Abstract: A MEMS microphone chip trimming method, apparatus, manufacturing method and microphone are disclosed herein. The method for trimming MEMS microphone chips comprises: detecting a pull-in voltage distribution of MEMS microphone chips on a wafer; providing a mask based on the pull-in voltage distribution; and trimming the MEMS microphone chips on the wafer by using the mask.

Abstract: Methods of fabricating semiconductor sensor devices include steps of fabricating a hermetically sealed MEMS cavity enclosing a MEMS sensor, while forming conductive vias through the device. The devices include a first semi-conductor layer defining at least one conductive via lined with an insulator and having a lower insulating surface; a central dielectric layer above the first semiconductor layer; a second semiconductor layer in contact with the at least one conductive via, and which defines a MEMS cavity; a third semiconductor layer disposed above the second semiconductor layer, and which includes a sensor element aligned with the MEMS cavity; a cap bonded to the third semiconductor to enclose and hermetically seal the MEMS cavity; wherein the third semiconductor layer separates the cap and the second semiconductor layer.

Abstract: Methods of fabricating semiconductor sensor devices include steps of fabricating a hermetically sealed MEMS cavity enclosing a MEMS sensor, while forming conductive vias through the device. The devices include a first semi-conductor layer defining at least one conductive via lined with an insulator and having a lower insulating surface; a central dielectric layer above the first semiconductor layer; a second semiconductor layer in contact with the at least one conductive via, and which defines a MEMS cavity; a third semiconductor layer disposed above the second semiconductor layer, and which includes a sensor element aligned with the MEMS cavity; a cap bonded to the third semiconductor to enclose and hermetically seal the MEMS cavity; wherein the third semiconductor layer separates the cap and the second semiconductor layer.

Abstract: Methods of fabricating semiconductor sensor devices include steps of fabricating a hermetically sealed MEMS cavity enclosing a MEMS sensor, while forming conductive vias through the device. The devices include a first semi-conductor layer defining at least one conductive via lined with an insulator and having a lower insulating surface; a central dielectric layer above the first semiconductor layer; a second semiconductor layer in contact with the at least one conductive via, and which defines a MEMS cavity; a third semiconductor layer disposed above the second semiconductor layer, and which includes a sensor element aligned with the MEMS cavity; a cap bonded to the third semiconductor to enclose and hermetically seal the MEMS cavity; wherein the third semiconductor layer separates the cap and the second semiconductor layer.

Abstract: A pressure sensor fabricated onto a substrate using conventional CMOS fabrication processes. The pressure sensor is built on a substrate having a first conductivity type and has defined in it a well of an opposite conductivity type. This well defines a membrane. Resistors are diffused into the well. Source/drain regions are provided for leadouts for the resistors. An n-cap is provided for the resistors. Metalization contacts may be provided to connect the membrane to a positive bias during a membrane etching process. A cavity is provided on the underside of the substrate through which pressure is applied to the membrane. Signal conditioning circuitry, such as an operational amplifier, may also be fabricated on the same substrate preferably using the same IC processes.

Abstract: An apparatus for sensing an applied force comprising a deflectable bridge, formed in a substrate and spanning a recessed area. The deflectable bridge also has a sensing element. The force is applied to the bridge and in response thereto, an output characteristic of the sensing element changes in proportion to the magnitude of the applied force. The apparatus can further comprise a sensing bump in contact with the bridge, wherein the force is applied to the bridge through the sensing bump.