Patents by Inventor Yang Jeong-hwan

Yang Jeong-hwan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Non-planar transistor having germanium channel region and method of manufacturing the same
    Publication number: 20080050865
    Abstract: Provided is a non-planar transistor with a multi-gate structure that includes a germanium channel region, and a method of manufacturing the same. The non-planar transistor includes a silicon body and a channel region that covers exposed surfaces of the silicon body. The channel region is formed of a germanium layer and includes a first channel region and a second channel region. In order to form the germanium channel region, a mesa type active region is formed on the substrate, and a germanium layer is formed to cover two sidewalls and an upper surface of the active region.
    Type: Application
    Filed: March 30, 2007
    Publication date: February 28, 2008
    Applicant: Samsung Electronics Co., Ltd.
    Inventor: Yang Jeong-hwan