Patents by Inventor Yang Chung-Heng

Yang Chung-Heng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7256093
    Abstract: A method of forming a device (and the device so formed) comprising the following steps. A structure having a gate structure formed thereover is provided. Respective low doped drains are formed within the structure at least adjacent to the gate structure. A pocket implant is formed within the structure. The structure adjacent the gate structure is etched to form respective trenches having exposed side walls. Respective first liner structures are formed at least over the exposed side walls of trenches. Respective second liner structures are formed over the first liner structures. Source/drain implants are formed adjacent to, and outboard of, second liner structures to complete formation of device.
    Type: Grant
    Filed: October 11, 2005
    Date of Patent: August 14, 2007
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chiu Hung Yu, Yang Chung-Heng, Wu Lin-June
  • Publication number: 20060027866
    Abstract: A method of forming a device (and the device so formed) comprising the following steps. A structure having a gate structure formed thereover is provided. Respective low doped drains are formed within the structure at least adjacent to the gate structure. A pocket implant is formed within the structure. The structure adjacent the gate structure is etched to form respective trenches having exposed side walls. Respective first liner structures are formed at least over the exposed side walls of trenches. Respective second liner structures are formed over the first liner structures. Source/drain implants are formed adjacent to, and outboard of, second liner structures to complete formation of device.
    Type: Application
    Filed: October 11, 2005
    Publication date: February 9, 2006
    Inventors: Chiu-Hung Yu, Yang Chung-Heng, Wu Lin-June
  • Patent number: 6975000
    Abstract: A method of forming a device (and the device so formed) comprising the following steps. A structure having a gate structure formed thereover is provided. Respective low doped drains are formed within the structure at least adjacent to the gate structure. A pocket implant is formed within the structure. The structure adjacent the gate structure is etched to form respective trenches having exposed side walls. Respective first liner structures are formed at least over the exposed side walls of trenches. Respective second liner structures are formed over the first liner structures. Source/drain implants are formed adjacent to, and outboard of, second liner structures to complete formation of device.
    Type: Grant
    Filed: April 8, 2004
    Date of Patent: December 13, 2005
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Chiu-Hung Yu, Yang Chung-Heng, Wu Lin-June
  • Publication number: 20050224873
    Abstract: A method of forming a device (and the device so formed) comprising the following steps. A structure having a gate structure formed thereover is provided. Respective low doped drains are formed within the structure at least adjacent to the gate structure. A pocket implant is formed within the structure. The structure adjacent the gate structure is etched to form respective trenches having exposed side walls. Respective first liner structures are formed at least over the exposed side walls of trenches. Respective second liner structures are formed over the first liner structures. Source/drain implants are formed adjacent to, and outboard of, second liner structures to complete formation of device.
    Type: Application
    Filed: April 8, 2004
    Publication date: October 13, 2005
    Inventors: Chiu-Hung Yu, Yang Chung-Heng, Wu Lin-June