Publication number: 20250079795
Abstract: A low-divergence multi-junction VCSEL (100,200) includes a first reflector region (103,203) over a substrate (104,204), a second reflector region (102,202) over the first reflector region (103,203), active regions (101,105,106,107,201,205,206,207) between the first reflector region (103,203) and the second reflector region (102,202), an oxide aperture (115,215) and an implantation region (108,109,208,209) between the first reflector region (103,203) and the second reflector region (102,202), and a surface relief structure (112,117,212,217).
Type:
Application
Filed:
March 16, 2023
Publication date:
March 6, 2025
Applicant:
SHENZHEN RAYSEES AI TECHNOLOGY CO., LTD.
Inventors:
Jianyang Zhao, Siva Kumar Lanka, Yongxiang He, Yang Wang