Patents by Inventor Yang Kim

Yang Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250101535
    Abstract: The present disclosure relates to an SNP marker set for dog identification and a dog identification method using the same. The present disclosure can accurately and easily readably identify individual dogs through the SNP markers on the gene and combinations of the SNPs based on the simple results of AA/AB/BB (Homozygote/Heterozygote/Homo mutant) by using 381 single nucleotide polymorphisms (SNPs) on the gene, thereby proving to be useful for animal individual identification.
    Type: Application
    Filed: March 6, 2024
    Publication date: March 27, 2025
    Applicant: MEDICLOUD CO., LTD.
    Inventors: Hyung Ki LEE, Hwan Jong KWAK, Byoung Yang KIM
  • Patent number: 12191386
    Abstract: A power semiconductor device includes a semiconductor layer of silicon carbide (SiC), at least one trench that extends in one direction, a gate insulating layer disposed on at least an inner wall of the at least one trench, at least one gate electrode layer disposed on the gate insulating layer, a drift region disposed in the semiconductor layer at least on one side of the at least one gate electrode layer, a well region disposed in the semiconductor layer to be deeper than the at least one gate electrode layer, a source region disposed in the well region, and at least one channel region disposed in the semiconductor layer of one side of the at least one gate electrode layer between the drift region and the source region.
    Type: Grant
    Filed: March 13, 2024
    Date of Patent: January 7, 2025
    Assignee: HYUNDAI MOBIS CO., LTD.
    Inventors: Jeong Mok Ha, Hyuk Woo, Sin A Kim, Tae Youp Kim, Ju Hwan Lee, Min Gi Kang, Tae Yang Kim
  • Publication number: 20240395928
    Abstract: A power semiconductor device includes a semiconductor layer of silicon carbide (SiC), at least one trench that extends in one direction, a gate insulating layer disposed on at least an inner wall of the at least one trench, at least one gate electrode layer disposed on the gate insulating layer, a drift region disposed in the semiconductor layer at least on one side of the at least one gate electrode layer, a well region disposed in the semiconductor layer to be deeper than the at least one gate electrode layer, a source region disposed in the well region, and at least one channel region disposed in the semiconductor layer of one side of the at least one gate electrode layer between the drift region and the source region.
    Type: Application
    Filed: August 2, 2024
    Publication date: November 28, 2024
    Applicant: HYUNDAI MOBIS CO., LTD.
    Inventors: Jeong Mok HA, Hyuk WOO, Sin A KIM, Tae Youp KIM, Ju Hwan LEE, Min Gi KANG, Tae Yang KIM
  • Publication number: 20240355547
    Abstract: A multilayer electronic component includes a body including a dielectric layer and an internal electrode; and an external electrode disposed on the body, wherein the dielectric layer includes a rare earth element, a secondary phase of the rare earth element and a dielectric grain, wherein, when an average thickness of the dielectric layer is defined as td and a maximum size of the dielectric layer of a secondary phase of the rare earth element in the thickness direction is defined as D, the dielectric layer includes two or more secondary phases of a rare earth element satisfying D/td?0.2.
    Type: Application
    Filed: August 7, 2023
    Publication date: October 24, 2024
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Seok Hyun YOON, Hyung Soon KWON, In Ho JEON, Byung Ho LEE, Mi Yang KIM
  • Publication number: 20240222497
    Abstract: A power semiconductor device includes a semiconductor layer of silicon carbide (SiC), at least one trench that extends in one direction, a gate insulating layer disposed on at least an inner wall of the at least one trench, at least one gate electrode layer disposed on the gate insulating layer, a drift region disposed in the semiconductor layer at least on one side of the at least one gate electrode layer, a well region disposed in the semiconductor layer to be deeper than the at least one gate electrode layer, a source region disposed in the well region, and at least one channel region disposed in the semiconductor layer of one side of the at least one gate electrode layer between the drift region and the source region.
    Type: Application
    Filed: March 13, 2024
    Publication date: July 4, 2024
    Applicant: HYUNDAI MOBIS CO., LTD.
    Inventors: Jeong Mok HA, Hyuk WOO, Sin A KIM, Tae Youp KIM, Ju Hwan LEE, Min Gi KANG, Tae Yang KIM
  • Publication number: 20240153705
    Abstract: A ceramic electronic component includes a body including a dielectric layer and an internal electrode disposed alternately with the dielectric layer; and an external electrode disposed on the body, wherein the dielectric layer includes a first region extending from an interfacial surface with the internal electrode to 50 nm of the dielectric layer in an inward direction and a second region excluding the first region, and wherein, in the first region, an average content of In based on overall elements excluding oxygen is 0.5 at % or more and 2.0 at % or less, and an average content of Sn based on overall elements excluding oxygen is 0.5 at % or more and 1.75 at % or less.
