Abstract: A system for data object replication includes at least one hardware processor and at least one memory storing instructions. The instructions cause the at least one hardware processor to perform operations including parsing a replication request to obtain a data object and identification information identifying a set of databases at a first deployment of a data provider. A dependency of the data object to one or more additional data objects stored in the set of databases is detected. A sequential replication of the data object and the one or more additional data object from the first deployment to a second deployment of the data provider is performed. The second deployment is identified by the replication request. A sequence of the sequential replication is based on the detected dependency.

Abstract: An acoustic metasurface structure is configured to absorb sounds. The acoustic metasurface structure comprises a main body, an externally-connecting configuration and an inner configuration. The externally-connecting configuration and the inner configuration are respectively formed inside the main body. An externally-connecting tube of the externally-connecting configuration is in fluid communication with an external environment and an externally-connecting cavity of the externally-connecting configuration. An inner tube of the inner configuration is in fluid communication with the externally-connecting cavity and an inner cavity of the inner configuration. With the externally-connecting configuration and the inner configuration forming a series-type structure in the main body, the acoustic metasurface structure increases an acoustic impedance.

Abstract: A system for data object replication includes at least one hardware processor and at least one memory storing instructions. The instructions cause the at least one hardware processor to perform operations including parsing a replication request to obtain a data object and identification information identifying a set of databases at a first deployment of a data provider. A dependency of the data object to one or more additional data objects stored in the set of databases is detected. A sequential replication of the data object and the one or more additional data object from the first deployment to a second deployment of the data provider is performed. The second deployment is identified by the replication request. A sequence of the sequential replication is based on the detected dependency.

Abstract: A system for data object replication includes at least one hardware processor and at least one memory storing instructions. The instructions cause the at least one hardware processor to perform operations including decoding a replication request to obtain a data object. Object dependencies associated with the data object and a plurality of additional data objects are determined. A replication sequence of the data object and the plurality of additional data objects is determined based on the object dependencies. A replication of the data object and at least one of the plurality of additional data objects is performed according to the replication sequence. A notification of a successful completion of the replication is generated.

Abstract: A system for data object replication includes at least one hardware processor and at least one memory storing instructions. The instructions cause the at least one hardware processor to perform operations including decoding a replication request to obtain a data object. Object dependencies associated with the data object and a plurality of additional data objects are determined. A replication sequence of the data object and the plurality of additional data objects is determined based on the object dependencies. A replication of the data object and at least one of the plurality of additional data objects is performed according to the replication sequence. A notification of a successful completion of the replication is generated.

Abstract: Provided herein are systems and methods for configuring replication of account object metadata. A system includes at least one hardware processor coupled to a memory and configured to decode a replication request received from a client device of a data provider. The replication request indicates at least a first account object, a source account, and a target account of the data provider. An object dependency of the at least first account object to at least a second account object of the data provider is determined. A replication of the at least first account object and the at least second account object is performed from the source account into the target account of the data provider.

Abstract: A semiconductor device includes a substrate, at least one source drain feature, a gate structure, and at least one gate spacer. The source/drain feature is present at least partially in the substrate. The gate structure is present on the substrate. The gate spacer is present on at least one sidewall of the gate structure. At least a bottom portion of the gate spacer has a plurality of dopants therein.

Abstract: A semiconductor device includes a fin-like structure extending along a first axis; a first source/drain feature disposed at a first end portion of the fin-like structure; and a constraint layer disposed at a first side of the first end portion of the fin-like structure, wherein the first source/drain feature comprises a first portion, disposed at the first side, the first portion comprising a shorter extended width along a second axis, and a second portion, disposed at a second side that is opposite to the first side, the second portion comprising a longer extended width along the second axis.

Abstract: A semiconductor device includes a substrate, at least one source drain feature, a gate structure, and at least one gate spacer. The source/drain feature is present at least partially in the substrate. The gate structure is present on the substrate. The gate spacer is present on at least one sidewall of the gate structure. At least a bottom portion of the gate spacer has a plurality of dopants therein.

