Patents by Inventor Yan-Rung Lin

Yan-Rung Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210231570
    Abstract: An inspection apparatus for inspecting a light-emitting diode wafer is provided. The inspection apparatus includes a Z-axis translation stage, a sensing probe, a height measurement module, a carrier, an illumination light source, and a processing device. The sensing probe is integrated with the Z-axis translation stage. The Z-axis translation stage is adapted to drive the sensing probe to move in a Z axis. The sensing probe includes a photoelectric sensor, a beam splitter, and a photoelectric sensing structure. One of the photoelectric sensor of the sensing probe and the height measurement module is adapted to receive a light beam penetrating the beam splitter, and the other one of the photoelectric sensor of the sensing probe and the height measurement module is adapted to receive a light beam reflected by the beam splitter. The carrier is configured to carry the light-emitting diode wafer. The illumination light source is configured to emit an illumination beam to irradiate the light-emitting diode wafer.
    Type: Application
    Filed: December 28, 2020
    Publication date: July 29, 2021
    Applicant: Industrial Technology Research Institute
    Inventors: Yan-Rung Lin, Chih-Hsiang Liu, Chung-Lun Kuo, Hsiang-Chun Wei, Yeou-Sung Lin, Chieh-Yi Lo
  • Patent number: 11002783
    Abstract: A method for inspecting light-emitting diodes (LEDs) including following steps is provided. A plurality of LEDs are provided. A charge distribution, an electrical field distribution, or a voltage distribution on the LEDs that are irradiated by an illumination beam at the same time are inspected by a sensing probe, so as to determine electro-optical characteristics of the LEDs. Besides, an inspection apparatus is also provided.
    Type: Grant
    Filed: December 24, 2018
    Date of Patent: May 11, 2021
    Assignee: Industrial Technology Research Institute
    Inventors: Yan-Rung Lin, Chih-Hsiang Liu, Shie-Chang Jeng
  • Publication number: 20200371152
    Abstract: An inspection apparatus including an illumination light source, a sensing probe and a processing device is provided. The illumination light source emits an illumination beam to simultaneously irradiate the plurality of light-emitting diode. The sensing probe is configured to measure a charge distribution, an electric field distribution, or a voltage distribution on the plurality of light-emitting diodes simultaneously irradiated by the illumination beam. The processing device determines a plurality of electro-optical characteristics of the plurality of light-emitting diodes through the charge distribution, the electric field distribution, or the voltage distribution on the plurality of light-emitting diodes simultaneously irradiated by the illumination beam. Moreover, a method of for inspecting light-emitting diodes is also provided.
    Type: Application
    Filed: June 19, 2020
    Publication date: November 26, 2020
    Applicant: Industrial Technology Research Institute
    Inventors: Yan-Rung Lin, Chung-Lun Kuo, Chih-Hsiang Liu, Shie-Chang Jeng
  • Publication number: 20200200817
    Abstract: A method for inspecting light-emitting diodes (LEDs) including following steps is provided. A plurality of LEDs are provided. A charge distribution, an electrical field distribution, or a voltage distribution on the LEDs that are irradiated by an illumination beam at the same time are inspected by a sensing probe, so as to determine electro-optical characteristics of the LEDs. Besides, an inspection apparatus is also provided.
    Type: Application
    Filed: December 24, 2018
    Publication date: June 25, 2020
    Applicant: Industrial Technology Research Institute
    Inventors: Yan-Rung Lin, Chih-Hsiang Liu, Shie-Chang Jeng
  • Patent number: 10483326
    Abstract: An image sensor and a manufacturing method thereof are provided. The image sensor includes a substrate, a patterned electrode layer, a pixel isolation structure and a patterned photo-electric conversion layer. The patterned electrode layer is disposed on the substrate and includes a plurality of electrode blocks separated from one another. The pixel isolation structure is disposed on the substrate and includes a metal halide. The patterned photo-electric conversion layer is disposed on the electrode blocks to form a plurality of photo-electric conversion blocks corresponding to the electrode blocks. The photo-electric conversion blocks include a perovskite material. The photo-electric conversion blocks are separated from one another by the pixel isolation structure.
