Abstract: Energy storage converter and an energy storage system. First cavity of housing is configured to include first region and second region which are arranged along first direction, an airflow generation apparatus can generate first airflow flowing through first region and second airflow flowing through second region, and first airflow and second airflow both flow in from first side of first cavity and flow out from second side of first cavity, so that first region can be subjected to heat management by using first airflow, and second region can be subjected to heat management by using second airflow. Average heat generation of devices arranged in first region is greater than an average heat generation of devices arranged in second region, more of first airflow can flow into and flow out of first channel defined by cover by arranging cover in first region, heat management effect is improved.

Abstract: A power conversion system includes at least a liquid cooling member, a plurality of devices, an air cooling assembly, and a plurality of heat pipes. The liquid cooling member has a liquid cooling channel, the liquid cooling member has a first side and a second side opposite to each other in a first direction, and the first side has a plurality of mounting regions. The plurality of devices are arranged in the plurality of mounting regions. The air cooling assembly is disposed on the first side. The air cooling assembly includes an airflow generating member and a heat dissipation member located on an airflow path generated by the airflow generating member. The plurality of heat pipes are arranged in the plurality of mounting regions.

Abstract: A memory device may include bank increment counters (BICs) associated with individual banks. The bank increment counters may indicate a relative offset/count increment from a global counter for automatic refresh addresses. Refresh logic may combine the values of the BICs with the value of the global counter to generate a refresh address for a bank. This may cause a bank to refresh a row different than a row indicated by the global counter. In some examples, count logic may use information from the BICs to determine when to increment the global counter.

Abstract: Apparatuses and techniques are described for efficiently refreshing spare rows that can be used to repair rows of a “main” memory array. In example aspects, a memory device conserves power and timing resources by refreshing spare rows that are in an active state (e.g., spare rows that are used to repair rows within a memory array of the memory device) and skipping the refreshing of spare rows that are in an inactive state. At least one spare row that is in the inactive state is available for use in a future repair operation. The power and/or timing resources that are conserved through efficient refreshing of the spare rows of a reserve memory array can optionally be used to perform other operations, such as an error-correction-code operation, a refresh operation for mitigating usage-based-disturbance within the memory device, and/or a refresh operation on an active spare row within the reserve memory array.

Abstract: A memory device includes a row address bus coupled to the memory banks. The row address bus may carry addresses with refresh address flags. When a bank receives an activation signal it will latch an address with an inactive refresh address flag if the bank is receiving an inactive refresh signal or an address with an active refresh flag if the bank is receiving an active refresh signal. The memory device may include a dynamic refresh timer circuit with a number of array timers. When a refresh command is received, a currently unused one of the array timers is assigned to the refresh operation(s) responsive to that command. The assigned array timer provides the activation signal to the bank(s) where the refresh is being performed.

Abstract: Disclosed are a power conversion system (PCS) and an energy storage system. The PCS includes: a thermal management component having a fluid passage, and having a first side and a second side opposite to each other along a first direction; a plurality of elements disposed on the first side; and an air-cooling module disposed on the first side. The air-cooling module includes a fan and a radiator, the radiator includes a main body portion and a plurality of insertion members arranged at intervals, the main body portion is located on a path of an airflow generated by the fan, the insertion members are disposed on a side of the main body portion facing the thermal management component along the first direction.

Abstract: A memory device includes a row address bus coupled to the memory banks. The row address bus may carry addresses with refresh address flags. When a bank receives an activation signal it will latch an address with an inactive refresh address flag if the bank is receiving an inactive refresh signal or an address with an active refresh flag if the bank is receiving an active refresh signal. The memory device may include a dynamic refresh timer circuit with a number of array timers. When a refresh command is received, a currently unused one of the array timers is assigned to the refresh operation(s) responsive to that command. The assigned array timer provides the activation signal to the bank(s) where the refresh is being performed.

Abstract: A memory module includes several memory die. The memory die are entered into a self-refresh mode together. During the self-refresh mode one of the memory die of the rank is a leader device and provides a self-refresh signal while the other memory die are follower devices which receive the self-refresh signal. The memory die perform self-refresh operations responsive to the self-refresh signal. In this manner, self-refresh operations may be synchronized between the different die during the self-refresh mode.

Abstract: A memory package includes multiple memory devices and an error correction circuit. The data and error correction bits for multiple of the memory devices are pooled together by the error correction circuit. For example, during read operations each memory device provides data, error correction bits or both to the error correction circuit. The error correction circuit uses the pooled data and error correction bits to perform error correction. Pooling the bits may allow for more efficient error correction, which may free up additional bits to be used for extra bits (e.g., metadata), telemetry information about the error correction, link protection, or combinations thereof.

Abstract: An example display driver includes a timing controller and a source driver. The timing controller includes a voltage calculation circuit, an identifier generation circuit, and a P2P transmission circuit. The voltage calculation circuit is configured to determine a voltage value of an initialization signal needed during displaying of an ith row of pixel circuit of a display. The identifier generation circuit is configured to generate a switching identifier, where the switching identifier indicates the display to switch to the ith row of pixel circuit for displaying. The P2P transmission circuit is configured to send the switching identifier and the voltage value of the initialization signal to the source driver through a P2P setting instruction. The source driver is configured to provide the initialization signal for the display based on the switching identifier and the voltage value during displaying of the ith row of pixel circuit of the display.

