Abstract: A semiconductor device comprises a signal pin mounted on a base plate by adhesive. Parasitic capacitance exists between the pin and the base plate in the region of adhesive and may deleteriously affect the operation of circuitry in chip connected to pin by a bond wire. A bond wire connecting pin to the base plate has an inductance which forms a parallel resonant circuit with the parasitic capacitance, so that, at the resonant frequency, signals on pin at substantially the same frequency pass to or from the chip substantially unattenuated by the parasitic capacitance. Alternatively, the inductances of the signal pin and the bond wires may be such that, at the frequency of signals on the signal pin, an impedance transformation is provided between the input to the signal pin and the end of the first bond wire where it connects to the chip.