Abstract: The present invention provides a ceramic wafer with a surface shape and a manufacturing method thereof. The ceramic wafer has an upper surface and a lower surface, and at least one of the upper surface and the lower surface has an irregular surface shape. The total thickness variation (TTV) value between the two surfaces ranges from 0.1 to 100 ?m. The ceramic wafer with the surface shape of the present invention, by controlling the total thickness variation of the wafer, not only helps the coating, but also improves the flow of the fluid, and can improve the bonding force of the coating and reduce the surface defects in the subsequent process.

Abstract: A composite substrate and a manufacturing method thereof are provided. By disposing a plurality of interlayers between a carrier plate and a substrate, a strong bonding force between the layers can be ensured, and the difference between the coefficients of thermal expansion of the layers is allowed to be adjusted to prevent such drawbacks as the substrate being likely to break.

Abstract: The present invention provides a silicon carbide composite wafer and a manufacturing method thereof. The silicon carbide composite wafer includes (a) a silicon carbide material and (b) a wafer substrate, and the upper surface of the wafer substrate is bonded to the lower surface of the silicon carbide material, wherein the lower surface of the silicon carbide material and/or the upper surface of the wafer substrate undergo a surface modification, thereby allowing the silicon carbide material to be bonded to the wafer substrate directly and firmly. The technical effects of the present invention include achieving strong bonding between the wafer and the substrate, reducing manufacturing process, increasing yield rate, and achieving high industrial applicability.

Abstract: The present invention provides a ceramic-circuit composite structure, comprising: a ceramic plate with a supporting surface that has a recessed supporting portion; a curved-surface circuit buried in the ceramic plate; and a power supply module electrically connected to the curved-surface circuit. Moreover, the present invention provides a method for making the ceramic-circuit composite structure. The ceramic-circuit composite structure of the present invention makes use of the curved-surface circuit to improve the prior art problem that a planar circuit has less static electricity or lower temperature at the center than in the peripheral region.

Abstract: The present invention provides an aluminum nitride wafer and a method for making the same. The method includes forming at least one alignment notch in or at least one flat alignment edge on a periphery of the aluminum nitride wafer. The alignment notch and the flat alignment edge can prevent the aluminum nitride wafer from being in a poor state during the semiconductor manufacturing process and makes it possible to position the aluminum nitride wafer precisely so that the fraction defective can be lowered. The aluminum nitride wafer of the present invention has advantages of effective insulation, efficient heat dissipation, and a high dielectric constant, and can be used in semiconductor manufacturing processes, electronic products, and semiconductor equipment.

Abstract: The present invention provides an aluminum nitride wafer and a method for making the same. The method includes forming at least one alignment notch in or at least one flat alignment edge on a periphery of the aluminum nitride wafer. The alignment notch and the flat alignment edge can prevent the aluminum nitride wafer from being in a poor state during the semiconductor manufacturing process and makes it possible to position the aluminum nitride wafer precisely so that the fraction defective can be lowered. The aluminum nitride wafer of the present invention has advantages of effective insulation, efficient heat dissipation, and a high dielectric constant, and can be used in semiconductor manufacturing processes, electronic products, and semiconductor equipment.

Abstract: The present invention provides a ceramic-circuit composite structure, comprising: a ceramic plate with a supporting surface that has a recessed supporting portion; a curved-surface circuit buried in the ceramic plate; and a power supply module electrically connected to the curved-surface circuit. Moreover, the present invention provides a method for making the ceramic-circuit composite structure. The ceramic-circuit composite structure of the present invention makes use of the curved-surface circuit to improve the prior art problem that a planar circuit has less static electricity or lower temperature at the center than in the peripheral region.

Abstract: A method of producing ceramic wafer includes a forming step and processing step. The processing step includes forming positioning notch or positioning, flat edge and edge profile, which avoids the ceramic wafers to have processing defect during cutting, grinding, and polishing, for increasing yield. The ceramic particles for producing ceramic wafer include nitride ceramic powder, oxide ceramic powder, and nitride ceramic powder. The ceramic wafer has low dielectric constant, insulation, and excellent heat dissipation, which can be applied for the need of semiconductor process, producing electric product and semiconductor equipment.

Abstract: A method of producing ceramic wafer includes a forming step and processing step. The processing step includes forming positioning notch or positioning, flat edge and edge profile, which avoids the ceramic wafers to have processing defect during cutting, grinding, and polishing, for increasing yield. The ceramic particles for producing ceramic wafer include nitride ceramic powder, oxide ceramic powder, and nitride ceramic powder. The ceramic wafer has low dielectric constant, insulation, and excellent heat dissipation, which can be applied for the need of semiconductor process, producing electric product and semiconductor equipment.