Abstract: Method and system for user equipment (UE) to access the communications network comprising the UE receiving a public land mobile network identifier (PLMN ID) from the communications network. The UE determining that the received PLMN ID is associated with a non-terrestrial network (NTN) by matching the received PLMN ID with a PLMN ID stored within the UE. When the UE determines that the received PLMN ID is associated with an NTN, modifying operating characteristics of the UE.

Abstract: A memory device includes a memory array organized into banks, with each bank including a number of rows, each of which stores a number of codewords. Over the course an error check and scrub (ECS) cycle, ECS addresses for each codeword are sequentially generated and each codeword is checked for errors and those errors are corrected. One or more ECS operations may be performed responsive to an ECS command. The ECS command may specify address information about where the ECS operation(s) should be performed.

Abstract: Apparatuses and methods per-row count based refresh target identification. A memory device stores count values associated with the word lines. An aggressor detector circuit stores a maximum of the count values and a row address associated with the maximum count value. Responsive to a targeted refresh signal, the stored count value is compared to a threshold. If the count value has crossed the threshold, then a targeted refresh operation may be performed on one or more refresh addresses based on the stored address, and the count value may be reset.

Abstract: A method comprising obtaining, by a computing device, an image generation prompt that includes a description of an image to be generated. The method further includes providing, by the computing device, the image generation prompt to a machine learning model. The method further includes obtaining, by the computing device, the image from the machine learning model. The method further includes outputting, by the computing device, a graphical user interface that includes the image.

Abstract: Apparatuses and techniques for logging a memory address associated with faulty usage-based disturbance data are described. In an example aspect, a memory device can detect, at a local-bank level, a fault associated with usage-based disturbance data. This detection enables the memory device to log a row address associated with the faulty usage-based disturbance data. To avoid increasing a complexity and/or a size of the memory device, some implementations of the memory device can perform the address logging at the multi-bank level with the assistance of an engine, such as a test engine. The memory device stores the logged address in at least one mode register to communicate the fault to a memory controller. With the logged address, the memory controller can initiate a repair procedure to fix the faulty usage-based disturbance data.

Abstract: The embodiments of the present disclosure provide an integrated access and backhaul (IAB) communication device and a method thereof. The method includes: adding, by a second donor distributed unit (a target donor-DU), a header related to a transport network layer (TNL) tunnel to uplink data, and transmitting the uplink data to a first donor distributed unit (a source donor-DU) via the TNL tunnel; and/or adding, by a first donor distributed unit (a source donor-DU), a header related to a transport network layer (TNL) tunnel to downlink data, and transmitting the downlink data to a second donor distributed unit (a target donor-DU) via the TNL tunnel.

Abstract: Apparatuses and techniques for performing serialized update procedures during a refresh period are described. In example aspects, a memory device performs a normal refresh operation, which refreshes multiple rows simultaneously. The refreshed rows are associated with different refresh sections and different column segments. While refreshing the rows and prior to an end of a refresh cycle time (tRFC), the memory device updates, in a serialized manner, usage-based-disturbance data that is stored within the refreshed rows. In particular, the memory device performs, in series, multiple update procedures, which overwrites values of the usage-based-disturbance data that are stored within the refreshed rows. For example, the multiple update procedures can set values of activation counts that are stored within the refreshed rows to a predetermined value.

Abstract: Embodiments of the disclosure are drawn to apparatuses, systems, and methods for managing sPPR undo operations based on activation count values of original rows after a repair. After packaging, it may be necessary to perform post-package repair operations on rows of the memory. During an sPPR operation, an address of an original row of memory may be associated with an open repair address instead, such as when the original row is determined to be damaged or defective. The sPPR repair may be reversed by performing an sPPR undo operation. While the repair row is associated with the original row, the activation count of the original row may become corrupted, and it may be necessary to reset the activation count associated with the original row during a repair undo operation to prevent unnecessary refresh operations occurring on the original row and adjacent rows.

Abstract: Apparatuses and techniques for implementing usage-based-disturbance alert signaling are described. The technology allows usage-based-disturbance (UBD) alerts to be externally communicated from a memory device without a dedicated external interface. Rather, UBD alerts are combined with memory error/alert signals and communicated on a shared alert-related interface. UBD tracking occurs at the memory bank level, with corresponding independent UBD alert signals. These signals are efficiently combined to generate an overall UBD alert. A temporary backoff signal is generated when an overall UBD alert is sent. The backoff signal ensures requisite external timing parameters are met while allowing the individual memory banks to generate persistent UBD alerts.

Abstract: A value associated with a number of accesses of a word line and a length of said accesses may be stored on said word line. A timer may provide a periodic signal that increments a counter to update the value. The updated value may then be written back to the word line. In some examples, a memory device including the word lines may have a specification that prevents the word line from closing prior to writing the updated value to the word line.