Patents by Inventor Yang-Han Yoon

Yang-Han Yoon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7846850
    Abstract: A method for fabricating an insulation layer includes forming an insulation layer over a nitride layer using a silicon source and a phosphorus source, wherein the insulation layer includes a first insulation layer contacting the nitride layer and a second insulation layer formed on the first insulation layer, wherein the first insulation layer is formed using a higher flow rate of the silicon source and a lower flow rate of the phosphorus source than used with the second insulation layer.
    Type: Grant
    Filed: December 30, 2008
    Date of Patent: December 7, 2010
    Assignee: Hynix Semiconductor Inc.
    Inventor: Yang-Han Yoon
  • Publication number: 20100151668
    Abstract: A method for fabricating an insulation layer includes forming an insulation layer over a nitride layer using a silicon source and a phosphorus source, wherein the insulation layer includes a first insulation layer contacting the nitride layer and a second insulation layer formed on the first insulation layer, wherein the first insulation layer is formed using a higher flow rate of the silicon source and a lower flow rate of the phosphorus source than used with the second insulation layer.
    Type: Application
    Filed: December 30, 2008
    Publication date: June 17, 2010
    Applicant: HYNIX SEMICONDUCTOR INC.
    Inventor: Yang-Han YOON
  • Patent number: 7361598
    Abstract: Disclosed is a method for fabricating a semiconductor device capable of preventing scratches. The method includes the steps of: forming a substrate divided into a peripheral region and a cell region where a capacitor including a metal plate electrode on which particles with a pointed shape are generated is formed; forming an inter-layer insulation layer with a poor step coverage on the metal plate electrode, the particles with the pointed shape and a surface of the substrate in the peripheral region; etching a portion of the inter-layer insulation layer, thereby exposing predetermined portions of lateral sides of the particles with the pointed shape; selectively removing the exposed portions of the particles with the pointed shape to separate top portions of the particles with the pointed shape from the inter-layer insulation layer; and planarizing the inter-layer insulation layer through a chemical mechanical polishing (CMP) process.
    Type: Grant
    Filed: May 3, 2005
    Date of Patent: April 22, 2008
    Assignee: Hynix Semiconductor Inc.
    Inventor: Yang-Han Yoon
  • Publication number: 20060141788
    Abstract: Disclosed is a method for fabricating a semiconductor device capable of preventing scratches. The method includes the steps of: forming a substrate divided into a peripheral region and a cell region where a capacitor including a metal plate electrode on which particles with a pointed shape are generated is formed; forming an inter-layer insulation layer with a poor step coverage on the metal plate electrode, the particles with the pointed shape and a surface of the substrate in the peripheral region; etching a portion of the inter-layer insulation layer, thereby exposing predetermined portions of lateral sides of the particles with the pointed shape; selectively removing the exposed portions of the particles with the pointed shape to separate top portions of the particles with the pointed shape from the inter-layer insulation layer; and planarizing the inter-layer insulation layer through a chemical mechanical polishing (CMP) process.
    Type: Application
    Filed: May 3, 2005
    Publication date: June 29, 2006
    Inventor: Yang-Han Yoon