Patents by Inventor Yan-Kuin Su
Yan-Kuin Su has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20120319149Abstract: A light-emitting device structure and a method for manufacturing the same are described. The light-emitting device structure includes a substrate and an illuminant structure. The substrate has a top surface and a lower surface on opposite sides, and two inclined side surfaces on opposite sides. Two sides of each inclined side surface are respectively connected to the top surface and the lower surface. The illuminant structure is disposed on the top surface.Type: ApplicationFiled: September 13, 2011Publication date: December 20, 2012Applicant: NATIONAL CHENG KUNG UNIVERSITYInventors: Yan-Kuin Su, Kuan-Chun Chen, Chun-Liang Lin
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Patent number: 8232119Abstract: A method for manufacturing a heat dissipation bulk of a semiconductor device including the following steps is described. An electrically conductive layer is formed to cover a surface of a temporary substrate. At least one semiconductor chip is connected to the electrically conductive layer by at least one metal bump, wherein the at least one metal bump is located between the at least one semiconductor chip and the electrically conductive layer. A metal substrate is formed on the electrically conductive layer, wherein the metal substrate fills up a gap between the at least one semiconductor chip and the electrically conductive layer. The temporary substrate is removed.Type: GrantFiled: February 22, 2011Date of Patent: July 31, 2012Assignee: National Cheng Kung UniversityInventors: Yan-Kuin Su, Kuan-Chun Chen, Chun-Liang Lin
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Publication number: 20120149138Abstract: A method for manufacturing a heat dissipation bulk of a semiconductor device including the following steps is described. An electrically conductive layer is formed to cover a surface of a temporary substrate. At least one semiconductor chip is connected to the electrically conductive layer by at least one metal bump, wherein the at least one metal bump is located between the at least one semiconductor chip and the electrically conductive layer. A metal substrate is formed on the electrically conductive layer, wherein the metal substrate fills up a gap between the at least one semiconductor chip and the electrically conductive layer. The temporary substrate is removed.Type: ApplicationFiled: February 22, 2011Publication date: June 14, 2012Applicant: NATIONAL CHENG KUNG UNIVERSITYInventors: Yan-Kuin Su, Kuan-Chun Chen, Chun-Liang Lin
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Publication number: 20120086020Abstract: This invention relates to an integrated photodetecting device. The integrated photodetecting device includes a substrate, a light source layer and a photodetector layer. The photodetector layer and light source layer are epitaxied in a stacked structure. The whole device in this invention is fabricated by epitaxy method during a single process. Therefore, the production cost can be reduced by the omission of alignment process. Besides, the integrated photodetecting device of the invention integrates the light source and photodetector into one chip, hence has the ability of minimization, resulting in the reduction of consumption of samples and test time. The distance between the photodetector layer and targets to be tested can also be largely reduced, making the accuracy and sensitivity largely improved, and the kinds of detectable targets largely increased. Furthermore, the integrated photodetecting device of the invention is a portable device so as to increase the possibility of preventive medicine.Type: ApplicationFiled: April 6, 2011Publication date: April 12, 2012Applicant: National Cheng Kung UniversityInventors: Yan-Kuin Su, Shyh-Jer Huang, Chen-Fu Lin
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Patent number: 7723829Abstract: An embedded metal heat sink for a semiconductor device is described. The embedded metal heat sink for a semiconductor device comprises a metal thin layer, a metal heat sink and two bonding pads. The metal thin layer including a first surface and a second surface on opposite sides, wherein at least one semiconductor device is embedded in the first surface of the metal thin layer, and the semiconductor device has two electrodes with different conductivity types. The metal heat sink is deposited on the second surface of the metal thin layer. The bonding pads are deposed on the first surface of the metal thin layer around the semiconductor device and are respectively corresponding to the electrodes, wherein the electrodes are electrically and respectively connected to the corresponding bonding pads by at least two wires, and the bonding pads are electrically connected to an outer circuit.Type: GrantFiled: June 10, 2008Date of Patent: May 25, 2010Assignee: National Cheng Kung UniversityInventors: Yan-Kuin Su, Kuan-Chun Chen, Chun-Liang Lin, Jin-Quan Huang, Shu-Kai Hu
