Abstract: A semiconductor processing system configured for performing concurrent epitaxial deposition of material layers is disclosed. The system includes a process module with a first and second chamber body, each having upper and lower walls extending between injection and exhaust chamber flanges. The gas delivery system comprises sources of gas and additional gas, with gas conduits fluidly coupled to the chamber bodies. A gas manifold with input and output conduits directs the additional gas to the chamber bodies, controlled by flow controllers. The chamber bodies are laterally separated and positioned adjacent to each other on either side of a central plane, facilitating efficient concurrent deposition processes.

Abstract: A process module configured for performing concurrent epitaxial deposition of material layers is disclosed. The module comprises a common chamber housing with two chamber bodies disposed within it. Each chamber body includes a ceramic weldment with upper and lower walls, injection and exhaust chamber flanges, and exhaust flanges with inner and outer sealing surfaces. Cover plates form seals with the outer sealing surfaces of the exhaust flanges. The module also features pressure cylinders with pistons that apply compressive forces between the exhaust and injection chamber flanges. A semiconductor processing system including such process modules are also disclosed.

Abstract: A method of operating a reactor system to provide multi-zone substrate temperature control. The method includes, with a first pyrometer, sensing a temperature of a first zone of a substrate supported in the reactor system, and, with a second pyrometer, sensing a temperature of a second zone of the substrate. The method further includes, with a controller, comparing the temperatures of the first and second zones to setpoint temperatures for the first and second zones and, in response, generating control signals to control heating of the substrate. The method also includes controlling, based on the control signals, operations of a heater assembly operating to heat the substrate.

Abstract: A method of operating a reactor system to provide multi-zone substrate temperature control. The method includes, with a first pyrometer, sensing a temperature of a first zone of a substrate supported in the reactor system, and, with a second pyrometer, sensing a temperature of a second zone of the substrate. The method further includes, with a controller, comparing the temperatures of the first and second zones to setpoint temperatures for the first and second zones and, in response, generating control signals to control heating of the substrate. The method also includes controlling, based on the control signals, operations of a heater assembly operating to heat the substrate.

Abstract: A chamber arrangement includes a chamber body having a chamber body with an injection end and a longitudinally opposite exhaust end, a substrate support arranged within the chamber body and supported for rotation therein rotation about a rotation axis, and an upper reflector supported above the chamber body and defining therein a laterally-outer first arcuate recess and a laterally-outer second arcuate recess. The laterally-outer first arcuate recess is separated from the rotation axis by a first arcuate recess lateral offset, the laterally outer second arcuate recess separated from the rotation axis by a second arcuate recess lateral offset, and the second arcuate recess lateral offset greater than or less than the first arcuate recess lateral offset. Semiconductor processing systems and material layer deposition methods are also described.

Abstract: A method of forming a semiconductor structure is provided. The method includes seating a substrate in a first chamber of a semiconductor processing system, depositing a first layer pair overlaying the substrate while the substrate is seated in the first chamber of the semiconductor processing system, and removing the substrate from the first chamber. The substrate is transferred to a second chamber coupled to the first chamber of the semiconductor processing system, seated in the second chamber of the semiconductor processing system, and a second layer pair deposited on the substrate while the substrate is seated in the second chamber such that the second layer pair overlays the first layer pair. Semiconductor structures and semiconductor processing systems are also described.

Abstract: A chamber arrangement includes a chamber body having a substrate support arranged therein to seat thereon a substrate during deposition of a material layer onto the substrate, an upper heater element array supported above the chamber body and configured to heat the substrate, and an upper pyrometer supported above the chamber body and operably coupled to the upper heater element array to acquire a substrate temperature measurement of the substrate. A lower heater element array is supported below the chamber body to heat the substrate support and a lower pyrometer is supported below the chamber body and configured to acquire a non-contact substrate support temperature measurement. Semiconductor processing systems, material layer deposition methods, and computer program products are also described.

Abstract: A method of forming a structure is provided. The method includes supporting a substrate within a reaction chamber of a semiconductor processing system, flowing a silicon precursor and a germanium precursor into the reaction chamber, and forming a silicon-germanium layer overlaying the substrate with the silicon containing precursor and the germanium precursor. Concentration of the germanium precursor within the reaction chamber is increased during the forming of the silicon-germanium layer overlaying the substrate. Methods of forming film stack structures, semiconductor device structures, and semiconductor processing systems are also described.

Abstract: A method of forming a structure is provided. The method includes supporting a substrate within a reaction chamber of a semiconductor processing system, flowing a silicon precursor and a germanium precursor into the reaction chamber, and forming a silicon-germanium layer overlaying the substrate with the silicon containing precursor and the germanium precursor. Concentration of the germanium precursor within the reaction chamber is increased during the forming of the silicon-germanium layer overlaying the substrate. Methods of forming film stack structures, semiconductor device structures, and semiconductor processing systems are also described.

