Abstract: Aspects of the disclosure provide techniques for defining communication parameters.

Abstract: The present disclosure provides a metal oxide thin film transistor, a semiconductor device and a display device, belongs to the field of display technology, and can solve a problem that current metal oxide thin film transistors have a poor stability. The metal oxide thin film transistor of the present disclosure includes a substrate and a first metal oxide semiconductor layer on the substrate; a material of the first metal oxide semiconductor layer includes a metal oxide doped with a first metal element, an electronegativity difference value between the first metal element and an oxygen element is greater than or equal to an electronegativity difference value between a metal element in the metal oxide and the oxygen element.

Abstract: A display panel includes a backplane having a first main surface and a second main surface, and at least one selected side surface located therebetween, a plurality of light-emitting devices and a plurality of first connection portions disposed on the first main surface, a circuit board located on a side of the second main surface away from the first main surface, and a plurality of connection lines. Multiple first connection portions are arranged side by side in an extending direction of a selected side surface and proximate to the selected side surface. Multiple connection lines are arranged at intervals in the extending direction of the selected side surface. The plurality of connection lines are connected between the plurality of first connection portions and the circuit board, and the plurality of connection lines are attached to the at least one selected side surface.

Abstract: There is provided a metal oxide thin film transistor, including: a substrate and a metal oxide semiconductor layer on the substrate; a gate and a gate insulating layer between the substrate and the metal oxide semiconductor layer; the gate insulating layer includes a first silicon nitride layer, a second silicon nitride layer and a first silicon oxide layer which are stacked; the first silicon oxide layer is in contact with the metal oxide semiconductor layer, and two surfaces of the second silicon nitride layer are in contact with the first silicon nitride layer and the first silicon oxide layer, respectively; a content of hydrogen atoms of at least a partial region of the second silicon nitride layer is less than 30% of a content of hydrogen atoms of at least a partial region of the first silicon nitride layer. An array substrate and a display device are further provided.

Abstract: The present disclosure provides a TFT, a manufacturing method and a display substrate, and it relates to the field of TFT technology. The TFT includes: a base substrate; a gate electrode arranged on the base substrate; an active layer arranged at a side of the gate electrode away from the base substrate, an orthogonal projection of the active layer onto the base substrate overlapping with an orthogonal projection of the gate electrode onto the base substrate; and a source electrode and a drain electrode arranged at a side of the active layer away from the base substrate and coupled to the active layer. A resistance between the gate electrode and the drain electrode is greater than a resistance between the gate electrode and the source electrode. According to the present disclosure, it is able to increase a withstand voltage range of the TFT.

Abstract: The present application relates to the technical field of servers, and in particular relates to a PCIE device management architecture, method and system, and a device and a medium. The method includes: acquiring a driver program of a first PCIE switch chip, installing the driver program of the first PCIE switch chip to a baseboard management controller, and establishing a PCIE specification and protocol for communication between a baseboard management controller chip and the first PCIE switch chip; configuring a first PCIE controller in the baseboard management controller to be in an RC mode, and configuring a second PCIE controller of a central processing unit to be in an EP mode; and managing a PCIE device by means of the baseboard management controller configured in the RC mode, thereby improving management efficiency of the baseboard management controller over the PCIE device.

Abstract: A functional backplane includes a wiring board, an intermetallic compound layer and a conductive connection layer. The wiring board includes a substrate, conductive pads and a plurality of protective layer groups. The conductive pads are disposed on the substrate and configured to transmit a driving signal. The plurality of protective layer groups are stacked on a side of the conductive pads away from the substrate. A protective layer group in the plurality of protective layer groups includes an oxidation protective layer, where a material of the oxidation protective layer includes a nickel-based alloy. In a direction perpendicular to the substrate and directed from the substrate to the protective layer group, the oxidation protective layer, the intermetallic compound layer and the conductive connection layer are stacked in sequence.

