Abstract: A mending method for a display includes the steps of making a display device light to make a plurality of light emitting positions thereof shine, searching out a plurality of defect positions among the light emitting positions, providing a transferring device having a transferring surface with a plurality of miniature light emitting elements positioned correspondingly to the light emitting positions, planning a mending procedure which includes in the area the transferring surface corresponds to, choosing in chief the largest number of defect positions able to be mended at a single time according to the positions of the miniature light emitting elements and then in the area the transferring surface corresponds to, planning the rest of the defect positions according to the rest of the miniature light emitting elements, and according to the mending procedure, moving the transferring device to weld the miniature light emitting elements at the defect positions.

Abstract: A method of forming a semiconductor structure includes the following operations. A semiconductor epitaxial layer is formed on a first semiconductor substrate. A first side of the semiconductor epitaxial layer is adhered to a transfer substrate by an adhesive layer covering the first side of the semiconductor epitaxial layer. The semiconductor epitaxial layer and the first semiconductor substrate are turned over by the transfer substrate. The first semiconductor substrate is removed to expose a second side of the semiconductor epitaxial layer opposite to the first side. A first semiconductor doped region is formed on the second side of the semiconductor epitaxial layer. After the first semiconductor doped region is formed, the adhesive layer and the transfer substrate are removed.

Abstract: A semiconductor structure includes a semiconductor epitaxial layer, a first semiconductor well, a second semiconductor well, a source doped region, a gate structure and a drain structure. The semiconductor epitaxial layer includes a first side and a second side opposite to the first side. The first semiconductor well is located on the first side of the semiconductor epitaxial layer. The second semiconductor well is located on the second side of the semiconductor epitaxial layer. The source doped region is located in the first semiconductor well. The gate structure overlaps the first semiconductor well and the source doped region on the first side of the semiconductor epitaxial layer. The drain structure includes a semiconductor substrate. The second side of the semiconductor epitaxial layer outside the second semiconductor well includes a connecting surface. The connecting surface of the semiconductor epitaxial layer is connected to the semiconductor substrate.

Abstract: A semiconductor device includes a substrate, an epitaxial layer on the substrate, a first well region in the epitaxial layer, a source region in the first well region, a source contact, a base region wrapping around a sidewall of the source contact and a second well region wrapping around the base region. The substrate, the epitaxial layer and the source region include a plurality of dopants of a first semiconductor type. A bottom of the source contact is lower than a bottom of the first well region. The base region and the second well region include a plurality of dopants of a second semiconductor type. The second semiconductor type is different from the first semiconductor type, and a doping concentration of the base region is higher than a doping concentration of the first well region and a doping concentration of the second well region.

Abstract: The present disclosure provides a transistor structure including a semiconductor stack, a gate structure, and a conductive element. The semiconductor stack includes a drift layer above a substrate, a first doping region in the drift layer, and a depletion region in the drift layer adjacent to the first doping region. The drift region has a first conductive type, and the first doping region has a second conductive type. The gate structure is positioned on the semiconductor stack and covers the depletion region. The conductive element including a metal layer is in the depletion region, in which a top surface of the metal layer directly contacts a bottom surface of the gate structure.

Abstract: A semiconductor device includes a substrate, an epitaxial layer, a well region, a current spreading layer, a source region, a base region and a gate layer. The epitaxial layer is on the substrate. The well region is in the epitaxial layer. The current spreading layer is in the epitaxial layer and below the well region. The current spreading layer includes a plurality of the first doped regions and a plurality of the second doped regions, the first doped regions includes a plurality of dopants of the first semiconductor-type, the second doped regions includes a plurality of dopants of the second semiconductor-type, and the second semiconductor-type is different from the first semiconductor-type. The source region is in the well region. The base region is in the well region and adjacent to the source region. The gate layer is over the epitaxial layer.

Abstract: A power semiconductor device includes a substrate, an epitaxy layer, a source electrode, and a first metal layer. The substrate includes an active region, a buffer region, and a termination region. The buffer region surrounds the active region, and the termination region surrounds the active region. The epitaxy layer is located on the substrate. The epitaxy layer is located in the active region, the buffer region, and the termination region. The epitaxy layer has a first conductive type. The source electrode is located in the active region. The first metal layer is located in the buffer region. The first metal layer is connected to the source electrode.

Abstract: A virtual reality tracker includes a first part and a second part. The first part includes a plurality of first light-emitting diodes (LEDs) and an inner measurement unit (IMU). The inertial measurement unit is used for measuring the acceleration and the triaxial angular velocity of the first part. The second part includes a plurality of second light-emitting diodes. Moreover, the first part and the second part are connected by a flexible component.

Abstract: A memory chip includes a memory cell circuit, a periphery circuit, an interconnect structure, and a control logic circuit. The periphery circuit is positioned under the memory cell circuit and electrically connected to the memory cell circuit. The interconnect structure is positioned on a side surface of the memory cell circuit. The control logic circuit is positioned under the interconnect structure. The control logic circuit is electrically connected to the interconnect structure and the periphery circuit and includes a dynamic random-access memory.

Abstract: A light-emitting diode display device and a light-emission control method thereof are provided. The light-emitting diode display device includes a timing controller, multiple display pixels, and a scanning circuit. The display pixels form multiple display rows. The scanning circuit generates multiple scan signals and multiple light-emission signals that respectively drive the display rows. During a first data-writing time period of a first frame period, the timing controller provides multiple writing data to be respectively written into the display rows. During a light-emitting time period, the scanning circuit drives each of the light-emission signals to generate multiple pulses periodically according to a set period to drive the corresponding display rows. The light-emitting time period is after the first data-writing time period and before a second data-writing time period of a second frame period ends.

