Abstract: A light-emitting device and a light bulb having the light-emitting device are disclosed. The light-emitting device includes a power supply unit having a first electrode and a second electrode and outputting a current signal, an impedance unit having a first end and a second end; a first light-emitting module forwardly coupled to the first electrode and reversely coupled to the first end; a second light-emitting module forwardly coupled to the second electrode and reversely coupled to the first end; a third light-emitting module reversely coupled to the first electrode and forwardly coupled to the second end; and a fourth light-emitting module reversely coupled to the second electrode and forwardly coupled to the second end.

Abstract: An organic electroluminescent material is shown in the following general formula (1), {[M(L)(H2O)x].(H2O)y}n??General Formula (1) wherein x is between 1 and 4, y is between 1 and 8, and n is a positive integer. M is any one selected from the group consisting of beryllium (Be), strontium (Sr), and radium (Ra). L is an organic ligand containing a naphthalene group and an anhydride group. M and L form metal-organic frameworks. An organic electroluminescent device containing the organic electroluminescent material is also disclosed.

Abstract: An organic electroluminescent material is shown in the following general formula (1), {[M(L)(H2O)x].(H2O)y}n??General Formula (1) wherein x is between 1 and 4, y is between 1 and 8, and n is a positive integer. M is any one selected from the group consisting of beryllium (Be), strontium (Sr), and radium (Ra). L is an organic ligand containing a naphthalene group and an anhydride group. M and L form metal-organic frameworks. An organic electroluminescent device containing the organic electroluminescent material is also disclosed.

Abstract: The invention provides an inorganic light emitting memory, comprising resistive memory in tandem with inorganic light emitting element. It is ready to be extended into many other material systems for practical applications. In view of the unique features demonstrated by the integration of light emitters and memories, the inorganic light emitting memory may open up a new route for the development of integrated optoelectronic devices, optical communication, digital memories and recordable display panels and the likes.

Abstract: The present invention relates to a flexible and stretchable graphene film, comprising a graphene layer and a functional layer formed on the graphene layer; a preparing method of the graphene film. The present invention further relates to a method of producing a graphene film, comprising: (a) providing a carrier, and a graphene layer is formed on the surface of the carrier, (b) forming a functional layer containing an insulating polymer and a conductive material on a top portion of the graphene film; and (c) dissolving the carrier by an etchant. Without harsh synthesis and complicated fabrication steps, the graphene film of the present invention is able to transfer onto various substrates, and is largely beneficial to various electronic applications.

Abstract: An electrode structure is disposed on a substrate of a solar cell. The electrode structure includes a plurality of bus electrodes, a plurality of finger electrodes, and at least one connection electrode. The bus electrodes are separately disposed on the substrate. The finger electrodes are disposed on two sides of the bus electrodes and electrically connect to the bus electrodes. The connection electrode is disposed on a side of the substrate and connects with at least two finger electrodes. The connection electrode, bus electrodes and the finger electrodes are formed by at least two screen printing processes, and at least one of the screen printing processes does not form the bus electrodes. Thus, the thicknesses of the finger electrodes are greater than those of the bus electrodes.

Abstract: An electrode structure for a solar cell is disposed on a substrate of the solar cell and includes a plurality of bus electrodes and finger electrodes. The bus electrodes are formed by separately disposing a conductive material on the substrate. The finger electrodes are formed by separately disposing a conductive material on the substrate and at two sides of the bus electrodes. The bus electrodes and the finger electrodes are formed by two screen printing processes. The bottom portion of the finger electrodes are formed by a first screen printing process, and the top portion of the finger electrodes and the bus electrodes are formed by a second screen printing process. The electrode structure can enhance the conductivity of electrodes and increase the reliability and yield of the solar cell, thereby achieving the purposes of increasing the photo-electro transition efficiency of the solar cell and decreasing the manufacturing cost.

Abstract: An electrode structure is disposed on a substrate of a solar cell. The electrode structure includes a plurality of bus electrodes and a plurality of finger electrodes. The bus electrodes are separately disposed on the substrate. The finger electrodes are disposed on two sides of the bus electrodes and electrically connect to the bus electrodes. The bus electrodes and the finger electrodes are formed by at least two screen printing processes, and at least one of the screen printing processes does not form the bus electrodes. Thus, the thicknesses of the finger electrodes are greater than those of the bus electrodes.

Abstract: A fluorescent material of Formula (I) is provided. In Formula (I), all the variables thereof are described in the specification. The invention also provides a solar cell with the disclosed fluorescent material. The solar cell with the fluorescent material includes a solar cell and a fluorescent layer including the disclosed fluorescent material of Formula (I) coating on the solar cell.

Abstract: The present invention discloses a positive and negative dual function magnetic resist lithography method. At first, a substrate coated with a positive and negative dual function magnetic resist layer is provided. The positive and negative dual function magnetic resist layer comprises a manganese(Mn)-containing precursor and at least one hydrophilic polymer. Next, at least one exposure procedure for the positive and negative dual function magnetic resist layer is performed to form either a positive resist or a negative resist. In addition, after the at least one exposure procedure, a developing procedure using water-soluble developer is performed.

Abstract: The present invention discloses a positive and negative dual function magnetic resist lithography method. At first, a substrate coated with a positive and negative dual function magnetic resist layer is provided. The positive and negative dual function magnetic resist layer comprises a manganese(Mn)-containing precursor and at least one hydrophilic polymer. Next, at least one exposure procedure for the positive and negative dual function magnetic resist layer is performed to form either a positive resist or a negative resist. In addition, after the at least one exposure procedure, a developing procedure using water-soluble developer is performed.

Abstract: The present invention provides a novel crystalline material Si.sub.x C.sub.y N.sub.z possessing a direct optical band gap of 3.8 eV. Many optoelectronic applications, such as blue light emitting diode and laser diode, may utilize this property.