Abstract: In a package device, wherein integrated circuit devices are bonded to a substrate, stress arising from mechanical strain, CTE mismatch, and the like can be alleviated or eliminated by incorporating stress buffering air gaps into a protective material, such as a gap fill oxide. The air gaps can be formed by tuning and changing deposition parameters during the deposition process and/or by tuning the size and placement of adjacent integrated circuit devices in the package, and/or by forming trenches in the protective material prior to the bonding process.

Abstract: A package includes a first die over and bonded to a first side of a second die, where the second die includes a first substrate, a first interconnect structure over the first substrate, a seal ring disposed within the first interconnect structure, first dummy through substrate vias (TSVs) extending through edge regions of the first substrate of the second die and in physical contact with the seal ring, and functional TSVs extending through a central region of the first substrate of the second die.

Abstract: A method includes depositing a dielectric layer on a package component having a first warpage, and performing an implantation process to implant the dielectric layer with a stress modulation dopant. After the implantation process, the package component has a second warpage smaller than the first warpage.

Abstract: A method includes bonding a device die onto a package component. The device die includes a semiconductor substrate, and a through-via extending into the semiconductor substrate. The method further includes depositing a dielectric liner lining sidewalls of the device die, depositing a dielectric layer on the dielectric liner, and planarizing the dielectric layer and the device die. Remaining portions of the dielectric liner and the dielectric layer form a gap-filling region, and a top end of the through-via is revealed. An implantation process is performed to introduce a stress modulation dopant into at least one of the dielectric liner and the dielectric layer. A redistribution line is formed over and electrically connecting to the through-via.

Abstract: A method includes depositing a first dielectric layer as a first surface layer of a first package component, forming a plurality of metal pads in the first dielectric layer, depositing a second dielectric layer as a second surface layer of a second package component, and bonding the second package component to the first package component. The first dielectric layer is bonded to the second dielectric layer. At a time after the bonding, a metal pad in the plurality of metal pads has a top surface contacting a bottom surface of the second dielectric layer.

Abstract: A semiconductor device includes a first die. The first die includes a first dielectric bonding layer thereon and a plurality of first dielectric bonding patterns in the first dielectric bonding layer. A composition of the first dielectric bonding patterns is different from a composition of the first dielectric bonding layer.

Abstract: A die bonding tool having a tool head including a plurality of openings fluidly coupled to a vacuum source to selectively secure a semiconductor die onto the tool head via the application of a suction force. The plurality of openings have non-uniform cross-sectional areas, including one or more first openings having a first cross-sectional area and one or more second openings having a second cross-sectional area that is greater than the first cross-section area. A first minimum offset distance between each of the first openings and any peripheral edge of the tool head is less than a second minimum offset distance between each of the second openings and any peripheral edge of the tool head. The configuration of the openings in the tool head may improve bonding of the semiconductor die to a substrate by inhibiting air becoming trapped between the semiconductor die and the substrate during the bonding process.

Abstract: A die bonding device is provided to pick up a die and place the die on a carrier. The die bonding device includes a pick-and-placer and a vacuum generator. The pick-and-placer includes an adsorption surface, a first channel and a second channel, and the first channel and the second channel are not connected to each other. The vacuum generator includes a first vacuum pump and a second vacuum pump, the first vacuum pump is connected to the first channel via a pipeline, the second vacuum pump is connected to the second channel via another pipeline, the first vacuum pump and the second vacuum pump make the pick-and-placer adsorb the die to the adsorption surface during a vacuum holding period, and the first vacuum pump and the second vacuum pump respectively make the pick-and-placer release the die to the carrier sequentially in a vacuum release period.

Abstract: Provided are a semiconductor device and a method for manufacturing the same, and a semiconductor package. The semiconductor device includes a die stack and a cap substrate. The die stack includes a first die, second dies stacked on the first die, and a third die stacked on the second dies. The first die includes first through semiconductor vias. Each of the second dies include second through semiconductor vias. The third die includes third through semiconductor vias. The cap substrate is disposed on the third die of the die stack. A sum of a thickness of the third die and a thickness of the cap substrate ranges from about 50 ?m to about 80 ?m.

Abstract: Provided are a semiconductor device and a method for manufacturing the same, and a semiconductor package. The semiconductor device includes a die stack and a cap substrate. The die stack includes a first die, second dies stacked on the first die, and a third die stacked on the second dies. The first die includes first through semiconductor vias. Each of the second dies include second through semiconductor vias. The third die includes third through semiconductor vias. The cap substrate is disposed on the third die of the die stack. A sum of a thickness of the third die and a thickness of the cap substrate ranges from about 50 ?m to about 80 ?m.

Abstract: A method and apparatus for bonding semiconductor devices are disclosed. In an embodiment, the method may include attaching a first die to a flip head of a flip module, flipping the first die with the flip module, removing the first die from the flip module after flipping the first die, inspecting the flip head of the flip module for contamination after removing the first die, cleaning the flip head with an in situ cleaning module after inspecting the flip head, and attaching a second die to the flip head after cleaning the flip head.

Abstract: A method and apparatus for bonding semiconductor devices are disclosed. In an embodiment, the method may include attaching a first die to a flip head of a flip module, flipping the first die with the flip module, removing the first die from the flip module after flipping the first die, inspecting the flip head of the flip module for contamination after removing the first die, cleaning the flip head with an in situ cleaning module after inspecting the flip head, and attaching a second die to the flip head after cleaning the flip head.

Abstract: A method and apparatus for bonding semiconductor devices are disclosed. In an embodiment, the method may include attaching a first die to a flip head of a flip module, flipping the first die with the flip module, removing the first die from the flip module after flipping the first die, inspecting the flip head of the flip module for contamination after removing the first die, cleaning the flip head with an in situ cleaning module after inspecting the flip head, and attaching a second die to the flip head after cleaning the flip head.

Abstract: A method and apparatus for bonding semiconductor devices are disclosed. In an embodiment, the method may include attaching a first die to a flip head of a flip module, flipping the first die with the flip module, removing the first die from the flip module after flipping the first die, inspecting the flip head of the flip module for contamination after removing the first die, cleaning the flip head with an in situ cleaning module after inspecting the flip head, and attaching a second die to the flip head after cleaning the flip head.

Abstract: A method and apparatus for bonding semiconductor devices are disclosed. In an embodiment, the method may include attaching a first die to a flip head of a flip module, flipping the first die with the flip module, removing the first die from the flip module after flipping the first die, inspecting the flip head of the flip module for contamination after removing the first die, cleaning the flip head with an in situ cleaning module after inspecting the flip head, and attaching a second die to the flip head after cleaning the flip head.

Abstract: A mold for press-molding glass elements is disclosed, which comprises a substrate and a protective film; wherein the protective film, being arranged on the substrate, is made of molybdenum-ruthenium (Mo—Ru) alloy instead of those precious metal alloys such as platinum-iridium (Pt—Ir) alloy, iridium-rhenium (Ir—Re) alloy and iridium- ruthenium (Ir—Ru) alloy, etc., being used as the protective film of prior-art molds. According, the mold of the invention can be manufactured at a comparatively lower cost while is capable of being used for press-molding glass elements of high precision and high softening point.