Abstract: A driving method of a nonvolatile memory device includes receiving a program command and an address. The method includes changing a number of adjacent zones of a plurality of zones formed of unselected word lines according to a location of a selected word line corresponding to the received address. The method further includes applying different zone voltages to the number of adjacent zones and remaining zones. The nonvolatile memory device includes a plurality of strings formed to penetrate word lines stacked on a substrate in a plate shape.

Abstract: A driving method of a nonvolatile memory device includes receiving a program command and an address. The method includes changing a number of adjacent zones of a plurality of zones formed of unselected word lines according to a location of a selected word line corresponding to the received address. The method further includes applying different zone voltages to the number of adjacent zones and remaining zones. The nonvolatile memory device includes a plurality of strings formed to penetrate word lines stacked on a substrate in a plate shape.

Abstract: A program verification method is for a nonvolatile memory device which programs a plurality of memory cells. The program verification method includes applying a plurality of verification voltages, and determining whether programming of memory cells, having different target threshold voltage distributions, from among the plurality of memory cells is completed based on one of the plurality of verification voltages.

Abstract: A driving method of a nonvolatile memory device includes receiving a program command and an address. The method includes changing a number of adjacent zones of a plurality of zones formed of unselected word lines according to a location of a selected word line corresponding to the received address. The method further includes applying different zone voltages to the number of adjacent zones and remaining zones. The nonvolatile memory device includes a plurality of strings formed to penetrate word lines stacked on a substrate in a plate shape.

Abstract: A program verification method is for a nonvolatile memory device which programs a plurality of memory cells. The program verification method includes applying a plurality of verification voltages, and determining whether programming of memory cells, having different target threshold voltage distributions, from among the plurality of memory cells is completed based on one of the plurality of verification voltages.

Abstract: A driving method of a nonvolatile memory device includes receiving a program command and an address. The method includes changing a number of adjacent zones of a plurality of zones formed of unselected word lines according to a location of a selected word line corresponding to the received address. The method further includes applying different zone voltages to the number of adjacent zones and remaining zones. The nonvolatile memory device includes a plurality of strings formed to penetrate word lines stacked on a substrate in a plate shape.

Abstract: A driving method of a nonvolatile memory device includes receiving a program command and an address. The method includes changing a number of adjacent zones of a plurality of zones formed of unselected word lines according to a location of a selected word line corresponding to the received address. The method further includes applying different zone voltages to the number of adjacent zones and remaining zones. The nonvolatile memory device includes a plurality of strings formed to penetrate word lines stacked on a substrate in a plate shape.

Abstract: A nonvolatile memory device includes a plurality of vertical NAND flash memory cells arranged in a three dimensional (3D) structure, a first memory block disposed in the 3D structure and having memory cells selected by a first ground selection line and a second ground selection line, wherein the first and second ground selection lines are electrically separated from each other, a second memory block disposed in the 3D structure and having memory cells selected by a third selection line and fourth selection line, wherein the third and fourth ground selection lines are electrically separated from each other, and a pass transistor that transfers a driving signal to turn on ground selection transistors respectively connected to the first and third ground selection lines in response to a block selection signal.

Abstract: A vertical nonvolatile memory device which includes a plurality of cell strings formed in a direction intersecting with a substrate is provided. The vertical nonvolatile memory device is configured to apply a non-selection read voltage to at least one selection line connected to a cell string from among the plurality of cell strings. The vertical nonvolatile memory device is configured to apply the non-selection read voltage to at least one unselected word line of the cell string a desired time period after the applying of the non-selection read voltage to the at least one selection line.

Abstract: A nonvolatile memory device comprises a plurality of vertical NAND flash memory cells arranged in a three dimensional (3D) structure, a first memory block disposed in the 3D structure and having memory cells selected by a first ground selection line and a second ground selection line, wherein the first and second ground selection lines are electrically separated from each other, a second memory block disposed in the 3D structure and having memory cells selected by a third selection line and fourth selection line, wherein the third and fourth ground selection lines are electrically separated from each other, and a pass transistor that transfers a driving signal to turn on ground selection transistors respectively connected to the first and third ground selection lines in response to a block selection signal.

Abstract: A driving method of a nonvolatile memory device includes receiving a program command and an address. The method includes changing a number of adjacent zones of a plurality of zones formed of unselected word lines according to a location of a selected word line corresponding to the received address. The method further includes applying different zone voltages to the number of adjacent zones and remaining zones. The nonvolatile memory device includes a plurality of strings formed to penetrate word lines stacked on a substrate in a plate shape.

Abstract: A vertical nonvolatile memory device which includes a plurality of cell strings formed in a direction intersecting with a substrate is provided. The vertical nonvolatile memory device is configured to apply a non-selection read voltage to at least one selection line connected to a cell string from among the plurality of cell strings. The vertical nonvolatile memory device is configured to apply the non-selection read voltage to at least one unselected word line of the cell string a desired time period after the applying of the non-selection read voltage to the at least one selection line.