Abstract: In a method of manufacturing a semiconductor device, an n-type source/drain epitaxial layer and a p-type source/drain epitaxial layer respectively formed, a dielectric layer is formed over the n-type source/drain epitaxial layer and the p-type source/drain epitaxial layer, a first opening is formed in the dielectric layer to expose a part of the n-type source/drain epitaxial layer and a second opening is formed in the dielectric layer to expose a part of the p-type source/drain epitaxial layer, and the n-type source/drain epitaxial layer and the p-type source/drain epitaxial layer respectively recessed. A recessing amount of the n-type source/drain epitaxial layer is different from a recessing amount of the p-type source/drain epitaxial layer.

Abstract: An improved anti-skid chain structure is equipped with a plurality of chain units that are arranged in parallel around a tire. The chain units are coupled together end to end on each side of the tire by a plurality of connection bars and a plurality of two-ended hooks and coupling members. A locking member mounted to the connection bars is used to lock the chain to the tire and a tightening member secured to the connection bars disposed on one side of the tire firmly secures the chain to the tire during use.