    Type: Grant
    Filed: December 21, 2017
    Date of Patent: November 19, 2019
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Sheng-Min Yu, Wen-Ching Sun, Pei-Wen Yen, Yan-Rung Lin
  • Patent number: 10477122
    Abstract: An image sensor including a plurality of pixels and a plurality of pixel sensing circuits is provided. The pixels are arranged in a pixel array. The pixels are configured to sense an image to obtain a plurality of reference pictures. The pixels include a plurality of pixel types. The pixel sensing circuits are respectively and electrically connected to the pixels. The pixel sensing circuits are configured to respectively receive a photo current generated by each of the pixels. The pixels have different characteristic curves based on the pixel types, and at least one of an electrode structure parameter and an electrode bias of each of the pixels is determined according to a correspondingly characteristic curve. In addition, an image sensing method is also provided.
    Type: Grant
    Filed: December 30, 2016
    Date of Patent: November 12, 2019
    Assignee: Industrial Technology Research Institute
    Inventors: Yan-Rung Lin, Pei-Wen Yen, Siou-Cheng Lou, Kai-Ping Chuang
  • Patent number: 10418392
    Abstract: An image sensor and a manufacturing method thereof are provided. The image sensor includes a pixel sensing circuit, a pixel electrode, and an opto-electrical conversion layer. The pixel sensing circuit is corresponding to a plurality of pixel regions. The pixel electrode is disposed on the pixel sensing circuit. The pixel electrode includes a first electrode and a second electrode and is electrically connected to the pixel sensing circuit. The first electrode and the second electrode are coplanar, and have different polarities. The opto-electrical conversion layer is disposed on the pixel sensing circuit. The opto-electrical conversion layer includes a plurality of opto-electrical conversion portions, each of the opto-electrical conversion portions is corresponding to each of the pixel regions, and the opto-electrical conversion portions are separated from each other by a pixel isolation trench.
    Type: Grant
    Filed: June 22, 2018
    Date of Patent: September 17, 2019
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Pei-Wen Yen, Yan-Rung Lin, Kai-Ping Chuang, Sheng-Min Yu
  • Patent number: 10403657
    Abstract: An image sensor and a manufacturing method thereof are provided. The image sensor includes a pixel sensing circuit, a pixel electrode, and an opto-electrical conversion layer. The pixel sensing circuit is corresponding to a plurality of pixel regions. The pixel electrode is disposed on the pixel sensing circuit. The pixel electrode includes a first electrode and a second electrode and is electrically connected to the pixel sensing circuit. The first electrode and the second electrode are coplanar, and have different polarities. The opto-electrical conversion layer is disposed on the pixel sensing circuit. The opto-electrical conversion layer includes a plurality of opto-electrical conversion portions, each of the opto-electrical conversion portions is corresponding to each of the pixel regions, and the opto-electrical conversion portions are separated from each other by a pixel isolation trench.
    Type: Grant
    Filed: November 14, 2017
    Date of Patent: September 3, 2019
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Pei-Wen Yen, Yan-Rung Lin, Kai-Ping Chuang, Sheng-Min Yu
  • Publication number: 20190074326
    Abstract: An image sensor and a manufacturing method thereof are provided. The image sensor includes a substrate, a patterned electrode layer, a pixel isolation structure and a patterned photo-electric conversion layer. The patterned electrode layer is disposed on the substrate and includes a plurality of electrode blocks separated from one another. The pixel isolation structure is disposed on the substrate and includes a metal halide. The patterned photo-electric conversion layer is disposed on the electrode blocks to form a plurality of photo-electric conversion blocks corresponding to the electrode blocks. The photo-electric conversion blocks include a perovskite material. The photo-electric conversion blocks are separated from one another by the pixel isolation structure.
    Type: Application
    Filed: December 21, 2017
    Publication date: March 7, 2019
    Inventors: Sheng-Min YU, Wen-Ching SUN, Pei-Wen YEN, Yan-Rung LIN
  • Publication number: 20180301485
    Abstract: An image sensor and a manufacturing method thereof are provided. The image sensor includes a pixel sensing circuit, a pixel electrode, and an opto-electrical conversion layer. The pixel sensing circuit is corresponding to a plurality of pixel regions. The pixel electrode is disposed on the pixel sensing circuit. The pixel electrode includes a first electrode and a second electrode and is electrically connected to the pixel sensing circuit. The first electrode and the second electrode are coplanar, and have different polarities. The opto-electrical conversion layer is disposed on the pixel sensing circuit. The opto-electrical conversion layer includes a plurality of opto-electrical conversion portions, each of the opto-electrical conversion portions is corresponding to each of the pixel regions, and the opto-electrical conversion portions are separated from each other by a pixel isolation trench.
