Abstract: Disclosed herein are methods of treatment comprising administering a therapeutically effective amount of a myosin modulator or a pharmaceutically acceptable salt thereof to a subject in need thereof and diagnostic methods useful in connection with those treatments. Due to observations unfolding in clinical trials with mavacamten and with mavacamten and other myosin inhibitors in the pre-clinical setting, new insights into how myosin inhibitors can be used beneficially to impact the disease state of HCM and other diseases are provided herein.

Abstract: Provided are a silicon-on-insulator structure having bipolar stress and a manufacturing method therefor. The manufacturing method comprises providing a composite substrate, wherein the composite substrate has a silicon substrate layer, a buried oxide layer and a silicon-on-insulator layer sequentially from bottom to top, epitaxially growing a silicon germanium layer on an upper surface of the silicon-on-insulator layer; depositing a hard mask layer to cover a portion of the silicon germanium layer corresponding to an N-type MOS transistor region; depositing a surface oxide layer to cover the silicon germanium layer and the hard mask layer; performing a high temperature annealing treatment so that a portion of the silicon-on-insulator layer corresponding to a P-type MOS transistor region is converted into a silicon-germanium-on-insulator layer, and the portion corresponding to the N-type MOS transistor region is converted into a tensile stress silicon-on-insulator layer.

Abstract: Provided are a silicon-on-insulator structure having bipolar stress and a manufacturing method therefor. The manufacturing method comprises providing a composite substrate, wherein the composite substrate has a silicon substrate layer, a buried oxide layer and a silicon-on-insulator layer sequentially from bottom to top, epitaxially growing a silicon germanium layer on an upper surface of the silicon-on-insulator layer; depositing a hard mask layer to cover a portion of the silicon germanium layer corresponding to an N-type MOS transistor region; depositing a surface oxide layer to cover the silicon germanium layer and the hard mask layer; performing a high temperature annealing treatment so that a portion of the silicon-on-insulator layer corresponding to a P-type MOS transistor region is converted into a silicon-germanium-on-insulator layer, and the portion corresponding to the N-type MOS transistor region is converted into a tensile stress silicon-on-insulator layer.

Abstract: The present invention provides a method for treating osteoarthritis in a mammal, comprising administering to a mammal in need thereof, an effective amount of a compound of Formula (I) or a pharmaceutically acceptable salt or solvate thereof.