Patents by Inventor Yan-Chun Chen

Yan-Chun Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11948920
    Abstract: Provided are a semiconductor device and a method for manufacturing the same, and a semiconductor package. The semiconductor device includes a die stack and a cap substrate. The die stack includes a first die, second dies stacked on the first die, and a third die stacked on the second dies. The first die includes first through semiconductor vias. Each of the second dies include second through semiconductor vias. The third die includes third through semiconductor vias. The cap substrate is disposed on the third die of the die stack. A sum of a thickness of the third die and a thickness of the cap substrate ranges from about 50 ?m to about 80 ?m.
    Type: Grant
    Filed: August 30, 2021
    Date of Patent: April 2, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: I-Chun Hsu, Yan-Zuo Tsai, Chia-Yin Chen, Yang-Chih Hsueh, Yung-Chi Lin, Tsang-Jiuh Wu, Wen-Chih Chiou
  • Patent number: 11923886
    Abstract: An antenna device and a method for configuring the same are provided. The antenna device includes a grounding metal, a grounding part, a radiating part, a feeding part, a proximity sensor, and a sensing metal. The radiating part is electrically connected to the grounding metal through the grounding part. The feeding part is coupled to the grounding metal through a feeding point. The sensing metal is electrically connected to the proximity sensor. The sensing metal is separated from the radiating part at a distance. The distance is less than or equal to one thousandth of a wavelength corresponding to an operating frequency of the antenna device.
    Type: Grant
    Filed: August 27, 2021
    Date of Patent: March 5, 2024
    Assignee: COMPAL ELECTRONICS, INC.
    Inventors: Jhih-Ciang Chen, Shih-Chia Liu, Yen-Hao Yu, Li-Chun Lee, Yan-Ming Lin, Jui-Hung Lai
  • Patent number: 9785046
    Abstract: The present invention provides a pattern verifying method. First, a target pattern is decomposed into a first pattern and a second pattern. A first OPC process is performed for the first pattern to form a first revised pattern, and a second OPC process is performed for the second pattern to form a second revised pattern. An inspection process is performed, wherein the inspection process comprises an after mask inspection (AMI) process, which comprises considering the target pattern, the first pattern and the second pattern.
    Type: Grant
    Filed: January 21, 2015
    Date of Patent: October 10, 2017
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Te-Hsien Hsieh, Ming-Jui Chen, Cheng-Te Wang, Jing-Yi Lee, Jian-Yuan Ma, Yan-Chun Chen
  • Patent number: 9747404
    Abstract: A method for optimizing an integrated circuit layout design includes the following steps. A first integrated circuit layout design including a metal line feature having several metal lines and a second integrated circuit layout design including a hole feature having several holes are obtained. A line-end hole feature of the hole feature is selected by piecing the metal line feature with the hole feature. The line-end hole feature is classified into a single hole feature and a redundant hole feature by spacings between the adjacent holes by a computer system.
    Type: Grant
    Filed: July 23, 2015
    Date of Patent: August 29, 2017
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Shih-Ming Kuo, Ming-Jui Chen, Te-Hsien Hsieh, Ping-I Hsieh, Jing-Yi Lee, Yan-Chun Chen
  • Publication number: 20170024506
    Abstract: A method for optimizing an integrated circuit layout design includes the following steps. A first integrated circuit layout design including a metal line feature having several metal lines and a second integrated circuit layout design including a hole feature having several holes are obtained. A line-end hole feature of the hole feature is selected by piecing the metal line feature with the hole feature. The line-end hole feature is classified into a single hole feature and a redundant hole feature by spacings between the adjacent holes by a computer system.
    Type: Application
    Filed: July 23, 2015
    Publication date: January 26, 2017
    Inventors: Shih-Ming Kuo, Ming-Jui Chen, Te-Hsien Hsieh, Ping-I Hsieh, Jing-Yi Lee, Yan-Chun Chen
  • Publication number: 20160147140
    Abstract: The present invention provides a pattern verifying method. First, a target pattern is decomposed into a first pattern and a second pattern. A first OPC process is performed for the first pattern to form a first revised pattern, and a second OPC process is performed for the second pattern to form a second revised pattern. An inspection process is performed, wherein the inspection process comprises an after mask inspection (AMI) process, which comprises considering the target pattern, the first pattern and the second pattern.
    Type: Application
    Filed: January 21, 2015
    Publication date: May 26, 2016
    Inventors: Te-Hsien Hsieh, Ming-Jui Chen, Cheng-Te Wang, Jing-Yi Lee, Jian-Yuan Ma, Yan-Chun Chen