Patents by Inventor Yang Lv

Yang Lv has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240071445
    Abstract: A circuit includes a first two-state device, a second two-state device and a third two-state device, each two-state device having a first resistance in a first state and a second resistance in a second state. First control elements are configured to apply a first voltage to the first two-state device to stochastically place the first two-state device in either the first state or the second state. Second control elements are configured to apply a second voltage to the second two-state device to stochastically place the second two-state device in either the first state or the second state. Third control elements are configured to send respective currents through the first two-state device and the second two-state device so as to place the third two-state device in either the first state or the second state based on the state of the first two-state device and the state of the second two-state devices.
    Type: Application
    Filed: August 23, 2023
    Publication date: February 29, 2024
    Inventors: Jian-Ping Wang, Brandon Zink, Yang Lv
  • Patent number: 11817460
    Abstract: A thin film transistor includes a gate, a gate insulating layer, an active layer, an ionized amorphous silicon layer, a source and a drain. The gate insulating layer covers the gate. The active layer is disposed on a side of the gate insulating layer away from the gate. The ionized amorphous silicon layer is disposed on a side of the active layer away from the gate, and the ionized amorphous silicon layer is in contact with the gate insulating layer. The source and the drain are disposed on a side of the ionized amorphous silicon layer away from the gate insulating layer, and the source and the drain are coupled to the active layer through the ionized amorphous silicon layer.
    Type: Grant
    Filed: March 27, 2020
    Date of Patent: November 14, 2023
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Chao Luo, Feng Guan, Zhi Wang, Jianhua Du, Yang Lv, Zhaohui Qiang, Chao Li
  • Publication number: 20230360288
    Abstract: The disclosure relates to a system and method for image reconstruction. The method may include the steps of: obtaining raw data corresponding to radiation rays within a volume, determining a radiation ray passing a plurality of voxels, grouping the voxels into a plurality of subsets such that at least some subset of voxels are sequentially loaded into a memory, and performing a calculation relating to the sequentially loaded voxels. The radiation ray may be determined based on the raw data. The calculation may be performed by a plurality of processing threads in a parallel hardware architecture. A processing thread may correspond to a subset of voxels.
    Type: Application
    Filed: July 17, 2023
    Publication date: November 9, 2023
    Applicant: SHANGHAI UNITED IMAGING HEALTHCARE CO., LTD.
    Inventors: Yang LV, Yu DING
  • Publication number: 20230334723
    Abstract: A post-processing special effect production system includes a visual operation panel and a resource file subsystem. The visual operation panel is configured to, in response to an operation instruction triggered by a user, perform a construction operation of a post-processing special effect component. The construction operation includes a node selection, an inter-node connection and a node parameter configuration that are performed for a related target node in the post-processing special effect component. The resource file subsystem is configured to provide the visual operation panel with a node-related file required by a construction of the post-processing special effect component, and receive and store a component resource file submitted by the visual operation panel relative to the post-processing special effect component.
    Type: Application
    Filed: November 29, 2022
    Publication date: October 19, 2023
    Inventors: Jiancong XU, Yang LV, Ruifeng MA, Haoming TAN
  • Publication number: 20230280376
    Abstract: A chip type coil-based fluxgate current sensor, comprising: a magnetism gathering iron core, a chip type coil, an integral filtering module, a signal driving module, a voltage acquisition module, and a signal amplification module which are connected in sequence. The chip type coil comprises a first high-resistance silicon wafer and a second high-resistance silicon wafer which are bonded with each other; a built-in cavity is formed between involution surfaces of first high-resistance silicon wafer and second high-resistance silicon wafer, and multiple solenoid cavities filled with coil materials are provided around the periphery of the cavity; a cavity opening is formed at one end after involution of first high-resistance silicon wafer and second high-resistance silicon wafer. The magnetism gathering iron core is inserted into the cavity of the chip type coil by means of the cavity opening. The present current sensor is small in size and stable in signal.
    Type: Application
    Filed: September 11, 2020
    Publication date: September 7, 2023
    Inventors: Xiaowei HOU, Yang LV, Liangguang ZHENG, Shengping ZHU, Po ZHANG, Peng WU
  • Publication number: 20230237625
    Abstract: Provided are a video processing method and apparatus, an electronic device, a storage medium and a program product. The method includes steps described below. A to-be-processed video is acquired, and a first face key point of a first target object in the to-be-processed video is recognized, where the first face key point corresponds to a mask key point in a three-dimensional human face mask special effect; and the three-dimensional human face mask special effect is added to video frames of the to-be-processed video to obtain a target video, where the mask key point in the three-dimensional human face mask special effect moves with the corresponding first face key point.
