Abstract: The present disclosure provides a method of and an apparatus for authenticating a fingerprint, a smart terminal and a computer storage medium. The method includes: storing a binding relationship between first user fingerprint information and user authentication information into a safe storage area of a smart terminal in advance, collecting second user fingerprint information during an authentication of a user identity; matching the second user fingerprint information with the first user fingerprint information in the safe storage area, determining the user authentication information corresponding to the first user fingerprint information matched with the second user fingerprint information; sending the user authentication information to a server to authenticate the user identity.

Abstract: In an embodiment, a silicone coating composition, comprises a coating matrix comprising a partial condensate of a silanol of the formula RnSi(OH)4-n, where n equals 1 or 2, and wherein R is selected from a C1-3 alkyl radical, a vinyl radical, a 3,3,3-trifluoropropyl radical, a gamma-glycidoxypropyl radical, and a gamma-methacryloxypropyl radical; and ITO having a mean particle size of less than or equal to 60 nm as determined by dynamic light scattering; and wherein the silicone coating composition is free of colloidal silica. In another embodiment, a coated glazing, comprises a plastic substrate; and a cured silicone coating on the substrate.

Abstract: In an embodiment, a silicone coating composition, comprises a coating matrix, comprising the partial condensate of a silanol of the formula RnSi(OH)4?n, where n equals 1 or 2, and wherein R is selected from a C1-3 alkyl radical, a vinyl radical, a 3,3,3-trifluoropropyl radical, a gamma-glycidoxypropyl radical, and a gamma-methacryloxypropyl radical; colloidal silica; and ITO having a mean particle size of less than or equal to 60 nm as determined by dynamic light scattering. In another embodiment, a coated glazing, comprises a plastic substrate; and a cured silicone coating on the substrate; wherein the coated glazing has a haze of less than or equal to 3% as measured in accordance with ASTM D1003-11, procedure A with CIE standard illuminant C.

Abstract: In an embodiment, a method for making an infrared radiation absorbing coating comprises: forming an ITO coating mixture comprising ITO and a first coating matrix, wherein the first coating matrix comprises the partial condensate of a silanol of the formula RnSi(OH)4-n, where n equals 1 or 2, and wherein R is selected from a C1-3 alkyl radical, a vinyl radical, a 3,3,3-trifluoropropyl radical, a gamma-glycidoxypropyl radical, and a gamma-methacryloxypropyl radical, wherein the ITO coating mixture is free of colloidal silica; forming a colloidal silica coating mixture comprising colloidal silica and a second coating matrix, wherein the second coating matrix comprises the partial condensate of a silanol of the formula RnSi(OH)4-n, where n equals 1 or 2, and wherein R is selected from an alkyl radical of 1 to 3 inclusive carbon atoms, a vinyl radical, a 3,3,3-trifluoropropyl radical, a gamma-glycidoxypropyl radical, and a gamma-methacryloxypropyl radical; and mixing the ITO coating mixture with the colloidal sili

Abstract: Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.

Abstract: Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.

Abstract: Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.

Abstract: Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.

Abstract: Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.

Abstract: Various embodiments of the present invention are generally directed to an apparatus and method for low temperature physical vapor deposition (PVD) of an amorphous thin film layer of material onto a substrate. A PVD chamber is configured to support a substrate and has a cathode target with a layer of sputtering material thereon, an anode shield, and a magnetron assembly adjacent the target. A high impulse power magnetron sputtering (HiPIMS) power supply is coupled to the PVD chamber, the power supply having a charging circuit and a charge storage device. The power supply applies relatively high energy, low duty cycle pulses to the magnetron assembly to sputter, via self ionizing plasma, relatively low energy ions from the layer of sputtering material to deposit an amorphous thin film layer onto the substrate.

Abstract: Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.

Abstract: A new cellulose excipient, OCCAE, suitable for use as a binder, filler, and/or disintegrant in the development of solid dosage forms and as a bodying agent or a drug carrier in the preparation of topical formulations is described. The cellulose excipient is formed by reacting an oxidized cellulose ester with an alcohol in the presence of a catalyst. The invention also describes the formation of controlled release microspheres using OCCAE and/or oxidized cellulose esters that may be used to control the release of drug in a patient over a time period of several hours to several days.

Abstract: The present invention relates to the preparation of a series of oxidized cellulose esters suitable for use as a drug carrier in the development of biodegradable controlled and/or sustained release pharmaceutical, agricultural, and veterinary compositions, such as films, compacts, microspheres, and pellets. The esters are prepared by acylation of oxidized cellulose having at least 3% carboxyl groups. The resulting oxidized cellulose esters are soluble in aqueous alkaline solutions, water, and a variety of organic solvents.

Abstract: A moisture diversion system is provided for a collapsible structure including a collapsible frame assembly and an outer structure coupled to the collapsible frame assembly. The moisture diversion system includes a guide strip coupled at each of a first edge and an opposing second edge to the outer structure. The guide strip defines a channel between the first edge and the second edge for facilitating diverting moisture from the outer structure.

Abstract: The present invention relates to the preparation of a series of oxidized cellulose esters suitable for use as a drug carrier in the development of biodegradable controlled and/or sustained release pharmaceutical, agricultural, and veterinary compositions, such as films, compacts, microspheres, and pellets. The esters are prepared by acylation of oxidized cellulose having at least 3% carboxyl groups. The resulting oxidized cellulose esters are soluble in aqueous alkaline solutions, water, and a variety of organic solvents.

Abstract: A new cellulose excipient, OCCAE, suitable for use as a binder, filler, and/or disintegrant in the development of solid dosage forms and as a bodying agent or a drug carrier in the preparation of topical formulations is described. The cellulose excipient is formed by reacting an oxidized cellulose ester with an alcohol in the presence of a catalyst. The invention also describes the formation of controlled release microspheres using OCCAE and/or oxidized cellulose esters that may be used to control the release of drug in a patient over a time period of several hours to several days.

Abstract: The present invention relates to the preparation of a series of oxidized cellulose esters suitable for use as a drug carrier in the development of biodegradable controlled and/or sustained release pharmaceutical, agricultural, and veterinary compositions, such as films, compacts, microspheres, and pellets. The esters are prepared by acylation of oxidized cellulose having at least 3% carboxyl groups. The resulting oxidized cellulose esters are soluble in aqueous alkaline solutions, water, and a variety of organic solvents.

Abstract: An extended horizon adaptive block predictive controller includes a block control system and an adaptive block prediction system. The subject adaptive block prediction system includes means and procedures for accomplishing a block of k output predictions, consisting of output predictions at each future time step up to the prediction horizon k, for dynamic systems with N outputs, M inputs and model parameter order n. The prediction system is organized for performing the calculation of a k-step ahead predictor in a highly computationally and memory efficient manner. The subject prediction system, in particular, avoids computation of a large number of the predictor parameters associated with the prior art Diophantine equation method, so that memory requirements and computational complexity are significantly reduced. The subject block control system in conjunction with an adaptive block prediction system includes means for accomplishing predictive controls of dynamic systems.