voltage outputted by the output drive circuit thereby reducing the ripple of the output voltage.

Abstract: A gate driving circuit receives a plurality of clock signals in a sequence and includes a plurality of cascaded drive units sequentially outputting an output signal, wherein a first-stage drive unit of the gate driving circuit receives a scan start signal or a scan end signal while a last-stage drive unit thereof receives a scan end signal or a scan start signal; wherein a driving direction of the gate driving circuit is reversed by reversing the sequence of the clock signals and exchanging the scan start signal and the scan end signal. The present invention further provides a driving method of a gate driving circuit.

Abstract: A gate line driving circuit comprises a driving chip comprising first and second output ports, a LCD panel comprising first, second and third gate lines, a first switch and a second switch. Two terminals of the first gate line are respectively connected to the first output port and the control terminal of the first switch. Two terminals of the third gate line are respectively connected to the second output port and the control terminal of the second switch. The input terminal of the first switch electrically connects an operating voltage and the output terminal of the first switch electrically connects to the input terminal of the second switch. The output terminal of the second switch electrically connects a ground point, and one terminal of the second gate line is connected to between the output terminal of the first switch and the input terminal of the second switch.

Abstract: An integrated gate driver circuit includes an output drive circuit and a voltage stabilizing circuit. The voltage stabilizing circuit is configured to stabilize an output voltage outputted by the output drive circuit thereby reducing the ripple of the output voltage.

Abstract: A gate driving circuit receives a plurality of clock signals in a sequence and includes a plurality of cascaded drive units sequentially outputting an output signal, wherein a first-stage drive unit of the gate driving circuit receives a scan start signal or a scan end signal while a last-stage drive unit thereof receives a scan end signal or a scan start signal; wherein a driving direction of the gate driving circuit is reversed by reversing the sequence of the clock signals and exchanging the scan start signal and the scan end signal. The present invention further provides a driving method of a gate driving circuit.