    Type: Application
    Filed: November 16, 2022
    Publication date: July 27, 2023
    Inventors: Jingcong ZHANG, Nathanael Schager, Xiaocheng Tang, James Gualtieri, Yang Lv, Zhe Huang, Zeyong Cai, Jing Wang, Xiaoyu Liu, Nite Luo, Julia Meng, Haiying Cheng, Qinzi Tan
  • Patent number: 11704846
    Abstract: The disclosure relates to a system and method for image reconstruction. The method may include the steps of: obtaining raw data corresponding to radiation rays within a volume, determining a radiation ray passing a plurality of voxels, grouping the voxels into a plurality of subsets such that at least some subset of voxels are sequentially loaded into a memory, and performing a calculation relating to the sequentially loaded voxels. The radiation ray may be determined based on the raw data. The calculation may be performed by a plurality of processing threads in a parallel hardware architecture. A processing thread may correspond to a subset of voxels.
    Type: Grant
    Filed: June 7, 2021
    Date of Patent: July 18, 2023
    Assignee: SHANGHAI UNITED IMAGING HEALTHCARE CO., LTD.
    Inventors: Yang Lv, Yu Ding
  • Publication number: 20230213598
    Abstract: A manufacturing method for a fluxgate chip, comprising: firstly, selecting two high-resistance silicon wafers, electroplating a ferromagnetic core on the surface of one of the two high-resistance silicon wafers, and providing a ferromagnetic core cavity on the surface of the other high-resistance silicon wafer; then, bonding the two high-resistance silicon wafers up and down; next, respectively providing coil grooves, through grooves and electrode windows on the surfaces of opposite sides of the two high-resistance silicon wafers to form a silicon wafer mold; and finally, filling the surface of the silicon wafer mold with alloy. By means of electroplating, post-bonding and final etching, on the one hand, the formed fluxgate chip has both small thickness and sufficient strength, on the other hand, large-scale batch production of the fluxgate chip can be achieved, the working efficiency is improved, and the production cost is reduced.
    Type: Application
    Filed: July 15, 2020
    Publication date: July 6, 2023
    Inventors: Xiaowei HOU, Yang LV, Liangguang ZHENG, Juping LI, Po ZHANG, Peng WU
  • Publication number: 20230026496
    Abstract: A measurement circuit of thin-film temperature sensor comprises: out-phase input end and output end of first operational amplifier are connected to first end of thin-film resistor; first end of first resistor is connected to output end of first operational amplifier, second end of first resistor is connected to in-phase input end of first operational amplifier; second end of first resistor is grounded via second resistor; output end of second operational amplifier is connected to first end of potentiometer; second end of the potentiometer is connected to the constant current source and in-phase input end of second operational amplifier respectively, first end of third resistor is connected to output end of second operational amplifier, second end of third resistor is connected to out-phase input end of second operational amplifier; second end of third resistor is grounded via fourth resistor; voltage value of second end of potentiometer is output signal.
    Type: Application
    Filed: July 15, 2020
    Publication date: January 26, 2023
    Inventors: Xiaowei HOU, Yang LV, Liangguang ZHENG, Junjie GUO, Juping LI, Po ZHANG
  • Publication number: 20220406820
    Abstract: A thin film transistor includes a substrate and an active layer having a channel region. The active layer includes a first active pattern and at least one second active pattern. The first active pattern includes a bottom surface, a top surface and at least one side surface. The at least one side surface connects the bottom and top surfaces, and is in contact with the at least one second active pattern. A length direction of each side surface is approximately perpendicular to a length direction of the channel region. A material of at least the top surface of the first active pattern includes a first polysilicon material, and a material of the second active pattern includes a second polysilicon material; and in the length direction of the channel region, an average grain size of the first polysilicon material is greater than an average grain size of the second polysilicon material.
    Type: Application
    Filed: July 8, 2021
    Publication date: December 22, 2022
    Applicant: BOE TECHNOLOGY GROUP CO., LTD.
    Inventor: Yang LV
  • Publication number: 20220399465
    Abstract: A thin film transistor is provided. The thin film transistor includes abase substrate; a gate electrode on the base substrate; an active layer on the base substrate, the active layer including a polycrystalline silicon part including a polycrystalline silicon material and an amorphous silicon part including an amorphous silicon material; a gate insulating layer insulating the gate electrode from the active layer; a source electrode and a drain electrode on the base substrate; and an etch stop layer on a side of the polycrystalline silicon part away from the base substrate. An orthographic projection of the etch stop layer on the base substrate covers an orthographic projection of the polycrystalline silicon part on the base substrate, and an orthographic projection of at least a portion of the amorphous silicon part on the base substrate.
