Patents by Inventor Yanfei WAN

Yanfei WAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11386820
    Abstract: A method of detecting threshold voltage shift and a threshold voltage shift detection device are provided. The method is applied to a pixel driving circuit which I is electrically coupled to a control line, a voltage line and a detection node, respectively. The method includes: in a detection cycle including a setting phase and a detection phase, in the setting phase, controlling a transistor included in the pixel driving circuit to be in a biased state; in the detection phase, providing a preset control voltage signal to the control line, providing a preset voltage signal to the voltage line, and determining a threshold voltage shift state of the transistor according to an electric potential of the detection node.
    Type: Grant
    Filed: April 21, 2020
    Date of Patent: July 12, 2022
    Assignees: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Guangyao Li, Dongfang Wang, Jun Wang, Haitao Wang, Chaowei Hao, Bo Feng, Rong Liu, Wei Cai, Biao Luo, Xuechao Sun, Xuehai Gui, Qibin Liang, Yanfei Wan, Jin Su
  • Publication number: 20210241664
    Abstract: A method of detecting threshold voltage shift and a threshold voltage shift detection device are provided. The method is applied to a pixel driving circuit which I is electrically coupled to a control line, a voltage line and a detection node, respectively. The method includes: in a detection cycle including a setting phase and a detection phase, in the setting phase, controlling a transistor included in the pixel driving circuit to be in a biased state; in the detection phase, providing a preset control voltage signal to the control line, providing a preset voltage signal to the voltage line, and determining a threshold voltage shift state of the transistor according to an electric potential of the detection node.
    Type: Application
    Filed: April 21, 2020
    Publication date: August 5, 2021
    Inventors: Guangyao LI, Dongfang WANG, Jun WANG, Haitao WANG, Chaowei HAO, Bo FENG, Rong LIU, Wei CAI, Biao LUO, Xuechao SUN, Xuehai GUI, Qibin LIANG, Yanfei WAN, Jin SU