Abstract: The present disclosure provides a light emitting diode structure. The light emitting diode structure includes a substrate, a first light emitting structure on the substrate, a second light emitting structure on the substrate, and a third light emitting structure on the substrate. The first light emitting structure includes a first light emitting diode and a first focusing optic on the first light emitting diode. The second light emitting structure includes a second light emitting diode and a second focusing optic on the second light emitting diode. The third light emitting structure includes a third light emitting diode and a third focusing optic on the third light emitting diode. The first light emitting structure, the second light emitting structure and the third light emitting structure are arranged along a first direction and are dislocated in a second direction perpendicular to the first direction.

Abstract: A micro-LED display includes a first LED subpixel, a second LED subpixel, a third LED subpixel and a fourth LED subpixel. The first LED subpixel is configured to emit a red light. The second LED subpixel is configured to emit a green light. The third LED subpixel is configured to emit a blue light. The fourth LED subpixel is configured to emit a yellow light, in which the yellow light emitted by the fourth LED subpixel has a peak wavelength that satisfies ?p,Yellow,lower_limit<?p. ?p,Yellow,lower_limit is a lower limit of the peak wavelength of the yellow light, ?p is the peak wavelength of the yellow light.

Abstract: A display device and a driving method thereof are provided. The display device includes a display panel, a controller, and a driver. The display panel includes a plurality of light-emitting elements. The controller receives characteristic information of the light-emitting elements, and obtains a first relationship curve between current density information and luminous efficiency information according to the characteristic information. The controller obtains a second relationship curve between duty cycle information and accumulated current consumption information or accumulated power consumption information according to the first relationship curve. The controller finds a selected duty cycle corresponding to a maximum luminous efficiency according to the second relationship curve. The driver activates the light-emitting elements according to the selected duty cycle.

Abstract: A fabrication method of a display device includes the following steps: providing a light-emitting diode (LED) display device including an circuit substrate, first LEDs, and a second LED; detecting the LED display device, wherein the second LED cannot emit light normally; removing the second LED from the circuit substrate; providing a LED substrate; transferring a third LED of the LED substrate to a first transferring substrate; transferring the third LED on the first transferring substrate to a second transferring substrate; and electrically connecting the third LED on the second transposed substrate to the circuit substrate.

Abstract: A display apparatus, including a circuit substrate, a driving unit and a light-emitting unit is provided. The driving unit is disposed on the circuit substrate. The light-emitting unit is disposed on the circuit substrate. A thickness of the driving unit is substantially the same as a thickness of the light-emitting unit.

Abstract: A watermark embedding method includes the following steps. The input video signal is received by a processing circuit. Grayscale information of a watermark signal is generated by the processing circuit according to a time series data and a predetermined plane. During a dark sate and a bright state in each of a plurality of consecutive periods, phases of the time series data are opposite and integral values of the grayscales of the predetermined plane are the same. The processing circuit embeds the watermark signal into the input video signal to generate an output video signal with the watermark information. The display panel displays an image according to the output video signal.

Abstract: A sensing device includes a first substrate, a first sensing element, a first light-shielding layer, a second light-shielding layer and an insulating layer. The first sensing element is disposed on the first substrate. The first light-shielding layer is disposed on the first sensing element and has a first opening, wherein the first opening is completely overlapped with the first sensing element. The second light-shielding layer is disposed on the first light-shielding layer and includes an upper light-shielding part and a lateral light-shielding part, wherein the upper light-shielding part is overlapped with the first light-shielding layer and has a second opening, and the lateral light-shielding part is separated from the upper light-shielding part. The insulating layer is disposed between the first light-shielding layer and the second light-shielding layer, and the lateral light-shielding part covers a sidewall of the insulating layer.

Abstract: The present disclosure provides a watermark embedding method including following steps. Values of predetermined grayscale program are respectively multiplied by a value of time series data to generate grayscale information of a watermark signal. In a first time period and a second time period included in each of continuous cycles, phases of the time series data are opposite and averages values of the predetermined grayscale program are the same, and a sum of the grayscale information of the watermark signal in the first time period and the second time period is zero. The watermark signal is embedded into a first local dimming signal by the processing circuit to generate a second local dimming signal to control light intensities of local dimming zones according to the second local dimming data with the watermark information.

Abstract: A light-emitting diode element includes a first-type semiconductor layer, a second-type semiconductor layer, an active layer, an insulating layer, a first electrode, a second electrode, a first passivation layer, a first seed layer, a first electroplating layer, a first solder and second solder. The insulating layer covers a sidewall of the first-type semiconductor layer, a sidewall of the second-type semiconductor layer and a sidewall of the active layer. The first passivation layer covers a portion of the insulating layer on the sidewall of the first-type semiconductor layer, the sidewall of the second-type semiconductor layer and the sidewall of the active layer. The first seed layer is disposed on the first passivation layer. The first electroplating layer is disposed on the first seed layer. The first solder and the second solder are electrically connected to a first conductive pattern and a second conductive pattern of the first electroplating layer.

