Abstract: The present invention provides a method of hydrogenating a solar cell and a device thereof. The device includes a chamber, a moving device, and a light-beam generator. The light-beam generated by the light-beam generator has a power density between 20 W/cm2 and 200 W/cm2 and a width between 1 mm and 156 mm. The light-beam scans a solar cell with a scanning speed between 50 mm/sec and 200 mm/sec to achieve hydrogenating the solar cell. Furthermore, the device includes a heating device used to heat the solar cell.

Abstract: The present disclosure provides a method for recovering the efficacy of solar cell modules and a device thereof. The method includes providing a solar cell module and scanning the solar cell module with a light-beam. The light-beam has a power density between 20 W/cm2 and 200 W/cm2, a width between 1 mm and 156 mm. The light-beam scans a solar cell module with a scanning speed between 50 mm/sec and 200 mm/sec. Furthermore, the present disclosure also provides a portable device for recovering the efficacy of solar cell modules. The portable device includes two types such as placed type and hand-held type. The aforementioned devices can perform a hydrogenating process on solar cell modules to improve the degree of light-induced degradation (LID) so as to improve the photovoltaic conversion efficiency of solar cell modules.

Abstract: The present disclosure provides a method for recovering the efficacy of solar cell modules and a device thereof. The method includes providing a solar cell module and scanning the solar cell module with a light-beam. The light-beam has a power density between 20 W/cm2 and 200 W/cm2, a width between 1 mm and 156 mm. The light-beam scans a solar cell module with a scanning speed between 50 mm/sec and 200 mm/sec. Furthermore, the present disclosure also provides a portable device for recovering the efficacy of solar cell modules. The portable device includes two types such as placed type and hand-held type. The aforementioned devices can perform a hydrogenating process on solar cell modules to improve the degree of light-induced degradation (LID) so as to improve the photovoltaic conversion efficiency of solar cell modules.

Abstract: A method of manufacturing a solar cell includes the following steps. An ion implantation process is performed to a first surface of a substrate to form a first doping layer. Then, the ion implantation process is performed to a second surface of the substrate to form a second doping layer. After that, an annealing process is performed to the structure formed by the substrate, the first doping layer and the second doping layer, and forming a first passivation layer on the first doping layer and a second passivation layer on the second doping layer by the annealing process. A third passivation layer is formed on the first passivation layer formed after the annealing process and a fourth passivation layer is formed on the second passivation layer formed after the annealing process. Afterward, conductive electrodes are formed on the third passivation layer and the fourth passivation layer, respectively.

Abstract: A solar energy cell includes a photoelectric conversion layer, an anti-reflection layer and a plurality of electrical conductive channels. The anti-reflection layer is disposed on the photoelectric conversion layer. The electrical conductive channels are disposed on the anti-reflection layer and electrically connected with the photoelectric conversion layer, wherein the electrical conductive channels include a conductive paste and pigments to enable a color thereof to be substantially the same as a color of the anti-reflection layer.

Abstract: A method of manufacturing a solar cell includes the following steps. An ion implantation process is performed to a first surface of a substrate to form a first doping layer. Then, the ion implantation process is performed to a second surface of the substrate to form a second doping layer. After that, an annealing process is performed to the structure formed by the substrate, the first doping layer and the second doping layer, and forming a first passivation layer on the first doping layer and a second passivation layer on the second doping layer by the annealing process. A third passivation layer is formed on the first passivation layer formed after the annealing process and a fourth passivation layer is formed on the second passivation layer formed after the annealing process. Afterward, conductive electrodes are formed on the third passivation layer and the fourth passivation layer, respectively.