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Patent number: 7452755Abstract: An embedded metal heat sink for a semiconductor device and a method for manufacturing the same are described. The embedded metal heat sink for a semiconductor device comprises a metal thin layer, a metal heat sink and two bonding pads. The metal thin layer including a first surface and a second surface on opposite sides, wherein at least one semiconductor device is embedded in the first surface of the metal thin layer, and the semiconductor device has two electrodes with different conductivity types. The metal heat sink is deposited on the second surface of the metal thin layer. The bonding pads are deposed on the first surface of the metal thin layer around the semiconductor device and are respectively corresponding to the electrodes, wherein the electrodes are electrically and respectively connected to the corresponding bonding pads by at least two wires, and the bonding pads are electrically connected to an outer circuit.Type: GrantFiled: September 6, 2006Date of Patent: November 18, 2008Assignee: National Cheng Kung UniversityInventors: Yan-Kuin Su, Kuan-Chun Chen, Chun-Liang Lin, Jin-Quan Huang, Shu-Kai Hu
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Publication number: 20080246143Abstract: An embedded metal heat sink for a semiconductor device is described. The embedded metal heat sink for a semiconductor device comprises a metal thin layer, a metal heat sink and two bonding pads. The metal thin layer including a first surface and a second surface on opposite sides, wherein at least one semiconductor device is embedded in the first surface of the metal thin layer, and the semiconductor device has two electrodes with different conductivity types. The metal heat sink is deposited on the second surface of the metal thin layer. The bonding pads are deposed on the first surface of the metal thin layer around the semiconductor device and are respectively corresponding to the electrodes, wherein the electrodes are electrically and respectively connected to the corresponding bonding pads by at least two wires, and the bonding pads are electrically connected to an outer circuit.Type: ApplicationFiled: June 10, 2008Publication date: October 9, 2008Applicant: NATIONAL CHEN KUNG UNIVERSITYInventors: Yan-Kuin Su, Kuan-Chun Chen, Chun-Liang Lin, Jin-Quan Huang, Shu-Kai Hu
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Patent number: 7387915Abstract: A method for manufacturing a heat sink of a semiconductor device is described. In the method, an adhesive tape is provided, wherein the adhesive tape includes a first surface and a second surface on opposite sides, and the first surface of the adhesive tape adheres to a surface of a temporary substrate. At least one semiconductor device is provided, wherein the semiconductor device includes a first side and a second side opposite to the first side, and the first side of the one semiconductor device is pressed and set into a portion of the second surface of the adhesive tape, and the second side of the one semiconductor device is exposed. A thin metal layer is formed on the second side of the semiconductor device and the exposed portion of the second surface of the adhesive tape. A metal heat sink is formed on the thin metal layer. Then, the adhesive tape and the temporary substrate are removed.Type: GrantFiled: September 6, 2006Date of Patent: June 17, 2008Assignee: National Cheng Kung UniversityInventors: Yan-Kuin Su, Kuan-Chun Chen, Chun-Liang Lin, Jin-Quan Huang, Shu-Kai Hu
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Publication number: 20070298543Abstract: A method for manufacturing a heat sink of a semiconductor device is described. In the method, an adhesive tape is provided, wherein the adhesive tape includes a first surface and a second surface on opposite sides, and the first surface of the adhesive tape adheres to a surface of a temporary substrate. At least one semiconductor device is provided, wherein the semiconductor device includes a first side and a second side opposite to the first side, and the first side of the one semiconductor device is pressed and set into a portion of the second surface of the adhesive tape, and the second side of the one semiconductor device is exposed. A thin metal layer is formed on the second side of the semiconductor device and the exposed portion of the second surface of the adhesive tape. A metal heat sink is formed on the thin metal layer. Then, the adhesive tape and the temporary substrate are removed.Type: ApplicationFiled: September 6, 2006Publication date: December 27, 2007Applicant: NATIONAL CHENG KUNG UNIVERSITYInventors: Yan-Kuin SU, Kuan-Chun CHEN, Chun-Liang LIN, Jin-Quan HUANG, Shu-Kai HU