    Type: Application
    Filed: September 6, 2023
    Publication date: May 9, 2024
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: In Ho JEON, Seok Hyun YOON, Jin Woo KIM, Byung Kil YUN, Bon Hyeong KOO, Min Jung JANG, Mi Yang KIM
  • Patent number: 11975798
    Abstract: The present invention relates to a coupling-assist device for a bicycle crank arm, comprising: a main body open through upper and lower portions, the main body having a space formed to receive a crank arm to be inserted; a handle member extending from a lower portion of the main body; a support frame including a fixing part formed on a lower portion thereof and coupled with the upper portion of the main body, and a position adjusting hole that is open through to allow a tool to be passed therethrough and connected to the crank arm, wherein the position adjusting hole enables adjustment of position of the tool in up and down directions; and a support means.
    Type: Grant
    Filed: June 10, 2020
    Date of Patent: May 7, 2024
    Inventor: Tae Yang Kim
  • Patent number: 11967928
    Abstract: Proposed is a hybrid energy generation device using sunlight and solar heat including a photovoltaic panel in which a plurality of photovoltaic cells are arranged on a front side thereof, a first heat storage pipe having an inlet through which heat transfer fluid is introduced, and having a first slit hole formed on a side thereof in a longitudinal direction, a second heat storage pipe disposed to face the first heat storage pipe, having an outlet through which the heat transfer fluid is discharged, and having a second slit hole formed on a side thereof in a longitudinal direction, two or more third heat storage pipes arranged to connect the first heat storage pipe and the second heat storage pipe, and each having a third slit hole formed on a side thereof in a longitudinal direction, and a heat dissipation panel laminated on a back side of the PV panel.
    Type: Grant
    Filed: June 27, 2022
    Date of Patent: April 23, 2024
    Assignee: KUKDONG ENERGY Corp
    Inventors: Myeong Geon Sagong, Tae Yang Kim
  • Patent number: 11961903
    Abstract: A power semiconductor device includes a semiconductor layer of silicon carbide (SiC), at least one trench that extends in one direction, a gate insulating layer disposed on at least an inner wall of the at least one trench, at least one gate electrode layer disposed on the gate insulating layer, a drift region disposed in the semiconductor layer at least on one side of the at least one gate electrode layer, a well region disposed in the semiconductor layer to be deeper than the at least one gate electrode layer, a source region disposed in the well region, and at least one channel region disposed in the semiconductor layer of one side of the at least one gate electrode layer between the drift region and the source region.
    Type: Grant
    Filed: May 25, 2021
    Date of Patent: April 16, 2024
    Assignee: HYUNDAI MOBIS CO., LTD.
    Inventors: Jeong Mok Ha, Hyuk Woo, Sin A Kim, Tae Youp Kim, Ju Hwan Lee, Min Gi Kang, Tae Yang Kim
  • Publication number: 20240013978
    Abstract: A multilayer electronic component includes a body including a dielectric layer and an internal electrode; and an external electrode disposed on the body, wherein the dielectric layer includes a plurality of dielectric grains, and wherein the plurality of dielectric grains include one or more first dielectric grains in which a sum of lengths of defects in a dielectric grain is 150 nm or more.
    Type: Application
    Filed: February 22, 2023
    Publication date: January 11, 2024
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Seok Hyun Yoon, In Ho Jeon, Yun Jung Park, Jin Woo Kim, Mi Yang Kim, Se Yoon Park
  • Publication number: 20230343861
    Abstract: Disclosed is a power semiconductor device that includes a gate electrode recessed from a first surface of a semiconductor substrate to a second surface, disposed opposite to the first surface, of the semiconductor substrate, an emitter region, including impurities in a first conductive type, disposed in contact with a trench, in which the gate electrode is disposed, and the first surface, a collector region, including impurities in a second conductive type opposite to the first conductive type, disposed in contact with the second surface, a floating region, including the impurities in the second conductive type, extending toward the second surface in an extension direction of the trench while surrounding a bottom surface of the trench, and a trench emitter region interposed under the gate electrode in the trench.
    Type: Application
    Filed: December 28, 2022
    Publication date: October 26, 2023
    Applicant: HYUNDAI MOBIS CO., LTD.
    Inventors: Seon Hyeong JO, Hyuk WOO, Tae Young PARK, Ju Hwan LEE, Min Gi KANG, Seong Hwan YUN, Tae Yang KIM
  • Publication number: 20230343860
    Abstract: A power semiconductor device includes a plurality of gate electrodes configured to be recessed from a first surface of a semiconductor substrate to a second surface of the semiconductor substrate, the second surface being opposite to the first surface, an emitter region configured to make contact with a trench and the first surface, being provided between respective ones of the plurality of gate electrodes, and including impurities of a first conductive type, a collector region configured to make contact with the second surface, and including second impurities of a second conductive type opposite to the first conductive type, a floating region extending toward the second surface in an extension direction of the trench while surrounding a bottom surface of the trench, and including the second impurities, and a trench emitter region interposed between the plurality of gate electrodes in the trench.
    Type: Application
    Filed: December 27, 2022
    Publication date: October 26, 2023
    Applicant: HYUNDAI MOBIS CO., LTD.