Abstract: An embodiment is a structure including a first fin over a substrate, a second fin over the substrate, the second fin being adjacent the first fin, an isolation region surrounding the first fin and the second fin, a first portion of the isolation region being between the first fin and the second fin, a gate structure along sidewalls and over upper surfaces of the first fin and the second fin, the gate structure defining channel regions in the first fin and the second fin, a gate seal spacer on sidewalls of the gate structure, a first portion of the gate seal spacer being on the first portion of the isolation region between the first fin and the second fin, and a source/drain region on the first fin and the second fin adjacent the gate structure.

Abstract: A semiconductor device includes a fin-like structure extending along a first axis; a first source/drain feature disposed at a first end portion of the fin-like structure; and a constraint layer disposed at a first side of the first end portion of the fin-like structure, wherein the first source/drain feature comprises a first portion, disposed at the first side, the first portion comprising a shorter extended width along a second axis, and a second portion, disposed at a second side that is opposite to the first side, the second portion comprising a longer extended width along the second axis.

Abstract: A transistor includes a semiconductive fin having a channel portion, a gate stack over the channel portion of the semiconductive fin, source and drain structures on opposite sides of the gate stack and adjoining the semiconductive fin, and a sidewall structure extending along sidewalls of a body portion of the source structure. The source structure has a curved top, and the source structure has a top portion protruding over a top of the sidewall structure.

Abstract: A semiconductor device includes a fin-like structure extending along a first axis; a first source/drain feature disposed at a first end portion of the fin-like structure; and a constraint layer disposed at a first side of the first end portion of the fin-like structure, wherein the first source/drain feature comprises a first portion, disposed at the first side, the first portion comprising a shorter extended width along a second axis, and a second portion, disposed at a second side that is opposite to the first side, the second portion comprising a longer extended width along the second axis.

Abstract: An embodiment is a structure including a first fin over a substrate, a second fin over the substrate, the second fin being adjacent the first fin, an isolation region surrounding the first fin and the second fin, a first portion of the isolation region being between the first fin and the second fin, a gate structure along sidewalls and over upper surfaces of the first fin and the second fin, the gate structure defining channel regions in the first fin and the second fin, a gate seal spacer on sidewalls of the gate structure, a first portion of the gate seal spacer being on the first portion of the isolation region between the first fin and the second fin, and a source/drain region on the first fin and the second fin adjacent the gate structure.

Abstract: An embodiment is a structure including a first fin over a substrate, a second fin over the substrate, the second fin being adjacent the first fin, an isolation region surrounding the first fin and the second fin, a first portion of the isolation region being between the first fin and the second fin, a gate structure along sidewalls and over upper surfaces of the first fin and the second fin, the gate structure defining channel regions in the first fin and the second fin, a gate seal spacer on sidewalls of the gate structure, a first portion of the gate seal spacer being on the first portion of the isolation region between the first fin and the second fin, and a source/drain region on the first fin and the second fin adjacent the gate structure.

Abstract: A transistor includes a semiconductive fin having a channel portion, a gate stack over the channel portion of the semiconductive fin, source and drain structures on opposite sides of the gate stack and adjoining the semiconductive fin, and a sidewall structure extending along sidewalls of a body portion of the source structure. The source structure has a curved top, and the source structure has a top portion protruding over a top of the sidewall structure.

Abstract: A pet pacifying environmental device includes a base, a cover mounted on the base, and a low-frequency radio wave generator mounted between the base and the cover.

Abstract: A method for manufacturing a semiconductor device includes forming a gate stack over a semiconductor fin such that the gate stack exposes the semiconductor fin. The semiconductor fin exposed by the gate stack is recessed. An epitaxy structure is epitaxially grown on a recessed portion of the semiconductor fin, and the epitaxy structure is etched such that the epitaxy structure has a curved top.

Abstract: A semiconductor device includes a fin-like structure extending along a first axis; a first source/drain feature disposed at a first end portion of the fin-like structure; and a constraint layer disposed at a first side of the first end portion of the fin-like structure, wherein the first source/drain feature comprises a first portion, disposed at the first side, the first portion comprising a shorter extended width along a second axis, and a second portion, disposed at a second side that is opposite to the first side, the second portion comprising a longer extended width along the second axis.

Abstract: A semiconductor device includes a substrate, at least one source drain feature, a gate structure, and at least one gate spacer. The source/drain feature is present at least partially in the substrate. The gate structure is present on the substrate. The gate spacer is present on at least one sidewall of the gate structure. At least a bottom portion of the gate spacer has a plurality of dopants therein.