Abstract: A sensing device includes a first substrate, a first sensing element, a first light-shielding layer, a second light-shielding layer and an insulating layer. The first sensing element is disposed on the first substrate. The first light-shielding layer is disposed on the first sensing element and has a first opening, wherein the first opening is completely overlapped with the first sensing element. The second light-shielding layer is disposed on the first light-shielding layer and includes an upper light-shielding part and a lateral light-shielding part, wherein the upper light-shielding part is overlapped with the first light-shielding layer and has a second opening, and the lateral light-shielding part is separated from the upper light-shielding part. The insulating layer is disposed between the first light-shielding layer and the second light-shielding layer, and the lateral light-shielding part covers a sidewall of the insulating layer.

Abstract: A sensing device, including a first substrate, a first sensing element, a light-emitting element, and a light-shielding layer, is provided. The first sensing element is located on the first substrate. The light-emitting element is located on the first sensing element. The light-shielding layer is located between the light-emitting element and the first sensing element, and is electrically connected to the light-emitting element.

Abstract: A display device and a driving method thereof are provided. The display device includes a display panel, a controller, and a driver. The display panel includes a plurality of light-emitting elements. The controller receives characteristic information of the light-emitting elements, and obtains a first relationship curve between current density information and luminous efficiency information according to the characteristic information. The controller obtains a second relationship curve between duty cycle information and accumulated current consumption information or accumulated power consumption information according to the first relationship curve. The controller finds a selected duty cycle corresponding to a maximum luminous efficiency according to the second relationship curve. The driver activates the light-emitting elements according to the selected duty cycle.

Abstract: A display device includes a circuit board and a plurality of light-emitting units disposed on the circuit board. The circuit board includes a substrate and a plurality of signal lines disposed on the substrate. Each light-emitting unit includes a base board, at least one light-emitting element and a driving circuit layer. The light-emitting element is between the base board and the substrate. The driving circuit layer is between the light-emitting element and the base board, and electrically connected to the light-emitting element and the signal line.

Abstract: A display panel includes a pixel array substrate, a plurality of vertical light emitting devices and a flip-chip light emitting device. The pixel array substrate has a first pixel area and a second pixel area. The vertical light emitting devices are disposed in the first pixel area and the second pixel area and electrically connected to the pixel array substrate. The flip-chip light emitting device is disposed in the second pixel area and electrically connected to the pixel array substrate. A color of an emitted light beam of the flip-chip light emitting device and a color of an emitted light beam of one of the vertical light emitting devices located in the first pixel area are identical.

Abstract: A display device includes a circuit board and a plurality of light-emitting units disposed on the circuit board. The circuit board includes a substrate and a plurality of signal lines disposed on the substrate. Each light-emitting unit includes a base board, at least one light-emitting element and a driving circuit layer. The light-emitting element is between the base board and the substrate. The driving circuit layer is between the light-emitting element and the base board, and electrically connected to the light-emitting element and the signal line.

Abstract: The present disclosure provides a semiconductor device, including a buffer layer, a first sub-chip and a second sub-chip, and a connecting element. The first sub-chip and the second sub-chip are separately arranged on the buffer layer. Each of the first sub-chip and the second sub-chip includes a first diffusion layer, an active layer, and a second diffusion layer. The first diffusion layer, the active layer, and the second diffusion layer are sequentially arranged on the buffer layer in a top-down approach. The first diffusion layer and the buffer layer are first-type epitaxial layers, and the second diffusion layer is a second-type epitaxial layer. The connecting element is configured to couple the second diffusion layer of the first sub-chip and the first diffusion layer of the second sub-chip.

Abstract: The present disclosure provides a light emitting diode component, including a body and a plurality of P-N diode structures. The P-N diode structures are coupled in series and integrated on the body. The P-N diode structures include a plurality of p-type doping layers and a plurality of n-type doping layers. The p-type doping layer of a first P-N diode structure in the P-N diode structures is electrically coupled to the n-type doping layer of a second P-N diode structure in the P-N diode structures.

Abstract: A display apparatus, including a circuit substrate, a driving unit and a light-emitting unit is provided. The driving unit is disposed on the circuit substrate. The light-emitting unit is disposed on the circuit substrate. A thickness of the driving unit is substantially the same as a thickness of the light-emitting unit.

Abstract: A fabrication method of a display device includes the following steps: providing a light-emitting diode (LED) display device including an circuit substrate, first LEDs, and a second LED; detecting the LED display device, wherein the second LED cannot emit light normally; removing the second LED from the circuit substrate; providing a LED substrate; transferring a third LED of the LED substrate to a first transferring substrate; transferring the third LED on the first transferring substrate to a second transferring substrate; and electrically connecting the third LED on the second transposed substrate to the circuit substrate.

Abstract: A display device includes a circuit substrate and a light-emitting diode. Two electrodes of the light-emitting diode are connected to two pads of the circuit substrate. Each electrode of the light-emitting diode includes a first conductive layer, a barrier layer, and a metal layer. The first conductive layer is connected to a semiconductor stack layer of the light-emitting diode. The barrier layer is electrically connected to the semiconductor stack layer of the light-emitting diode through the first conductive layer. The adhesion of the material selected for the first conductive layer to the semiconductor stack layer is greater than the adhesion of the material selected for the barrier layer to the semiconductor stack layer. The metal layer electrically connects the barrier layer to the corresponding one of the pads. The melting point of the metal layer is lower than 260 degrees Celsius.