Abstract: Disclosed herein are methods of treatment comprising administering a therapeutically effective amount of a myosin modulator or a pharmaceutically acceptable salt thereof to a subject in need thereof and diagnostic methods useful in connection with those treatments. Due to observations unfolding in clinical trials with mavacamten and with mavacamten and other myosin inhibitors in the pre-clinical setting, new insights into how myosin inhibitors can be used beneficially to impact the disease state of HCM and other diseases are provided herein.

Abstract: The present disclosure discloses a method for manufacturing a semi-floating gate transistor. Self-aligned etching is performed by using an SIN protection layer of a control gate structure to form a vertical contact window, instead of the photolithography and etching of conventional lateral contact window, thus omitting one contact window photolithography process, avoiding the formation of an asymmetric semi-floating gate device due to the deterioration of the photolithography pattern overlay of the lateral contact window, and greatly improving the uniformity and the process window of the semi-floating gate transistor. In addition, since the physical distance between the vertical contact window and the gate of the tunnel field-effect transistor of the semi-floating gate transistor is significantly shortened, the tunneling efficiency is high, thus improving the charging speed of the semi-floating gate polysilicon.

Abstract: The present application discloses a semi-floating gate transistor, and a storage unit includes semi-floating gate trenches formed in selected areas of a plurality of first active areas arranged in parallel. Semi-floating gate conductive material layers are filled in the semi-floating gate trenches and extend outside the semi-floating gate trenches. Semi-floating gate split trenches are formed at tops of first field oxides, and fully isolate, by cutting, the semi-floating gate conductive material layers at both sides. Control gate dielectric layers and control gate conductive material layers are formed at the first sides and second sides, and top surfaces of the semi-floating gate conductive material layers, and the control gate conductive material layers also completely fills the semi-floating gate split trenches at both sides of the wrapped semi-floating gate conductive material layers. The present application also discloses a method of manufacturing a semi-floating gate transistor.

Abstract: Provided are a control method for a battery heating system, a battery heating system, and an electric vehicle. The battery heating system includes a supercapacitor and a pulse control unit. The control method includes: obtaining a temperature value and an SOC value of a power battery; and issuing a heating instruction to the pulse control unit when the temperature value is lower than a predetermined temperature threshold and the SOC value is higher than a predetermined charge threshold, to allow the pulse control unit to control, based on the heating instruction, bi-directional energy flow between the power battery and the supercapacitor by means of a pulse current, to heat the power battery.

Abstract: Disclosed herein are methods of treatment comprising administering a therapeutically effective amount of a myosin modulator or a pharmaceutically acceptable salt thereof to a subject in need thereof and diagnostic methods useful in connection with those treatments. Due to observations unfolding in clinical trials with mavacamten and with mavacamten and other myosin inhibitors in the pre-clinical setting, new insights into how myosin inhibitors can be used beneficially to impact the disease state of HCM and other diseases are provided herein.

Abstract: Provided are a silicon-on-insulator structure having bipolar stress and a manufacturing method therefor. The manufacturing method comprises providing a composite substrate, wherein the composite substrate has a silicon substrate layer, a buried oxide layer and a silicon-on-insulator layer sequentially from bottom to top, epitaxially growing a silicon germanium layer on an upper surface of the silicon-on-insulator layer; depositing a hard mask layer to cover a portion of the silicon germanium layer corresponding to an N-type MOS transistor region; depositing a surface oxide layer to cover the silicon germanium layer and the hard mask layer; performing a high temperature annealing treatment so that a portion of the silicon-on-insulator layer corresponding to a P-type MOS transistor region is converted into a silicon-germanium-on-insulator layer, and the portion corresponding to the N-type MOS transistor region is converted into a tensile stress silicon-on-insulator layer.

Abstract: Provided are a silicon-on-insulator structure having bipolar stress and a manufacturing method therefor. The manufacturing method comprises providing a composite substrate, wherein the composite substrate has a silicon substrate layer, a buried oxide layer and a silicon-on-insulator layer sequentially from bottom to top, epitaxially growing a silicon germanium layer on an upper surface of the silicon-on-insulator layer; depositing a hard mask layer to cover a portion of the silicon germanium layer corresponding to an N-type MOS transistor region; depositing a surface oxide layer to cover the silicon germanium layer and the hard mask layer; performing a high temperature annealing treatment so that a portion of the silicon-on-insulator layer corresponding to a P-type MOS transistor region is converted into a silicon-germanium-on-insulator layer, and the portion corresponding to the N-type MOS transistor region is converted into a tensile stress silicon-on-insulator layer.

Abstract: The present invention provides a method for treating osteoarthritis in a mammal, comprising administering to a mammal in need thereof, an effective amount of a compound of Formula (I) or a pharmaceutically acceptable salt or solvate thereof.