Patents by Inventor Yang Kai Fan
Yang Kai Fan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8871032Abstract: A semiconductor apparatus includes a first tank configured to accommodate a first fluid. A second tank is configured to receive overflow of the first fluid into an upper portion of the second tank and to accommodate a second fluid. A cycling system including a first conduit is configured between the first tank and the second tank. The first conduit has an end substantially below a surface of the second fluid. A fluid providing system including a second conduit is fluidly coupled to the second tank and configured to provide the second fluid into the second tank. The second conduit has an end substantially below the surface of the second fluid. An overflow system is coupled to the second tank and configured to remove an upper portion of the second fluid when the surface of the second fluid is substantially equal to or higher than a pre-determined level.Type: GrantFiled: June 6, 2013Date of Patent: October 28, 2014Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Kuang-Nian Tang, Yang-Kai Fan, Yu-Sheng Su, Ming-Tsao Chiang, Yu-Cheng Shih
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Publication number: 20130263900Abstract: A semiconductor apparatus includes a first tank configured to accommodate a first fluid. A second tank is configured to receive overflow of the first fluid into an upper portion of the second tank and to accommodate a second fluid. A cycling system including a first conduit is configured between the first tank and the second tank. The first conduit has an end substantially below a surface of the second fluid. A fluid providing system including a second conduit is fluidly coupled to the second tank and configured to provide the second fluid into the second tank. The second conduit has an end substantially below the surface of the second fluid. An overflow system is coupled to the second tank and configured to remove an upper portion of the second fluid when the surface of the second fluid is substantially equal to or higher than a pre-determined level.Type: ApplicationFiled: June 6, 2013Publication date: October 10, 2013Inventors: Kuang-Nian Tang, Yang- Kai Fan, Yu-Sheng Su, Ming-Tsao Chiang, Yu-Cheng Shih
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Patent number: 8460478Abstract: A semiconductor apparatus includes a first tank configured to accommodate a first fluid. A second tank is configured to receive overflow of the first fluid into an upper portion of the second tank and to accommodate a second fluid. A cycling system including a first conduit is configured between the first tank and the second tank. The first conduit has an end substantially below a surface of the second fluid. A fluid providing system including a second conduit is fluidly coupled to the second tank and configured to provide the second fluid into the second tank. The second conduit has an end substantially below the surface of the second fluid. An overflow system is coupled to the second tank and configured to remove an upper portion of the second fluid when the surface of the second fluid is substantially equal to or higher than a pre-determined level.Type: GrantFiled: May 29, 2007Date of Patent: June 11, 2013Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Kuang-Nian Tang, Yang-Kai Fan, Yu-Sheng Su, Ming-Tsao Chiang, Yu-Cheng Shih
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Publication number: 20100279438Abstract: An apparatus is provided that includes a load port for receiving a container that houses a wafer and a detector disposed proximate the load port such that the detector detects a metal characteristic of the wafer. The detected metal characteristic indicates whether the wafer is at a proper location. Also, provided is a method for use in semiconductor manufacture that includes providing a container that houses a wafer, receiving the container in a load port, detecting a metal characteristic of the wafer, and determining whether the wafer is at a proper location based on the detected metal characteristic of the wafer.Type: ApplicationFiled: May 1, 2009Publication date: November 4, 2010Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Su Chao An, Chih-Ming Wan, Bing-Chen Lin, Yang Kai Fan
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Publication number: 20080295874Abstract: A semiconductor apparatus includes a first tank configured to accommodate a first fluid. A second tank is configured to receive overflow of the first fluid into an upper portion of the second tank and to accommodate a second fluid. A cycling system including a first conduit is configured between the first tank and the second tank. The first conduit has an end substantially below a surface of the second fluid. A fluid providing system including a second conduit is fluidly coupled to the second tank and configured to provide the second fluid into the second tank. The second conduit has an end substantially below the surface of the second fluid. An overflow system is coupled to the second tank and configured to remove an upper portion of the second fluid when the surface of the second fluid is substantially equal to or higher than a pre-determined level.Type: ApplicationFiled: May 29, 2007Publication date: December 4, 2008Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Kuang-Nian Tang, Yang-Kai Fan, Yu-Sheng Su, Ming-Tsao Chiang, Yu-Cheng Shih
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Patent number: 7405165Abstract: A dual-tank etch method which is suitable for the stripping of a silicon nitride layer from a pad oxide layer provided on a substrate, and etching of the pad oxide layer to a desired target thickness, is disclosed. The method includes providing a first processing tank containing a silicon nitride-stripping chemical; stripping the silicon nitride layer from the pad oxide layer by placing the substrate in the first processing tank; providing a second processing tank containing an oxide-etching chemical; and etching the pad oxide layer to the desired target thickness by placing the substrate in the second processing tank. By carrying out the pad oxide-etching step and the silicon nitride-stripping step in separate processing tanks, accumulation of silicon oxide precipitates in the second processing tank is avoided.Type: GrantFiled: November 5, 2004Date of Patent: July 29, 2008Assignee: Taiwan Semiconductor Manufacturing Co, LtdInventors: Yang Kai Fan, Yong Rong Chang, Yi Song Chiu, Ping Yin Shin
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Publication number: 20040000375Abstract: A multi-layer insert ring for engaging a shadow ring in a plasma etch chamber which includes at least two layers stacked together in an opening of the shadow ring. The multi-layer insert ring may be constructed by two layers or three layers by utilizing ground, reprocessed insert rings resulting in significant cost savings. Each of the layers of the multi-layer insert rings has a planar top surface and a planar bottom surface that is parallel to the planar top surface. Only the top layer need to be replaced after repeated usage of the insert ring in plasma etching processes.Type: ApplicationFiled: June 27, 2002Publication date: January 1, 2004Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Hsiang-Hsing Liu, Chung-Feng Huang, Yang-Kai Fan, Kwang-Niang Tan, Wen-Chin Tseng