Patents by Inventor Yan Zun Li
Yan Zun Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11152300Abstract: An electrical fuse device is disclosed. A circuit apparatus can include the fuse device, a first circuit element and a second circuit element. The fuse includes a first contact that has a first electromigration resistance, a second contact that has a second electromigration resistance and a metal line, which is coupled to the first contact and to the second contact, that has a third electromigration resistance that is lower than the second electromigration resistance. The first circuit element is coupled to the first contact and the second circuit element coupled to the second contact. The fuse is configured to conduct a programming current from the first contact to the second contact through the metal line. Further, the programming current causes the metal line to electromigrate away from the second contact to electrically isolate the second circuit element from the first circuit element.Type: GrantFiled: September 16, 2011Date of Patent: October 19, 2021Assignee: International Business Machines CorporationInventors: Baozhen Li, Yan Zun Li, Keith Kwong Hon Wong, Chih-Chao Yang
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Patent number: 9548270Abstract: An electrical fuse device is disclosed. A circuit apparatus can include the fuse device, a first circuit element and a second circuit element. The fuse includes a first contact that has a first electromigration resistance, a second contact that has a second electromigration resistance and a metal line, which is coupled to the first contact and to the second contact, that has a third electromigration resistance that is lower than the second electromigration resistance. The first circuit element is coupled to the first contact and the second circuit element coupled to the second contact. The fuse is configured to conduct a programming current from the first contact to the second contact through the metal line. Further, the programming current causes the metal line to electromigrate away from the second contact to electrically isolate the second circuit element from the first circuit element.Type: GrantFiled: September 15, 2015Date of Patent: January 17, 2017Assignee: International Business Machines CorporationInventors: Baozhen Li, Yan Zun Li, Keith Kwong Hon Wong, Chih-Chao Yang
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Publication number: 20160005690Abstract: An electrical fuse device is disclosed. A circuit apparatus can include the fuse device, a first circuit element and a second circuit element. The fuse includes a first contact that has a first electromigration resistance, a second contact that has a second electromigration resistance and a metal line, which is coupled to the first contact and to the second contact, that has a third electromigration resistance that is lower than the second electromigration resistance. The first circuit element is coupled to the first contact and the second circuit element coupled to the second contact. The fuse is configured to conduct a programming current from the first contact to the second contact through the metal line. Further, the programming current causes the metal line to electromigrate away from the second contact to electrically isolate the second circuit element from the first circuit element.Type: ApplicationFiled: September 15, 2015Publication date: January 7, 2016Inventors: BAOZHEN LI, YAN ZUN LI, KEITH KWONG HON WONG, CHIH-CHAO YANG
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Patent number: 9224687Abstract: Methods of forming an electrically programmable fuse (e-fuse) structure and the e-fuse structure are disclosed. One embodiment of an e-fuse structure includes: a silicon structure; a pair of silicide contact regions overlying the silicon structure; and a silicide link overlying the silicon structure and connecting the pair of silicide regions, the silicide link having a depth less than a depth of each of the pair of silicide contact regions.Type: GrantFiled: September 5, 2014Date of Patent: December 29, 2015Assignee: GLOBALFOUNDRIES INC.Inventors: Yan Zun Li, Zhengwen Li, Chengwen Pei, Jian Yu
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Patent number: 9153546Abstract: An electrical fuse has an anode contact on a surface of a semiconductor substrate. The electrical fuse has a cathode contact on the surface of the semiconductor substrate spaced from the anode contact. The electrical fuse has a link within the substrate electrically interconnecting the anode contact and the cathode contact. The link comprises a semiconductor layer and a silicide layer. The silicide layer extends beyond the anode contact. An opposite end of the silicide layer extends beyond the cathode contact. A silicon germanium region is embedded in the semiconductor layer under the silicide layer, between the anode contact and the cathode contact.Type: GrantFiled: August 7, 2014Date of Patent: October 6, 2015Assignee: International Business Machines CorporationInventors: Yan Zun Li, Zhengwen Li, Chengwen Pei, Jian Yu
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Patent number: 9093453Abstract: An electronic fuse link with lower programming current for high performance and self-aligned methods of forming the same. The invention provides a horizontal e-fuse structure in the middle of the line. A reduced fuse link width is achieved by spacers on sides of pair of dummy or active gates, to create sub-lithographic dimension between gates with spacers to confine a fuse link. A reduced height in the third dimension on the fuse link achieved by etching the link, thereby creating a fuse link having a sub-lithographic size in all dimensions. The fuse link is formed over an isolation region to enhanced heating and aid fuse blow.Type: GrantFiled: October 7, 2013Date of Patent: July 28, 2015Assignee: International Business Machines CorporationInventors: Junjun Li, Yan Zun Li, Chengwen Pei, Pinping Sun