Abstract: A display panel is disclosed and includes a driving backplane, a plurality of light-emitting devices and an encapsulation structure. The plurality of light-emitting devices are located on a first side of the driving backplane and are disposed at intervals. A light-emitting device includes a device main body and device pins. The device main body includes a light-emitting portion, and the device pins are electrically connected to the driving backplane. The encapsulation structure is located on the first side of the driving backplane and includes a light-shielding pattern and a plurality of encapsulation portions. The light-shielding pattern has a plurality of accommodation regions, an accommodation region exposes at least one light-emitting device. At least part of an encapsulation portion is located in the accommodation region and covers the light-emitting device. A light-emitting portion of at least one light-emitting device is located in the accommodation region.

Abstract: Provided is a method for mounting a multi-media card and an apparatus, a storage medium, an electronic device, and a computer program product, wherein the method includes: determining a target device on which an Embedded Multi-Media Card (EMMC) needs to be mounted; in a case where it is determined that the target device is a Baseboard Management Controller (BMC), mounting the EMMC onto the BMC; and in a case where it is determined that the target device is a first host, mounting the EMMC onto a target Universal Serial Bus (USB) interface connected to the first host.

Abstract: Provided are a thin-film transistor and a manufacturing method thereof, and a display substrate, belonging to the technical field of thin-film transistors. The thin-film transistor includes: a base substrate; a gate electrode on the base substrate; an active layer on a side of the gate electrode away from the base substrate, an orthographic projection of the active layer onto the base substrate overlapping with an orthographic projection of the gate electrode onto the base substrate; and a first electrode and a second electrode on a side of the active layer away from the base substrate, the first electrode being one of a source electrode and a drain electrode, and the second electrode being the other of the source electrode and the drain electrode.

Abstract: A light-emitting substrate and a backlight module are provided, the light-emitting substrate includes a base substrate; a metal wiring layer; a first planarization layer; an electrode layer; the electrode layer including a metal sub-layer and a conductive sub-layer stacked; material of the metal sub-layer include metal or metal alloy; the conductive sub-layer covers the metal sub-layer; a second planarization layer at a side of the electrode layer a functional device layer at a side of the second planarization layer and including a plurality of functional devices electrically connected to the electrode layer; the electrode layer includes a first buffer metal layer between the metal sub-layer and the conductive sub-layer; material of the first buffer metal layer is any one of or a mixture of more than one of molybdenum, molybdenum-niobium alloy, molybdenum-tungsten alloy, molybdenum-nickel-titanium alloy and molybdenum-magnesium-aluminum alloy.

Abstract: A wiring board includes a substrate, conductive pads and at least one protective layer group. The conductive pads are disposed on the substrate. The at least one protective layer group is disposed on a side of the conductive pads away from the substrate; a protective layer group includes an oxidation protective layer and a palladium alloy layer that are stacked, and the oxidation protective layer is closer to the substrate than the palladium alloy layer. A material of the oxidation protective layer includes a nickel-based alloy.

Abstract: Provided is a display panel. The display panel includes: a base substrate; a plurality of sub-pixels, disposed on a side of the base substrate; a color film layer, disposed on a side, distal from the base substrate, of the plurality of sub-pixels and including a plurality of color resist sections in one-to-one correspondence to the plurality of sub-pixels; and a plurality of micro-lens structures in one-to-one correspondence to the plurality of sub-pixels, wherein the plurality of micro-lens structures are disposed on a side, distal from the base substrate, of the color film layer, and each of the micro-lens structures is configured to transmit light emitted by a sub-pixel corresponding to the micro-lens structure.

Abstract: An array substrate and a display apparatus are provided and belong to the field of display technology. The array substrate includes: a substrate, a first signal line and a second signal line on one side of the substrate, the first signal line and the second signal line intersect with each other to define a pixel region, and the array substrate further includes: a first thin film transistor above the substrate and in the pixel region; the first thin film transistor includes: a first semiconductor layer, and the first semiconductor layer includes: a first connection portion, a second connection portion and a third connection portion sequentially connected together; an orthographic projection of the first connection portion on the substrate overlaps with an orthographic projection of the second signal line on the substrate.