Abstract: A method of forming a silicon germanium layer on a surface of a substrate and a system for forming a silicon germanium layer are disclosed. Examples of the disclosure provide a method that includes providing a plurality of growth precursors to control and/or promote parasitic gas-phase and surface reactions, such that greater control of the film (e.g., thickness and/or composition) uniformity can be realized.

Abstract: Methods and apparatuses for a material layer deposition method in a semiconductor manufacturing system. A controller may seat a substrate on a substrate support. A silicon-containing material layer precursor may be provided to a remote plasma unit, which may decompose at least a portion of the silicon-containing material layer precursor. An epitaxial material layer comprising silicon may be deposited onto the substrate using a decomposition product. The deposition rate and/or growth rate may be increased at a given deposition temperature.

Abstract: A method of forming a silicon germanium layer on a surface of a substrate and a system for forming a silicon germanium layer are disclosed. Examples of the disclosure provide a method that includes providing a plurality of growth precursors to control and/or promote parasitic gas-phase and surface reactions, such that greater control of the film (e.g., thickness and/or composition) uniformity can be realized.

Abstract: A method of forming structure includes providing a substrate in a reaction chamber, forming a first layer overlaying the substrate, and forming a second layer onto the first layer. Temperature of the first layer is controlled during the forming of the first layer using infrared electromagnetic radiation emitted by the first layer. Temperature of the second layer is controlled during the forming of the second layer using infrared electromagnetic radiation emitted by the second layer. Semiconductor device structures and semiconductor processing systems are also described.

Abstract: Methods for forming semiconductor stacked structures are disclosed. The methods may include, seating a substrate within a chamber body, and regulating a temperature profile across an upper surface of the substrate during each individual step of a sequential deposition process. Semiconductor stacked structures including two or more bilayers of SiGe/Si with intervening interface layers are also disclosed.

Abstract: Methods for forming multilayer structures are disclosed. The methods may include, seating a substrate within a chamber body, and regulating a temperature profile across an upper surface of the substrate during each individual deposition phase of multiphase deposition process. Semiconductor device structures including multilayer structures are also disclosed.

Abstract: A material layer deposition method includes supporting one and only one substrate in a chamber arrangement, exposing the substrate to a first material layer precursor and a second material layer precursor, and forming a first material layer overlaying the substrate using the first material layer precursor and the second material layer precursor. The first material layer is exposed to the first material layer to the first material layer precursor and a second material layer formed onto the first material layer using the first material layer precursor. The second material layer precursor includes a germanium-containing material layer precursor and the first material layer precursor includes at least one of trisilane (Si3H8) and tetrasilane (Si4H10). Material layer stacks, semiconductor processing systems, and computer program products are also described.

Abstract: A method of forming structure includes providing a substrate in a reaction chamber, forming a first layer overlaying the substrate, and forming a second layer onto the first layer. Temperature of the first layer is controlled during the forming of the first layer using infrared electromagnetic radiation emitted by the first layer. Temperature of the second layer is controlled during the forming of the second layer using infrared electromagnetic radiation emitted by the second layer. Semiconductor device structures and semiconductor processing systems are also described.

Abstract: A chamber arrangement has a chamber body with upper and lower walls. A substrate support is arranged within an interior of the chamber body and supported for rotation about a rotation axis. An upper heater element array is supported above the upper wall and a lower heater element array supported below the lower wall. A pyrometer is supported above the upper heater element array, is optically coupled to the interior of the chamber body, and is operably connected to the upper heater element array. A thermocouple is arranged within the interior of the chamber body, is in intimate mechanical contact with the substrate support, and is operably connected to the lower heater element array. Semiconductor processing systems and material layer deposition methods are also described.

Abstract: Methods, systems, and assemblies suitable for gas-phase processes are disclosed. An exemplary assembly includes a susceptor ring and at least one injector tube. The injector tube can be disposed within the susceptor ring to provide a gas to a lower chamber area of a reactor. Methods, systems, and assemblies can be used to obtain desired etching and purging of the lower chamber area.

Abstract: A method of forming structure includes providing a substrate in a reaction chamber, forming a first layer overlaying the substrate, and forming a second layer onto the first layer. Temperature of the first layer is controlled during the forming of the first layer using infrared electromagnetic radiation emitted by the first layer. Temperature of the second layer is controlled during the forming of the second layer using infrared electromagnetic radiation emitted by the second layer. Semiconductor device structures and semiconductor processing systems are also described.