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Publication number: 20070296074Abstract: An embedded metal heat sink for a semiconductor device and a method for manufacturing the same are described. The embedded metal heat sink for a semiconductor device comprises a metal thin layer, a metal heat sink and two bonding pads. The metal thin layer including a first surface and a second surface on opposite sides, wherein at least one semiconductor device is embedded in the first surface of the metal thin layer, and the semiconductor device has two electrodes with different conductivity types. The metal heat sink is deposited on the second surface of the metal thin layer. The bonding pads are deposed on the first surface of the metal thin layer around the semiconductor device and are respectively corresponding to the electrodes, wherein the electrodes are electrically and respectively connected to the corresponding bonding pads by at least two wires, and the bonding pads are electrically connected to an outer circuit.Type: ApplicationFiled: September 6, 2006Publication date: December 27, 2007Applicant: NATIONAL CHENG KUNG UNIVERSITYInventors: Yan-Kuin Su, Kuan-Chun Chen, Chun-Liang Lin, Jin-Quan Huang, Shu-Kai Hu
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Patent number: 6781147Abstract: A lateral current blocking light emitting diode (LED) and a method of making the same are disclosed. The present invention features in that a trench is formed between the two electrodes via the technique of such as etching, wherein the depth of the trench reaches to at least the active layer, thereby blocking the lateral current between the two electrodes. With the use of the present invention, the possibility of the current passing through the active layer can be increased, thereby improving the brightness of the LED; and the chance of the photons emitted from the lateral of the trench can be raised wherein the photons are generated from the active layer, thereby increasing the output efficiency of the photons generated from the active layer.Type: GrantFiled: January 10, 2003Date of Patent: August 24, 2004Assignee: Epitech Corporation, Ltd.Inventors: Shi-Ming Chen, Chun-Liang Lin, Wen-Bin Chen, Yan-Kuin Su
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Publication number: 20040089861Abstract: A lateral current blocking light emitting diode (LED) and a method of making the same are disclosed. The present invention features in that a trench is formed between the two electrodes via the technique of such as etching, wherein the depth of the trench reaches to at least the active layer, thereby blocking the lateral current between the two electrodes. With the use of the present invention, the possibility of the current passing through the active layer can be increased, thereby improving the brightness of the LED; and the chance of the photons emitted from the lateral of the trench can be raised wherein the photons are generated from the active layer, thereby increasing the output efficiency of the photons generated from the active layer.Type: ApplicationFiled: January 10, 2003Publication date: May 13, 2004Inventors: Shi-Ming Chen, Chun-Liang Lin, Wen-Bin Chen, Yan-Kuin Su
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Patent number: 6469319Abstract: An ohmic contact to II-VI compound semiconductor device for lowering the contact resistance and increasing the efficiency and reliability of a photoelectric device. The method of manufacturing the ohmic contact to a II-VI compound semiconductor device comprises the steps of forming a II-VI compound semiconductor layer on the substrate, forming a mask layer with a contact via on the II-VI compound semiconductor layer, forming a metal-contact layer on the mask layer and II-VI compound semiconductor layer, and removing the metal-contact layer over the mask layer, wherein the remainder of the metal-contact layer forms the ohmic contact. In order to prevent oxidization of the metal-contact layer, a shield layer comprised of a noble metal can be disposed on the metal-contact layer.Type: GrantFiled: March 21, 2000Date of Patent: October 22, 2002Assignee: National Science CouncilInventors: Yan-Kuin Su, Shoou-Jinn Chang, Wen-Rui Chen