Abstract: A tunneling field effect transistor includes a gate electrode, a tunneling field active layer, a first electrode, and a second electrode disposed on a base substrate; the tunneling field active layer includes a first-type active layer and a second-type active layer that are stacked, wherein the first-type active layer includes a first-type channel region and a first source-drain region, the second-type active layer includes a second-type channel region and a second source-drain region, an orthographic projection of the first-type channel region on the base substrate is completely overlapped with an orthographic projection of the second-type channel region on the base substrate, the first source-drain region is located at a side of the tunneling field active layer and is connected with the first electrode.

Abstract: The present disclosure provides a metal oxide thin film transistor, an array substrate and a display device. A metal oxide thin film transistor in the present disclosure includes: a substrate, a first metal oxide semiconductor layer on the substrate, and a second metal oxide semiconductor layer on a side of the first metal oxide semiconductor layer away from the substrate; a carrier mobility of the first metal oxide semiconductor layer is higher than that of the second metal oxide semiconductor layer; a material of the first metal oxide semiconductor layer includes: a first metal oxide doped with a rear earth element; a difference between an electronegativity of the rare earth element and an electronegativity of oxygen element is greater than or equal to a difference between an electronegativity of a metal element in the first metal oxide and the electronegativity of oxygen element.

Abstract: The present application relates to the technical field of servers, and in particular relates to a PCIE device management architecture, method and system, and a device and a medium. The method includes: acquiring a driver program of a first PCIE switch chip, installing the driver program of the first PCIE switch chip to a baseboard management controller, and establishing a PCIE specification and protocol for communication between a baseboard management controller chip and the first PCIE switch chip; configuring a first PCIE controller in the baseboard management controller to be in an RC mode, and configuring a second PCIE controller of a central processing unit to be in an EP mode; and managing a PCIE device by means of the baseboard management controller configured in the RC mode, thereby improving management efficiency of the baseboard management controller over the PCIE device.

Abstract: A backlight module, including a light-emitting unit, emergent light of which passes through a packaging layer and then is transmitted to a surface of a first reflective layer, then passes through the surface of the first reflective layer and passes through the packaging layer again, enters a light-transmitting substrate from the packaging layer, and is emitted from the side of the light-transmitting substrate distant from the light-emitting unit. The thicknesses of the packaging layer and the light-transmitting substrate are effectively utilized to increase an optical path, thereby reducing the thickness of the backlight module. The first reflective layer is Lambertian. The side of the first reflective layer near the light-transmitting substrate and the side distant from the light-transmitting substrate allow the emergent light transmitted to the surface thereof to be scattered and homogenized to increase the optical path again, and can also function as diffusor plates.

Abstract: An array substrate and a manufacturing method therefor, a display panel, and a backlight module, are provided. The array substrate may comprise a base substrate, a metal wiring layer, a first planarization layer, an electrode layer, a second planarization layer, and a functional device layer stacked in sequence. The electrode layer comprises a metal sub-layer and a conductive sub-layer stacked on one side of the base substrate in sequence; the material of the metal sub-layer comprises a metal or a metal alloy; the conductive sub-layer has an oxidation resistance and covers the metal sub-layer. The functional device layer is disposed on the side of the second planarization layer distant from the base substrate, and comprises a plurality of functional devices electrically connected to the electrode layer.

Abstract: A file-sharing method, apparatus and system, an electronic device, and a storage medium. The method includes: receiving file access requests a plurality of slave BMCs, determining, based on a file system mapping table in the master BMC, a file to be acquired corresponding to the file access request and a target slave BMC storing the file to be acquired; and acquiring, based on the file transmission path, the file to be acquired from the target slave BMC and transmits to a slave BMC that sends a file access request. By configuring a file system mapping table in the master BMC, after receiving a file access request, the master BMC queries the file system mapping table to acquire the file to be acquired, thereby enabling file sharing among the BMCs of various server nodes and enhancing the file transmission efficiency of various server nodes in the server system.