Patents by Inventor Yan-Si LIN

Yan-Si LIN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11393776
    Abstract: A semiconductor device package includes a substrate, a first coil, a dielectric layer and a second coil. The first coil is disposed on the substrate. The first coil includes a first conductive segment and a second conductive segment. The dielectric layer covers the first conductive segment of the first coil and the second conductive segment of the first coil and defines a first recess between the first conductive segment of the first coil and the second conductive segment of the first coil. The second coil is disposed on the dielectric layer. The second coil has a first conductive segment disposed within the first recess.
    Type: Grant
    Filed: May 17, 2018
    Date of Patent: July 19, 2022
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Shun-Tsat Tu, Pei-Jen Lo, Yan-Si Lin, Chien-Chi Kuo
  • Publication number: 20190355676
    Abstract: A semiconductor device package includes a substrate, a first coil, a dielectric layer and a second coil. The first coil is disposed on the substrate. The first coil includes a first conductive segment and a second conductive segment. The dielectric layer covers the first conductive segment of the first coil and the second conductive segment of the first coil and defines a first recess between the first conductive segment of the first coil and the second conductive segment of the first coil. The second coil is disposed on the dielectric layer. The second coil has a first conductive segment disposed within the first recess.
    Type: Application
    Filed: May 17, 2018
    Publication date: November 21, 2019
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Shun-Tsat TU, Pei-Jen LO, Yan-Si LIN, Chien-Chi KUO