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Patent number: 6037604Abstract: A InGaSb/GaSb strained-layer superlattices infrared photodetector in which the light-hole and heavy-hole are dispersed by the stress of the lattice mismatch, making the confined energy of the light hole and that of the heavy hole different. The wave function coupling of 1C-1HH is larger at near zero bias, thus the 1C-1HH is dominant. The wave function coupling of 1C-1LH is increased as reverse bias increases. When the reverse bias is high enough, the 1C-1HH transition becomes dominant. Because the transition energy of 1C-1HH and that of 1C-1LH are different, the modes of photodetector can be modulated by applying voltage.Type: GrantFiled: August 30, 1994Date of Patent: March 14, 2000Assignee: National Science CouncilInventors: Yan-Kuin Su, Shi-Ming Chen
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Patent number: 6005259Abstract: The invention concerns an InAs/GaSb superlattice infrared detector that is prepared on a GaSb or a GaAs substrate by low pressure organometaleic chemical vapor deposition. The thickness of well and barrier modulated in the superlattice is used to control the wavelength of absorption. As the superlattice is sandwiched by the Si-doped InAs layer, the wavelength of absorption is in the 8.about.14 .mu.m range. As the superlattice is sandwiched by the Zn-doped GaSb layer, the wavelength of absorption is in the 3.about.5 .mu.m range.Type: GrantFiled: September 23, 1997Date of Patent: December 21, 1999Assignee: National Science CouncilInventors: Yan-Kuin Su, Shoou-Jinn Chang, Shi-Ming Chen, Chuing-Liang Lin
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Patent number: 5923689Abstract: This invention is a new type of GaInP/AlGaInP for a visible separate-confinement-heterostructure strained quantum well(SCH-S-QW) laser with passive wave guides in the cladding layers. By using this structure, we can significantly improve the transverse beam divergence with only a slight increase of the threshold current. With proper choice of parameters, the transverse beam divergence as narrow as 18.degree.. FWHM can be achieved while the threshold current only becomes 1.12 factor than the lasers without the passive waveguide structure. This type of structure has three advantages:(1) It increases the spectrum dissolution rate between the laser and its optic element to increase the efficiency in actual operation.(2) Smaller oval ratio makes the light beams appears circular, and avoids the problem of non-paralleled focusing in optical instruments. It also eliminates cumbersome non-paralleled focusing in traditional GaInP/AlGaInP, and is more cost efficient.Type: GrantFiled: January 22, 1998Date of Patent: July 13, 1999Assignee: National Science CouncilInventors: Yan-Kuin Su, Wen-Liang Li, Shoou-Jinn Chang, Chin-Yao Tsai
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Patent number: 5911839Abstract: The present invention is related to a high efficiency indium gallium phosphide NIP solar cell, wherein an intrinsic layer between a emitter layer and base layer can suppress the Zn memory effect and interdiffusion and also a higher doping concentration in n-type AlInP window layer can be attained and the lifetime of minority carriers also increase for improving the conversion efficiency, thus the present invention may be used in the superhigh efficiency tandom cell so as to be used in the space or in earth as an regenerated energy.Type: GrantFiled: December 16, 1996Date of Patent: June 15, 1999Assignee: National Science Council of Republic of ChinaInventors: Chin Yao Tsai, Yan-Kuin Su, Shoou Jinn Chang
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Patent number: 5535146Abstract: In a method for producing a semiconductor device using a logic simulation approach, a circuit model for a user-specified design of a multi-peak resonant tunneling diode-based electronic circuit is provided and includes a plurality of circuit devices. One of the circuit devices is a multi-peak resonant tunneling diode which is modeled by a parasitic resistance in series with parallel combination of a voltage-controlled current source and an intrinsic capacitance. The voltage-controlled current source has an equivalent circuit model with a function stage for realizing current-voltage characteristic curve of the resonant tunneling diode. The function stage includes parallel combination of at least one first circuit branch, at least one second circuit branch and a third circuit branch. Each of the first and second circuit branches has a resistor, a diode and a voltage source. The third circuit branch has a resistor and a voltage source.Type: GrantFiled: April 27, 1995Date of Patent: July 9, 1996Assignee: National Science Council of R.O.C.Inventors: Chih-Yuan Huang, Yan-Kuin Su, James E. Morris