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Patent number: 9064871Abstract: An electronic fuse structure including a first Mx metal comprising a conductive cap, an Mx+1 metal located above the Mx metal, wherein the Mx+1 metal does not comprise a conductive cap, and a via, wherein the via electrically connects the Mx metal to the Mx+1 metal in a vertical orientation.Type: GrantFiled: July 25, 2014Date of Patent: June 23, 2015Assignee: International Business Machines CorporationInventors: Junjing Bao, Elbert E. Huang, Yan Zun Li, Dan Moy
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Patent number: 9058999Abstract: An antifuse according to an embodiment of the invention herein can include a depletion mode metal oxide semiconductor field effect transistor (“MOSFET”) having a conduction channel and a metal gate overlying the conduction channel. A cathode and an anode of the antifuse can be electrically coupled to the gate, such that the antifuse is programmable by driving a programming current between the cathode and the anode to cause material of the metal gate to migrate away. Under appropriate biasing conditions, when the antifuse is unprogrammed, the conduction channel is turned on unless a voltage above a first threshold voltage is applied to the gate to turn off the conduction channel. The gate can be configured such that when the antifuse has been programmed, the conduction channel remains turned on even if a voltage above the first threshold voltage is applied between the gate and a source region of the MOSFET.Type: GrantFiled: August 1, 2014Date of Patent: June 16, 2015Assignee: International Business Machines CorporationInventor: Yan-Zun Li
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Patent number: 9024411Abstract: A three-dimensionally (3d) confined conductor advantageously used as an electronic fuse and self-aligned methods of forming the same. By non-conformal deposition of a dielectric film over raised structures, a 3d confined tube, which may be sub-lithographic, is formed between the raised structures. Etching holes which intersect the 3d confined region and subsequent metal deposition fills the 3d confined region and forms contacts. When the raised structures are gates, the fuse element may be located at the middle of the line (i.e. in pre-metal dielectric). Other methods for creating the structure are also described.Type: GrantFiled: August 12, 2013Date of Patent: May 5, 2015Assignee: International Business Machines CorporationInventors: Junjun Li, Yan Zun Li, Chengwen Pei, Pinping Sun
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Publication number: 20150097266Abstract: An electronic fuse link with lower programming current for high performance and self-aligned methods of forming the same. The invention provides a horizontal e-fuse structure in the middle of the line. A reduced fuse link width is achieved by spacers on sides of pair of dummy or active gates, to create sub-lithographic dimension between gates with spacers to confine a fuse link. A reduced height in the third dimension on the fuse link achieved by etching the link, thereby creating a fuse link having a sub-lithographic size in all dimensions. The fuse link is formed over an isolation region to enhanced heating and aid fuse blow.Type: ApplicationFiled: October 7, 2013Publication date: April 9, 2015Applicant: International Business Machines CorporationInventors: Junjun Li, Yan Zun Li, Chengwen Pei, Pinping Sun
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Patent number: 8981523Abstract: Methods of forming an electrically programmable fuse (e-fuse) structure and the e-fuse structure are disclosed. Various embodiments of forming the e-fuse structure include: forming a dummy poly gate structure to contact a surface of a silicon structure, the dummy poly gate structure extending only a part of a length of the silicon structure; and converting an unobstructed portion of the surface of the silicon structure to silicide to form a thinned strip of the silicide between two end regions.Type: GrantFiled: March 14, 2012Date of Patent: March 17, 2015Assignee: International Business Machines CorporationInventors: Yan Zun Li, Zhengwen Li, Chengwen Pei, Jian Yu
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Publication number: 20150041950Abstract: A three-dimensionally (3d) confined conductor advantageously used as an electronic fuse and self-aligned methods of forming the same. By non-conformal deposition of a dielectric film over raised structures, a 3d confined tube, which may be sub-lithographic, is formed between the raised structures. Etching holes which intersect the 3d confined region and subsequent metal deposition fills the 3d confined region and forms contacts. When the raised structures are gates, the fuse element may be located at the middle of the line (i.e. in pre-metal dielectric). Other methods for creating the structure are also described.Type: ApplicationFiled: August 12, 2013Publication date: February 12, 2015Applicant: International Business Machines CorporationInventors: Junjun Li, Yan Zun Li, Chengwen Pei, Pinping Sun
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Publication number: 20140374874Abstract: Methods of forming an electrically programmable fuse (e-fuse) structure and the e-fuse structure are disclosed. One embodiment of an e-fuse structure includes: a silicon structure; a pair of silicide contact regions overlying the silicon structure; and a silicide link overlying the silicon structure and connecting the pair of silicide regions, the silicide link having a depth less than a depth of each of the pair of silicide contact regions.Type: ApplicationFiled: September 5, 2014Publication date: December 25, 2014Inventors: Yan Zun Li, Zhengwen Li, Chengwen Pei, Jian Yu
