Abstract: A machine and its associated process for upset forging the ends of deformed reinforcement bars are disclosed. The machine includes 2 split clamping dies and an upsetting die, and they are housed in separate casings so that the clamping action is independent from the upsetting die. The clamping dies and the upsetting die form a continuous cavity for accommodating the forging of long bars. The upsetting die has a upsetting cavity with radial closed cross-section, and the whole forging process is performed inside this closed cavity to ensure it's a true closed-die forging process, which results in precise upset diameter with improved roundness of the rebar.

Abstract: The present disclosure provides a multifunctional electronic equipment cleaning storage box, which includes a box body, a first box cover, a second box cover, a rag, a large cleaning sweep, and small cleaning sweep, an end of the box body defines a accommodating groove having an opening facing forward, the first box cover and the second box cover, being openable and closable, are disposed on the box body, in closed state, the first box cover and the second box cover are respectively enclosed with the box body to form a first accommodating cavity and a second accommodating cavity, and the first box cover defines a card slot for a mobile phone to be inserted for supporting and positioning.

Abstract: The present disclosure provides a multifunctional electronic equipment cleaning storage box, which includes a a box body, a first box cover, a second box cover, a rag, a large cleaning sweep, and small cleaning sweep, an end of the box body defines a accommodating groove having an opening facing forward, the first box cover and the second box cover, being openable and closable, are disposed on the box body, in closed state, the first box cover and the second box cover are respectively enclosed with the box body to form a first accommodating cavity and a second accommodating cavity, and the first box cover defines a card slot for a mobile phone to be inserted for supporting and positioning.

Abstract: The present disclosure provides a blower cleaner. The blower cleaner includes a housing and a movement. The housing includes an installation cavity, an air inlet, and an air outlet. The air inlet and the air outlet are communicated with the installation cavity. The movement is arranged in the installation cavity and is arranged between the air inlet and the air outlet. An illuminating light is arranged in the housing. The illuminating light is arranged inside the installation cavity and directly faces the air outlet.

Abstract: The present disclosure provides a blower cleaner. The blower cleaner includes a housing and a movement. The housing includes an installation cavity, an air inlet, and an air outlet. The air inlet and the air outlet are communicated with the installation cavity. The movement is arranged in the installation cavity and is arranged between the air inlet and the air outlet. An illuminating light is arranged in the housing. The illuminating light is arranged inside the installation cavity and directly faces the air outlet.

Abstract: The present invention discloses a testing structure and method for interface trap density of gate oxide, relating to the field of quality and reliability researches of MOS devices. The present invention makes the interface traps density tests for gate oxide layers of n-type and p-type MOS devices completed on a same testing structure, this does not only shorten the measurement period by half but also decrease the costs for testing instruments, because the present testing method is based on a simple current-voltage scanning test without using equipments such as pulse generator required in conventional method. The testing results obtained according to the present invention are featured with spectral peak, which facilitates the data analysis and computation.

Abstract: The present invention discloses a testing structure and method for interface trap density of gate oxide, relating to the field of quality and reliability researches of MOS devices. The present invention makes the interface traps density tests for gate oxide layers of n-type and p-type MOS devices completed on a same testing structure, this does not only shorten the measurement period by half but also decrease the costs for testing instruments, because the present testing method is based on a simple current-voltage scanning test without using equipments such as pulse generator required in conventional method. The testing results obtained according to the present invention are featured with spectral peak, which facilitates the data analysis and computation.