Abstract: A light-emitting diode display device and a light-emission control method thereof are provided. The light-emitting diode display device includes a timing controller, multiple display pixels, and a scanning circuit. The display pixels form multiple display rows. The scanning circuit generates multiple scan signals and multiple light-emission signals that respectively drive the display rows. During a first data-writing time period of a first frame period, the timing controller provides multiple writing data to be respectively written into the display rows. During a light-emitting time period, the scanning circuit drives each of the light-emission signals to generate multiple pulses periodically according to a set period to drive the corresponding display rows. The light-emitting time period is after the first data-writing time period and before a second data-writing time period of a second frame period ends.

Abstract: A display apparatus and a pixel circuit thereof are provided. The pixel circuit is configured to drive a light-emitting diode (LED). The pixel circuit includes a driving transistor, a switch, a data writing circuit, and a voltage selector. The switch is turned on during a data-writing time period, and cut-off during a laser time period. The data writing circuit transports a data voltage to a control terminal of the driving transistor during the data-writing time period. During the data-writing time period, a second terminal of the LED receives a first reference voltage, and during the laser time period, the second terminal of the LED receives a second reference voltage. The first reference voltage and the second reference voltage are different.

Abstract: A display apparatus and a pixel circuit thereof are provided. The pixel circuit is configured to drive a light-emitting diode (LED). The pixel circuit includes a driving transistor, a switch, a data writing circuit, and a voltage selector. The switch is turned on during a data-writing time period, and cut-off during a laser time period. The data writing circuit transports a data voltage to a control terminal of the driving transistor during the data-writing time period. During the data-writing time period, a second terminal of the LED receives a first reference voltage, and during the laser time period, the second terminal of the LED receives a second reference voltage. The first reference voltage and the second reference voltage are different.

Abstract: A display panel and a pixel circuit of the display panel are provided. The pixel circuit includes a driving transistor and a light-emitting time length modulator. The driving transistor has a control terminal receiving a pulse width control signal and an amplitude control signal, and the driving transistor generates a driving signal. In a first time period, the light-emitting time length modulator modulates a time length of a plurality of second time periods for providing the driving signal to a light-emitting device according to a light-emitting time control signal.

Abstract: A display panel and a pixel circuit of the display panel are provided. The pixel circuit includes a driving transistor and a light-emitting time length modulator. The driving transistor has a control terminal receiving a pulse width control signal and an amplitude control signal, and the driving transistor generates a driving signal. In a first time period, the light-emitting time length modulator modulates a time length of a plurality of second time periods for providing the driving signal to a light-emitting device according to a light-emitting time control signal.

Abstract: This disclosure relates to a mounting assembly including a screw, an elastic component and a first base. The screw includes a head part, a neck part and an engaging part. The head part and the engaging part are respectively connected to two opposite sides of the neck part which is disposed through the elastic component. The elastic component includes a first side and a second side opposite to each other. The first side presses against the head part. The first base includes a first screw hole. The neck part is disposed through the first screw hole. The head part and the engaging part are respectively located at tow opposite sides of the first base. The second side of the elastic component presses against the first base. In addition, a largest outer diameter of the engaging part is larger than a smallest inner diameter of the first screw hole.

Abstract: A device on an integrated circuit includes a stack of alternating semiconductor lines and insulating lines, and a gate structure over the stack of semiconductor lines. The gate structure includes a vertical portion adjacent the stack on the at least one side, and horizontal extension portions between the semiconductor lines. Sides of the insulating lines can be recessed relative to sides of the semiconductor lines, so at least one side of the stack includes recesses between semiconductor lines. The horizontal extension portions can be in the recesses. The horizontal extension portions have inside surfaces adjacent the sides of the insulating lines, and outside surfaces that can be flush with the sides of the semiconductor lines. The device may include a second gate structure spaced away from the first mentioned gate structure, and an insulating element between horizontal extension portions of the second gate structure and the first mentioned gate structure.

Abstract: A flexible supercapacitor and a preparation method thereof are provided. The flexible supercapacitor includes a polymer-based solid electrolyte layer, two active layers respectively disposed on opposite surfaces of the polymer-based solid electrolyte layer, and two electron conducting layers disposed on outer exposed surfaces of the two active layers.

Abstract: A device on an integrated circuit includes a stack of alternating semiconductor lines and insulating lines, and a gate structure over the stack of semiconductor lines. The gate structure includes a vertical portion adjacent the stack on the at least one side, and horizontal extension portions between the semiconductor lines. Sides of the insulating lines can be recessed relative to sides of the semiconductor lines, so at least one side of the stack includes recesses between semiconductor lines. The horizontal extension portions can be in the recesses. The horizontal extension portions have inside surfaces adjacent the sides of the insulating lines, and outside surfaces that can be flush with the sides of the semiconductor lines. The device may include a second gate structure spaced away from the first mentioned gate structure, and an insulating element between horizontal extension portions of the second gate structure and the first mentioned gate structure.

Abstract: Memory devices and methods for operating such devices are described which can effectively program the metal-oxide memory elements in an array, while also avoiding applying unnecessarily high voltage pulses. Programming operations described herein include applying a lower voltage pulse across a metal-oxide memory element to establish a desired resistance state, and only applying a higher voltage pulse when the lower voltage pulse is insufficient to program the memory element. In doing so, issues associated with applying unnecessarily high voltages across the memory element can be avoided.