Abstract: A semiconductor device, including: interlayer insulating patterns and conductive patterns alternately stacked on a substrate; a channel structure passing through the interlayer insulating patterns and the conductive patterns; and tapered patterns interposed between the channel structure and the interlayer insulating patterns, spaced apart with any one of the conductive patterns interposed therebetween, and having widths decreased toward the substrate.

Abstract: Provided are a polishing composition for chemical mechanical polishing, a method of preparing the polishing composition, and a chemical mechanical polishing method using the polishing composition. The polishing composition which is a water-based polishing composition for planarizing a metal compound thin film including two or more metal elements includes nano-diamond particles as a polishing material and poly(sodium 4-styrenesulfonate) as a dispersion stabilizer for the nano-diamond particles in the polishing composition. Since the nano-diamond particles in the polishing composition have hydrophobic surfaces and poly(sodium 4-styrenesulfonate) effectively stabilizes the nano-diamond particles to prevent the nano-diamond particles from aggregating, excellent polishing characteristics for the metal compound thin film may be obtained due to the nano-diamond particles which have a nano size, high hardness, and excellent dispersibility.

Abstract: A method of manufacturing a semiconductor device includes forming isolation layers in a first direction at trenches at isolation regions defined at a semiconductor substrate and forming gate lines in a second direction crossing the first direction over the isolation layers and active regions defined between the isolation layers, performing a dry-etch process to remove the isolation layers, and forming an insulating layer over the semiconductor substrate to form a first air gap extending in the first direction in the trenches and a second air gap extending in the second direction between the gate lines.

Abstract: A separator for a fuel cell and a method for manufacturing the same comprise two sheets of metal plates integrally formed to minimize contact resistance between an upper metal plate and a lower metal plate. The method for manufacturing the separator includes steps of preparing an upper metal plate and a lower metal plate, each plate having opposing main sides, and applying a coating liquid containing a polymer composite material on both sides of the upper and lower metal plates, to form first and second composite material layers on both sides of the upper plates and third and fourth composite material layers on both sides of the lower plates. The method further includes stacking the upper metal plate on the lower metal plate, before drying the respective composite material layers, and integrally bonding the second composite material layer and the third composite material layer to form a single intermediate composite material layer.

Abstract: A semiconductor device, including: interlayer insulating patterns and conductive patterns alternately stacked on a substrate; a channel structure passing through the interlayer insulating patterns and the conductive patterns; and tapered patterns interposed between the channel structure and the interlayer insulating patterns, spaced apart with any one of the conductive patterns interposed therebetween, and having widths decreased toward the substrate.

Abstract: A method of manufacturing a semiconductor device includes forming isolation layers in a first direction at trenches at isolation regions defined at a semiconductor substrate and forming gate lines in a second direction crossing the first direction over the isolation layers and active regions defined between the isolation layers, performing a dry-etch process to remove the isolation layers, and forming an insulating layer over the semiconductor substrate to form a first air gap extending in the first direction in the trenches and a second air gap extending in the second direction between the gate lines.

Abstract: A method of manufacturing a semiconductor device includes forming isolation layers in a first direction at trenches at isolation regions defined at a semiconductor substrate and forming gate lines in a second direction crossing the first direction over the isolation layers and active regions defined between the isolation layers, performing a dry-etch process to remove the isolation layers, and forming an insulating layer over the semiconductor substrate to form a first air gap extending in the first direction in the trenches and a second air gap extending in the second direction between the gate lines.

Abstract: A polishing slurry for a chemical mechanical planarization process includes polishing particles and polyhedral nanoscale particles having a smaller size than the polishing particles and including a bond of silicon (Si) and oxygen (O).

Abstract: A separator for a fuel cell and a method for manufacturing the same comprise two sheets of metal plates integrally formed to minimize contact resistance between an upper metal plate and a lower metal plate. The method for manufacturing the separator includes steps of preparing an upper metal plate and a lower metal plate, each plate having opposing main sides, and applying a coating liquid containing a polymer composite material on both sides of the upper and lower metal plates, to form first and second composite material layers on both sides of the upper plates and third and fourth composite material layers on both sides of the lower plates. The method further includes stacking the upper metal plate on the lower metal plate, before drying the respective composite material layers, and integrally bonding the second composite material layer and the third composite material layer to form a single intermediate composite material layer.

Abstract: A method of manufacturing a semiconductor device includes forming isolation layers in a first direction at trenches at isolation regions defined at a semiconductor substrate and forming gate lines in a second direction crossing the first direction over the isolation layers and active regions defined between the isolation layers, performing a dry-etch process to remove the isolation layers, and forming an insulating layer over the semiconductor substrate to form a first air gap extending in the first direction in the trenches and a second air gap extending in the second direction between the gate lines.

Abstract: Provided are a polishing composition for chemical mechanical polishing, a method of preparing the polishing composition, and a chemical mechanical polishing method using the polishing composition. The polishing composition which is a water-based polishing composition for planarizing a metal compound thin film including two or more metal elements includes nano-diamond particles as a polishing material and poly(sodium 4-styrenesulfonate) as a dispersion stabilizer for the nano-diamond particles in the polishing composition. Since the nano-diamond particles in the polishing composition have hydrophobic surfaces and poly(sodium 4-styrenesulfonate) effectively stabilizes the nano-diamond particles to prevent the nano-diamond particles from aggregating, excellent polishing characteristics for the metal compound thin film may be obtained due to the nano-diamond particles which have a nano size, high hardness, and excellent dispersibility.

Abstract: A separator of fuel cells and a method for fabricating the same are disclosed. The separator includes a metal substrate, a carbon nanotube layer formed on the metal substrate by growing carbon nanotubes thereon, and a composite layer formed by coating a mixture of an electrically conductive additive and a polymer on the surface of the metal substrate by compression-molding, screen coating, dipping or tape casting, thereby preventing corrosion of the metal substrate while achieving a reduction in contact resistance which can generally be deteriorated when composites are coated on the metal substrate.