Abstract: A process for making an integrated circuit is described wherein sequence of mask steps is applied to a substrate or epitaxial layer of p-type material. The sequence consists of sixteen specific mask steps that permit a variety of bipolar/CMOS/DMOS devices to be fabricated. The mask steps include (1) forming at least one N-well in the p-type material, (2) forming an active region, forming a p-type field region, (4) forming a gate oxide, (5) carrying out a p-type implantation, (6) forming polysilicon gate regions, (7) forming a p-base region, (8) forming a N-extended region, (9) forming a p-top region, 10) carrying out an N+ implant, (11) carrying out a P+ implant, (12) forming contacts, (13) depositing a metal layer, (14) forming vias, (15) depositing a metal layer therethrough, and (16) forming a passivation layer. Up to any three of mask steps (4), (7), (8), and (9) may be omitted depending on the type of integrated circuit.

Abstract: A process for making an integrated circuit is described wherein sequence of mask steps is applied to a substrate or epitaxial layer of p-type material.

Abstract: A process for making a integrated circuits of different typed is described wherein sequence of mask steps is applied to a substrate or epitaxial layer of p-type material. The sequence is chosen from a predefined common set of mask steps according to the particular type of integrated circuit to be fabricated. In this way, various types of integrated circuit can be fabricated in a most efficient manner.

Abstract: A process for making an integrated circuit is described wherein sequence of mask steps is applied to a substrate or epitaxial layer of p-type material.