    Inventors: Min Gi KANG, Hyuk WOO, Tae Young PARK, Ju Hwan LEE, Seon Hyeong JO, Seong Hwan YUN, Tae Yang KIM
  • Publication number: 20230103622
    Abstract: Proposed is a hybrid energy generation device using sunlight and solar heat including a photovoltaic panel in which a plurality of photovoltaic cells are arranged on a front side thereof, a first heat storage pipe having an inlet through which heat transfer fluid is introduced, and having a first slit hole formed on a side thereof in a longitudinal direction, a second heat storage pipe disposed to face the first heat storage pipe, having an outlet through which the heat transfer fluid is discharged, and having a second slit hole formed on a side thereof in a longitudinal direction, two or more third heat storage pipes arranged to connect the first heat storage pipe and the second heat storage pipe, and each having a third slit hole formed on a side thereof in a longitudinal direction, and a heat dissipation panel laminated on a back side of the PV panel.
    Type: Application
    Filed: June 27, 2022
    Publication date: April 6, 2023
    Applicant: KUKDONG ENERGY Corp
    Inventors: Myeong Geon SAGONG, Tae Yang KIM
  • Publication number: 20220315162
    Abstract: The present invention relates to a coupling-assist device for a bicycle crank arm, comprising: a main body open through upper and lower portions, the main body having a space formed to receive a crank arm to be inserted; a handle member extending from a lower portion of the main body; a support frame including a fixing part formed on a lower portion thereof and coupled with the upper portion of the main body, and a position adjusting hole that is open through to allow a tool to be passed therethrough and connected to the crank arm, wherein the position adjusting hole enables adjustment of position of the tool in up and down directions; and a support means.
    Type: Application
    Filed: June 10, 2020
    Publication date: October 6, 2022
    Inventor: Tae Yang KIM
  • Patent number: 11328868
    Abstract: A dielectric ceramic composition and a multilayer ceramic electronic component are provided, the dielectric ceramic composition includes a barium titanate base material main component and a subcomponent, a microstructure after sintering includes a first crystal grain including 3 or less domain boundaries and a second crystal grain including 4 or more domain boundaries, and an area ratio of the second crystal grain to the total crystal grains is 20% or less.
    Type: Grant
    Filed: September 18, 2019
    Date of Patent: May 10, 2022
    Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Seok Hyun Yoon, Mi Yang Kim, Jin Woo Kim, Dong Hun Kim, Jung Deok Park
  • Publication number: 20220073381
    Abstract: Proposed are a manufacturing method of a composite capacitive desalination electrode which can increase the desalination efficiency and as a new structure with more excellent mechanical and chemical resistance, and a composite capacitive desalination electrode and assembly. The manufacturing method includes the following steps: a) forming a composite microporous membrane by forming an ion exchange resin layer on a surface of the microporous membrane; and b) forming the composite microporous membrane prepared in the step a) on both sides of an electrode sheet, thereby producing a first unit including the composite microporous membrane and the electrode sheet. The steps are performed in a single process line by an in-line continuous process.
    Type: Application
    Filed: October 11, 2019
    Publication date: March 10, 2022
    Inventors: Kyung Seok KANG, Won Keun SON, Mi Yang KIM, Kyung Han LEE
  • Publication number: 20200381179
    Abstract: A dielectric ceramic composition and a multilayer ceramic electronic component are provided, the dielectric ceramic composition includes a barium titanate base material main component and a subcomponent, a microstructure after sintering includes a first crystal grain including 3 or less domain boundaries and a second crystal grain including 4 or more domain boundaries, and an area ratio of the second crystal grain to the total crystal grains is 20% or less.
    Type: Application
    Filed: September 18, 2019
    Publication date: December 3, 2020
    Inventors: Seok Hyun YOON, Mi Yang KIM, Jin Woo KIM, Dong Hun KIM, Jung Deok PARK
  • Patent number: 10639666
    Abstract: The present invention relates to a superparticle atomizing device and, more specifically, to a superparticle atomizing device having an inner plate provided at the upper part of an ultrasonic vibrator inside a housing and having a circulation passage formed at the circumference of the inner plate of the inside of the housing by using the rapid flow rate of the air to be ventilated to the inside of the housing through a blower, and thus only liquid microparticles generated at the lower region of the inner plate by the ultrasonic vibrator are pulled up to the upper region thereof, thereby allowing the liquid microparticles to be atomized through an atomizing hole and allowing the liquid microparticles to be rapidly diffused into the air with rapid ventilation air.
    Type: Grant
    Filed: March 7, 2016
    Date of Patent: May 5, 2020
    Assignees: SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION, PURETECK CO., LTD.
    Inventors: Jeong Woo Kim, Jeong Yang Kim, Yun Jaie Choi
  • Patent number: D909394
    Type: Grant
    Filed: September 19, 2019
    Date of Patent: February 2, 2021
    Inventor: Min Yang Kim
  • Patent number: D957017
    Type: Grant
    Filed: June 13, 2019
    Date of Patent: July 5, 2022
    Inventor: Min Yang Kim