Abstract: A display panel and a display module are provided. The display panel includes a first base, a black matrix layer, and a color resist layer, wherein the black matrix layer includes a plurality of openings, the color resist layer is disposed above the first base and filled in the plurality of openings. A light reflectivity of a side of the black matrix layer away from the first base is greater than a light reflectivity of a side of the black matrix layer close to the first base.

Abstract: A display panel, a manufacturing method thereof, and a display device are provided. The display panel includes a driving substrate, a first light-emitting device layer disposed on a side of the driving substrate, and a second light-emitting device layer disposed on a side the driving substrate away from the first light-emitting device layer. The first light-emitting device layer includes a plurality of first light-emitting devices. The second light-emitting device layer includes a plurality of second light-emitting devices. The driving substrate includes a plurality of driving thin-film transistors. A driving thin-film transistor is connected to a first light-emitting device and a second light-emitting device. The first light-emitting device layer and the second light-emitting device layer are respectively disposed on two sides of the driving substrate.

Abstract: A display panel and a manufacturing method thereof, and an electronic terminal are provided and including a driving circuit layer, a planarization layer, an electrode layer, and a light-emitting layer which are stacked from bottom to top. The driving circuit layer includes driving circuits. The planarization layer includes first planarization portions and second planarization portions which are arranged in a same layer. The electrode layer includes electrode groups. The light-emitting layer includes light-emitting devices. The first planarization portion is disposed on a side of the driving circuit close to the electrode layer, and the second planarization portion is disposed on a side of one of the electrode group close to the driving circuit layer. A thickness of the second planarization portion is greater than a thickness of the first planarization portion.

Abstract: The invention relates to the technical field of nuclear reactor materials, in particular to a processing method for improving the corrosion resistance of iron and steel materials in lead or lead-bismuth, comprising the following steps: selecting iron and steel materials containing Mn and Cr elements, using high-energy fast neutrons generated by fission as the radiation source, and performing irradiation on the iron and steel material so that Mn and Cr elements diffuse to the surface of the iron and steel material to form a dense oxide film, so as to complete the improvement of the corrosion resistance of the iron and steel material. The invention enhances the formation of the dense-structured oxide layer by irradiation. The oxide layer has good protection and self-healing properties in irradiation environment, and a new solution is proposed for enhancing the corrosion resistance of steel in lead and lead-bismuth coolant fast reactors.

Abstract: Disclosed herein are compositions and methods for programming a cell. The compositions include a substrate and a cell adhesion agent. The substrate includes a surface having a micropatterned object and the cell adhesion agent is immobilized within a first area defined by the micropatterned object.