    Type: Application
    Filed: June 22, 2018
    Publication date: October 18, 2018
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Pei-Wen YEN, Yan-Rung LIN, Kai-Ping CHUANG, Sheng-Min YU
  • Patent number: 10038019
    Abstract: An image sensor and a manufacturing method thereof are provided. The image sensor includes a pixel sensing circuit, a pixel electrode, and an opto-electrical conversion layer. The pixel sensing circuit is corresponding to a plurality of pixel regions. The pixel electrode is disposed on the pixel sensing circuit. The pixel electrode includes a first electrode and a second electrode and is electrically connected to the pixel sensing circuit. The first electrode and the second electrode are coplanar, and have different polarities. The opto-electrical conversion layer is disposed on the pixel sensing circuit. The opto-electrical conversion layer includes a plurality of opto-electrical conversion portions, each of the opto-electrical conversion portions is corresponding to each of the pixel regions, and the opto-electrical conversion portions are separated from each other by a pixel isolation trench.
    Type: Grant
    Filed: December 29, 2016
    Date of Patent: July 31, 2018
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Pei-Wen Yen, Yan-Rung Lin, Kai-Ping Chuang, Sheng-Min Yu
  • Patent number: 10038033
    Abstract: An image sensor is provided. The image sensor includes a pixel sensing circuit corresponding to at least a first pixel region and a second pixel region adjacent to each other, a pixel electrode disposed on the pixel sensing circuit, and a opto electrical conversion layer including a photo sensing layer and a carrier transport layer disposed on the pixel sensing circuit and the pixel electrode. The pixel electrode is electrically connected to the pixel sensing circuit and includes a plurality of first electrodes and a plurality of second electrodes. The first electrodes and the second electrodes are coplanar and have different polarities. The first electrode or the second electrode located in the first pixel region is adjacent to the first electrode or the second electrode having the same polarity located in the second pixel region.
    Type: Grant
    Filed: December 29, 2015
    Date of Patent: July 31, 2018
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Pei-Wen Yen, Yan-Rung Lin, Kai-Ping Chuang
  • Publication number: 20180152645
    Abstract: An image sensor including a plurality of pixels and a plurality of pixel sensing circuits is provided. The pixels are arranged in a pixel array. The pixels are configured to sense an image to obtain a plurality of reference pictures. The pixels include a plurality of pixel types. The pixel sensing circuits are respectively and electrically connected to the pixels. The pixel sensing circuits are configured to respectively receive a photo current generated by each of the pixels. The pixels have different characteristic curves based on the pixel types, and at least one of an electrode structure parameter and an electrode bias of each of the pixels is determined according to a correspondingly characteristic curve. In addition, an image sensing method is also provided.
    Type: Application
    Filed: December 30, 2016
    Publication date: May 31, 2018
    Inventors: Yan-Rung Lin, Pei-Wen Yen, Siou-Cheng Lou, Kai-Ping Chuang
  • Patent number: 9948868
    Abstract: A multi-point spectral system includes an imaging lens, an image capturing module and a multiwavelength filter (MWF) disposed between the imaging lens and the image capturing module. The MWF has a plurality of narrow-bandpass filter (NBPF) units arranged in an array, and each of the plurality of NBPF units has a respective predetermined central transmitted wavelength. The multi-point spectral system is provided to capture plural spectral images of a scene, which contain spectral or color information of the scene. The multi-point spectral system may utilize the information of the plural spectral images to recognize features revealed at the scene.
    Type: Grant
    Filed: December 28, 2015
    Date of Patent: April 17, 2018
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Yan-Rung Lin, Hsin-Yi Chen, Chia-Liang Yeh, Yi-Chen Hsieh
  • Publication number: 20180083054
    Abstract: An image sensor and a manufacturing method thereof are provided. The image sensor includes a pixel sensing circuit, a pixel electrode, and an opto-electrical conversion layer. The pixel sensing circuit is corresponding to a plurality of pixel regions. The pixel electrode is disposed on the pixel sensing circuit. The pixel electrode includes a first electrode and a second electrode and is electrically connected to the pixel sensing circuit. The first electrode and the second electrode are coplanar, and have different polarities. The opto-electrical conversion layer is disposed on the pixel sensing circuit. The opto-electrical conversion layer includes a plurality of opto-electrical conversion portions, each of the opto-electrical conversion portions is corresponding to each of the pixel regions, and the opto-electrical conversion portions are separated from each other by a pixel isolation trench.