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Publication number: 20140370671Abstract: An electrical fuse has an anode contact on a surface of a semiconductor substrate. The electrical fuse has a cathode contact on the surface of the semiconductor substrate spaced from the anode contact. The electrical fuse has a link within the substrate electrically interconnecting the anode contact and the cathode contact. The link comprises a semiconductor layer and a silicide layer. The silicide layer extends beyond the anode contact. An opposite end of the silicide layer extends beyond the cathode contact. A silicon germanium region is embedded in the semiconductor layer under the silicide layer, between the anode contact and the cathode contact.Type: ApplicationFiled: August 7, 2014Publication date: December 18, 2014Inventors: Yan Zun Li, Zhengwen Li, Chengwen Pei, Jian Yu
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Patent number: 8896088Abstract: An electrical fuse has an anode contact on a surface of a semiconductor substrate. The electrical fuse has a cathode contact on the surface of the semiconductor substrate spaced from the anode contact. The electrical fuse has a link within the substrate electrically interconnecting the anode contact and the cathode contact. The link comprises a semiconductor layer and a silicide layer. The silicide layer extends beyond the anode contact. An opposite end of the silicide layer extends beyond the cathode contact. A silicon germanium region is embedded in the semiconductor layer under the silicide layer, between the anode contact and the cathode contact.Type: GrantFiled: April 27, 2011Date of Patent: November 25, 2014Assignee: International Business Machines CorporationInventors: Yan Zun Li, Zhengwen Li, Chengwen Pei, Jian Yu
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Publication number: 20140340138Abstract: An antifuse according to an embodiment of the invention herein can include a depletion mode metal oxide semiconductor field effect transistor (“MOSFET”) having a conduction channel and a metal gate overlying the conduction channel. A cathode and an anode of the antifuse can be electrically coupled to the gate, such that the antifuse is programmable by driving a programming current between the cathode and the anode to cause material of the metal gate to migrate away. Under appropriate biasing conditions, when the antifuse is unprogrammed, the conduction channel is turned on unless a voltage above a first threshold voltage is applied to the gate to turn off the conduction channel. The gate can be configured such that when the antifuse has been programmed, the conduction channel remains turned on even if a voltage above the first threshold voltage is applied between the gate and a source region of the MOSFET.Type: ApplicationFiled: August 1, 2014Publication date: November 20, 2014Inventor: Yan-Zun Li
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Patent number: 8891328Abstract: An antifuse according to an embodiment of the invention herein can include a depletion mode metal oxide semiconductor field effect transistor (“MOSFET”) having a conduction channel and a metal gate overlying the conduction channel. A cathode and an anode of the antifuse can be electrically coupled to the gate and spaced apart from one another in a direction the gate extends, such that the antifuse is programmable by driving a programming current between the cathode and the anode to cause material of the metal gate to migrate away. The gate may be configured such that, under appropriate biasing conditions, when the antifuse is unprogrammed, the conduction channel is turned on unless a voltage above a first threshold voltage is applied to the gate to turn off the conduction channel. The gate can be configured such that when the antifuse has been programmed, the conduction channel remains turned on even if a voltage above the first threshold voltage is applied between the gate and a source region of the MOSFET.Type: GrantFiled: June 27, 2011Date of Patent: November 18, 2014Assignee: International Business Machines CorporationInventor: Yan-Zun Li
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Publication number: 20140332856Abstract: An electronic fuse structure including a first Mx metal comprising a conductive cap, an Mx+1 metal located above the Mx metal, wherein the Mx+1 metal does not comprise a conductive cap, and a via, wherein the via electrically connects the Mx metal to the Mx+1 metal in a vertical orientation.Type: ApplicationFiled: July 25, 2014Publication date: November 13, 2014Inventors: Junjing Bao, Elbert E. Huang, Yan Zun Li, Dan Moy
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Patent number: 8841208Abstract: An electronic fuse structure including a first Mx metal comprising a conductive cap, an Mx+1 metal located above the Mx metal, wherein the Mx+1 metal does not comprise a conductive cap, and a via, wherein the via electrically connects the Mx metal to the Mx+1 metal in a vertical orientation.Type: GrantFiled: July 18, 2012Date of Patent: September 23, 2014Assignee: International Business Machines CorporationInventors: Junjing Bao, Elbert Emin Huang, Yan Zun Li, Dan Moy
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Publication number: 20140021578Abstract: An electronic fuse structure including a first Mx metal comprising a conductive cap, an Mx+1 metal located above the Mx metal, wherein the Mx+1 metal does not comprise a conductive cap, and a via, wherein the via electrically connects the Mx metal to the Mx+1 metal in a vertical orientation.Type: ApplicationFiled: July 18, 2012Publication date: January 23, 2014Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Junjing Bao, Elbert Emin Huang, Yan Zun Li, Dan Moy