Abstract: A method for fabricating a stack capacitor to be used for a highly integrated semiconductor device such as a DRAM of 64 mega grade or greater. Using the characteristic that a selective oxide film is likely to be deposited only over an oxide film and a good step coverage characteristic of polysilicon film, the stack capacitor is fabricated to have wing structures of a right 90.degree.-inverted U shape and a left 90.degree.-inverted U shape respectively at opposite ends of its storage electrode. These wing structures result in an increase in the surface area of the storage electrode.

Abstract: A process for forming self-aligned contact holes in a semiconductor device. In the process, a barrier layer for limiting an opened area of each contact hole is formed by use of a blanket etching process and a chemical vapor deposition process. This method eliminates the use of a mask patterning process upon formation of the selective metal layer to be used as the barrier layer, thereby minimizing the mask misalignment rate and the tolerance caused by the mask misalignment. By virtue of such features, the contact hole formation process enables formation of contact holes each having a minimum opened area enough to form a contact.

Abstract: The object of the present invention is to prevent the electrical short between the adjacent metal wires by forming metal wires alternately between insulation films and to improve the process margin in the lithography process and the etching process.The present invention alternately forms a plurality of metal wires between the insulation films by manufacturing the photomask for metal wires in two separate pieces to correspond to the photomask for general metal wires for forming a plurality of metal wires which are densely constituted, and by utilizing the two photomasks.