    Type: Application
    Filed: November 14, 2017
    Publication date: March 22, 2018
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Pei-Wen YEN, Yan-Rung LIN, Kai-Ping CHUANG, Sheng-Min YU
  • Publication number: 20170186818
    Abstract: An image sensor is provided. The image sensor includes a pixel sensing circuit corresponding to at least a first pixel region and a second pixel region adjacent to each other, a pixel electrode disposed on the pixel sensing circuit, and a opto electrical conversion layer including a photo sensing layer and a carrier transport layer disposed on the pixel sensing circuit and the pixel electrode. The pixel electrode is electrically connected to the pixel sensing circuit and includes a plurality of first electrodes and a plurality of second electrodes. The first electrodes and the second electrodes are coplanar and have different polarities. The first electrode or the second electrode located in the first pixel region is adjacent to the first electrode or the second electrode having the same polarity located in the second pixel region.
    Type: Application
    Filed: December 29, 2015
    Publication date: June 29, 2017
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Pei-Wen Yen, Yan-Rung Lin, Kai-Ping Chuang
  • Publication number: 20170186788
    Abstract: An image sensor and a manufacturing method thereof are provided. The image sensor includes a pixel sensing circuit, a pixel electrode, and an opto-electrical conversion layer. The pixel sensing circuit is corresponding to a plurality of pixel regions. The pixel electrode is disposed on the pixel sensing circuit. The pixel electrode includes a first electrode and a second electrode and is electrically connected to the pixel sensing circuit. The first electrode and the second electrode are coplanar, and have different polarities. The opto-electrical conversion layer is disposed on the pixel sensing circuit. The opto-electrical conversion layer includes a plurality of opto-electrical conversion portions, each of the opto-electrical conversion portions is corresponding to each of the pixel regions, and the opto-electrical conversion portions are separated from each other by a pixel isolation trench.
    Type: Application
    Filed: December 29, 2016
    Publication date: June 29, 2017
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Pei-Wen YEN, Yan-Rung LIN, Kai-Ping CHUANG, Sheng-Min YU
  • Publication number: 20170163901
    Abstract: A multi-point spectral system includes an imaging lens, an image capturing module and a multiwavelength filter (MWF) disposed between the imaging lens and the image capturing module. The MWF has a plurality of narrow-bandpass filter (NBPF) units arranged in an array, and each of the plurality of NBPF units has a respective predetermined central transmitted wavelength. The multi-point spectral system is provided to capture plural spectral images of a scene, which contain spectral or color information of the scene. The multi-point spectral system may utilize the information of the plural spectral images to recognize features revealed at the scene.
    Type: Application
    Filed: December 28, 2015
    Publication date: June 8, 2017
    Inventors: Yan-Rung Lin, Hsin-Yi Chen, Chia-Liang Yeh, Yi-Chen Hsieh
  • Patent number: 9074954
    Abstract: A readout apparatus and a driving method for sensor are provided. The readout apparatus includes an adjustable bias unit, a sensor unit, a signal converting unit, a checking unit and a control unit. The sensor unit senses physical energy and outputs a sensing result by using a bias voltage outputted from the adjustable bias unit. The control unit controls the adjustable bias unit according to the sensing result, so as to adjust the bias voltage. Therefore, the readout apparatus can reduce continuous power loss caused by long-term detection.
    Type: Grant
    Filed: September 15, 2012
    Date of Patent: July 7, 2015
    Assignee: Industrial Technology Research Institute
    Inventors: Kuo-Hua Tseng, Chang-Ho Liou, Wen-Ching Ko, Yan-Rung Lin, Kuan-Wei Chen
  • Patent number: 8941098
    Abstract: A light detecting array structure and a light detecting module are provided. The light detecting array structure includes a plurality of first electrodes, a plurality of second electrodes, a first carrier selective layer, a second carrier selective layer, and a light-absorbing active layer. The second electrodes are disposed on one side of the first electrodes. Between the first electrodes and the second electrodes, a first carrier selective layer, a light-absorbing active layer and a second carrier selective layer are disposed. The light detecting module includes the light detecting array structure and a control unit. The control unit is coupled to the first electrodes and second electrodes, selectively provides at least two cross voltages between each of the first electrodes and each of the second electrodes, and reads photocurrents flowing through the first electrodes and second electrodes.
    Type: Grant
    Filed: May 17, 2012
    Date of Patent: January 27, 2015
    Assignees: Industrial Technology Research Institute, National Tsing Hua University
    Inventors: Yan-Rung Lin, Chang-Ho Liou, Sheng-Fu Horng, Jen-Chun Wang, Yun-Ru Hong, Ming-Kun Lee, Hsin-Fei Meng