Patents by Inventor Yang-Chou Lin

Yang-Chou Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METAL INTERCONNECT STRUCTURE AND METHOD FOR FABRICATING THE SAME
    Publication number: 20250079237
    Abstract: A metal interconnect structure includes a first metal interconnection in an inter-metal dielectric (IMD) layer on a substrate, a second metal interconnection on the first metal interconnection, and a cap layer between the first metal interconnection and the second metal interconnection. Preferably, a top surface of the first metal interconnection is even with a top surface of the IMD layer and the cap layer is made of conductive material.
    Type: Application
    Filed: November 18, 2024
    Publication date: March 6, 2025
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Yi-How Chou, Tzu-Hao Fu, Tsung-Yin Hsieh, Chih-Sheng Chang, Shih-Chun Tsai, Kun-Chen Ho, Yang-Chou Lin
  • Metal interconnect structure having cap layer with different thicknesses and method for fabricating the same
    Patent number: 12183626
    Abstract: A metal interconnect structure includes a first metal interconnection in an inter-metal dielectric (IMD) layer on a substrate, a second metal interconnection on the first metal interconnection, and a cap layer between the first metal interconnection and the second metal interconnection. Preferably, a top surface of the first metal interconnection is even with a top surface of the IMD layer and the cap layer is made of conductive material.
    Type: Grant
    Filed: August 9, 2022
    Date of Patent: December 31, 2024
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Yi-How Chou, Tzu-Hao Fu, Tsung-Yin Hsieh, Chih-Sheng Chang, Shih-Chun Tsai, Kun-Chen Ho, Yang-Chou Lin
  • METAL INTERCONNECT STRUCTURE AND METHOD FOR FABRICATING THE SAME
    Publication number: 20220384254
    Abstract: A metal interconnect structure includes a first metal interconnection in an inter-metal dielectric (IMD) layer on a substrate, a second metal interconnection on the first metal interconnection, and a cap layer between the first metal interconnection and the second metal interconnection. Preferably, a top surface of the first metal interconnection is even with a top surface of the IMD layer and the cap layer is made of conductive material.
    Type: Application
    Filed: August 9, 2022
    Publication date: December 1, 2022
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Yi-How Chou, Tzu-Hao Fu, Tsung-Yin Hsieh, Chih-Sheng Chang, Shih-Chun Tsai, Kun-Chen Ho, Yang-Chou Lin
  • Metal interconnect structure and method for fabricating the same
    Patent number: 11450558
    Abstract: A method for fabricating metal interconnect structure includes the steps of: forming a first metal interconnection in a first inter-metal dielectric (IMD) layer on a substrate; forming a cap layer on the first metal interconnection; forming a second IMD layer on the cap layer; performing a first etching process to remove part of the second IMD layer for forming an opening; performing a plasma treatment process; and performing a second etching process to remove polymers from bottom of the opening.
    Type: Grant
    Filed: August 12, 2020
    Date of Patent: September 20, 2022
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Yi-How Chou, Tzu-Hao Fu, Tsung-Yin Hsieh, Chih-Sheng Chang, Shih-Chun Tsai, Kun-Chen Ho, Yang-Chou Lin
  • METAL INTERCONNECT STRUCTURE AND METHOD FOR FABRICATING THE SAME
    Publication number: 20200373198
    Abstract: A method for fabricating metal interconnect structure includes the steps of: forming a first metal interconnection in a first inter-metal dielectric (IMD) layer on a substrate; forming a cap layer on the first metal interconnection; forming a second IMD layer on the cap layer; performing a first etching process to remove part of the second IMD layer for forming an opening; performing a plasma treatment process; and performing a second etching process to remove polymers from bottom of the opening.
    Type: Application
    Filed: August 12, 2020
    Publication date: November 26, 2020
    Inventors: Yi-How Chou, Tzu-Hao Fu, Tsung-Yin Hsieh, Chih-Sheng Chang, Shih-Chun Tsai, Kun-Chen Ho, Yang-Chou Lin
  • Metal interconnect structure and method for fabricating the same
    Patent number: 10784153
    Abstract: A method for fabricating metal interconnect structure includes the steps of: forming a first metal interconnection in a first inter-metal dielectric (IMD) layer on a substrate; forming a cap layer on the first metal interconnection; forming a second IMD layer on the cap layer; performing a first etching process to remove part of the second IMD layer for forming an opening; performing a plasma treatment process; and performing a second etching process to remove polymers from bottom of the opening.
    Type: Grant
    Filed: September 18, 2018
    Date of Patent: September 22, 2020
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Yi-How Chou, Tzu-Hao Fu, Tsung-Yin Hsieh, Chih-Sheng Chang, Shih-Chun Tsai, Kun-Chen Ho, Yang-Chou Lin
  • METAL INTERCONNECT STRUCTURE AND METHOD FOR FABRICATING THE SAME
    Publication number: 20200058544
    Abstract: A method for fabricating metal interconnect structure includes the steps of: forming a first metal interconnection in a first inter-metal dielectric (IMD) layer on a substrate; forming a cap layer on the first metal interconnection; forming a second IMD layer on the cap layer; performing a first etching process to remove part of the second IMD layer for forming an opening; performing a plasma treatment process; and performing a second etching process to remove polymers from bottom of the opening.
    Type: Application
    Filed: September 18, 2018
    Publication date: February 20, 2020
    Inventors: Yi-How Chou, Tzu-Hao Fu, Tsung-Yin Hsieh, Chih-Sheng Chang, Shih-Chun Tsai, Kun-Chen Ho, Yang-Chou Lin