Abstract: An optoelectronic device comprising two photovoltaic absorber materials of CdSeTe and perovskite and their functional component layers that are monolithically integrated into a bifacial tandem solar cell structure.

Abstract: Described herein is a diffusion-based ex-situ group V element doping method in the CdCl2 heat-treated polycrystalline CdTe film. The ex-situ doping using group V halides, such as PCl3, AsCl3, SbCl3, or BiCl3, demonstrated a promising PCE of ˜18% and long-term light soaking stability in CdSe/CdTe and CdS/CdTe devices with decent carrier concentration>1015 cm?3. This ex-situ solution or vapor process can provide a low-cost alternative pathway for effective doping of As, as well as P, Sb, and Bi, in CdTe solar cells with limited deviation from the current CdTe manufacturing process.

Abstract: Described herein is a diffusion-based ex-situ group V element doping method in the CdCl2 heat-treated polycrystalline CdTe film. The ex-situ doping using group V halides, such as PCl3, AsCl3, SbCl3, or BiCl3, demonstrated a promising PCE of ˜18% and long-term light soaking stability in CdSe/CdTe and CdS/CdTe devices with decent carrier concentration>1015 cm?3. This ex-situ solution or vapor process can provide a low-cost alternative pathway for effective doping of As, as well as P, Sb, and Bi, in CdTe solar cells with limited deviation from the current CdTe manufacturing process.

Abstract: Materials and methods for improving the stability of perovskites are described.

Abstract: A system and a process for forming a semi-conductor device, and solar cells (10) formed thereby. The process includes preparing a substrate (12) for deposition of a junction layer (14); forming the junction layer (14) on the substrate (12) using hot wire chemical vapor deposition; and, finishing the semi-conductor device.

Abstract: A system and a process for forming a semi-conductor device, and solar cells (10) formed thereby. The process includes preparing a substrate (12) for deposition of a junction layer (14); forming the junction layer (14) on the substrate (12) using hot wire chemical vapor deposition; and, finishing the semi-conductor device.

Abstract: In a method of making a c-Si-based cell or a ?c-Si-based cell, the improvement of increasing the minority charge carrier's lifetime, comprising: a) placing a c-Si or polysilicon wafer into CVD reaction chamber under a low vacuum condition and subjecting the substrate of the wafer to heating; and b) passing mixing gases comprising NH3/H2 through the reaction chamber at a low vacuum pressure for a sufficient time and at a sufficient flow rate to enable growth of an a-Si:H layer sufficient to increase the lifetime of the c-Si or polysilicon cell beyond that of the growth of an a-Si:H layer without treatment of the wafer with NH3/H2.

Abstract: A method for producing transparent p-type conducting oxide films without co-doping plasma enhancement or high temperature comprising: a) introducing a dialkyl metal at ambient temperature and a saturated pressure in a carrier gas into a low pressure deposition chamber, and b) introducing NO alone or with an oxidizer into the chamber under an environment sufficient to produce a metal-rich condition to enable NO decomposition and atomic nitrogen incorporation into the formed transparent metal conducting oxide.

Abstract: A method for producing transparent p-type conducting oxide films without co-doping plasma enhancement or high temperature comprising: a) introducing a dialkyl metal at ambient temperature and a saturated pressure in a carrier gas into a low pressure deposition chamber, and b) introducing NO alone or with an oxidizer into the chamber under an environment sufficient to produce a metal-rich condition to enable NO decomposition and atomic nitrogen incorporation into the formed transparent metal conducting oxide.

Abstract: In a method of making a c-Si-based cell or a ?c-Si-based cell, the improvement of increasing the minority charge carrier's lifetime, comprising: a) placing a c-Si or polysilicon wafer into CVD reaction chamber under a low vacuum condition and subjecting the substrate of the wafer to heating; and b) passing mixing gases comprising NH3/H2 through the reaction chamber at a low vacuum pressure for a sufficient time and at a sufficient flow rate to enable growth of an a-Si:H layer sufficient to increase the lifetime of the c-Si or polysilicon cell beyond that of the growth of an a-Si:H layer without treatment of the wafer with NH3/H2.

Abstract: A p-type transparent conducting oxide film is provided which is consisting essentially of, the transparent conducting oxide and a molecular doping source, the oxide and doping source grown under conditions sufficient to deliver the doping source intact onto the oxide.

Abstract: A p-type transparent conducting oxide film is provided which is consisting essentially of, the transparent conducting oxide and a molecular doping source, the oxide and doping source grown under conditions sufficient to deliver the doping source intact onto the oxide.