    Type: Application
    Filed: December 21, 2020
    Publication date: December 15, 2022
    Applicant: BOE Technology Group Co., Ltd.
    Inventors: Feng Guan, Yichi Zhang, Yang Lv
  • Publication number: 20220392130
    Abstract: The present disclosure discloses an image special effect processing method and apparatus, an electronic device and a computer-readable storage medium. The method includes: in response to an instruction for adding a special effect object on an initial image, determining a target display region of the special effect object on the initial image, where the target display region is a foreground region or a background region of the initial image, the foreground region is an image region where a target object is located in the initial image, and the background region is an image region other than the foreground region in the initial image; and displaying a part of the special effect object located in the target display region on the initial image to obtain a target image.
    Type: Application
    Filed: August 15, 2022
    Publication date: December 8, 2022
    Inventors: Juntao SUN, Yang LV, Gao LIU, Ruifeng MA
  • Patent number: 11469336
    Abstract: The present disclosure relates to a photodiode, a method for preparing the same, and an electronic device. The photodiode includes: a first electrode layer and a semiconductor structure that are stacked, a surface of the semiconductor structure away from the first electrode layer having a first concave-convex structure; and a second electrode layer arranged on a surface of the semiconductor structure away from the first electrode layer, a surface of the second electrode layer away from the first electrode layer having a second concave-convex structure.
    Type: Grant
    Filed: January 17, 2020
    Date of Patent: October 11, 2022
    Assignee: BEIJING BOE TECHNOLOGY DEVELOPMENT CO., LTD.
    Inventors: Jianhua Du, Chao Li, Zhaohui Qiang, Yupeng Gao, Feng Guan, Rui Huang, Zhi Wang, Yang Lv, Chao Luo
  • Patent number: 11459849
    Abstract: A sealing method for a drilled hole in three zones of overburden comprises: blocking the fissure zone and the caving zone with at least one filling bag; and transporting prepared cement slurry to the drilled hole through a hollow drill pipe, so as to block the curved subsidence zone. The three zones of overburden comprise a fissure zone, a caving zone and a curved subsidence zone.
    Type: Grant
    Filed: April 26, 2022
    Date of Patent: October 4, 2022
    Assignees: CHINA UNIVERSITY OF MINING AND TECHNOLOGY, BEIJING, Shaanxi Coal Caojiatan Mining Co., Ltd.
    Inventors: Yifan Zeng, Qiang Wu, Zhaolai Hua, Rui Wang, Zhenzhong Pang, Lu Wang, Yang Lv, Xin Du, Kai Pang, Aoshuang Mei
  • Publication number: 20220195788
    Abstract: A purification window embedded with a ventilation system, including: a window frame, and a double-layered glass window unit arranged in the window frame. An outdoor window screen roll and an indoor window screen roll are arranged at a left stile and a right stile, respectively. An upper middle position and a lower middle position of the double-layered glass window unit are respectively in rotational connection with a top rail via an upper shaft and a bottom rail via a lower shaft. The ventilation system includes: an air supply chamber and an exhaust chamber, both of which provided therein with T-shaped air dampers and fans. Both external edges of the outdoor window screen roll and the indoor window screen roll are provided with magnetic tapes configured for fixation connection with the upper shaft and the lower shaft.
    Type: Application
    Filed: March 23, 2021
    Publication date: June 23, 2022
    Inventors: Yang Lv, Rui Zhu
  • Patent number: 11313908
    Abstract: A detection circuit includes a switch conversion unit and a collection control unit. The switch conversion unit is configured to: enable a first end of the switch conversion unit to connect to a third end of the switch conversion unit within first duration, and enable a second end of the switch conversion unit to connect to the third end of the switch conversion unit within second duration. The collection control unit is configured to: collect a voltage (V1) between a first end of a relay and a second end of a battery pack within the first duration, collect a voltage (V2) between a second end of the relay and the second end of the battery pack within the second duration, and determine, based on V1 and V2, whether the relay is faulty.
    Type: Grant
    Filed: September 19, 2019
    Date of Patent: April 26, 2022
    Assignee: HUAWEI TECHNOLOGIES CO., LTD.
    Inventors: Wencheng Wang, Yang Lv, Ting Gao
  • Publication number: 20220115413
    Abstract: A thin film transistor includes a gate, a gate insulating layer, an active layer, an ionized amorphous silicon layer, a source and a drain. The gate insulating layer covers the gate. The active layer is disposed on a side of the gate insulating layer away from the gate. The ionized amorphous silicon layer is disposed on a side of the active layer away from the gate, and the ionized amorphous silicon layer is in contact with the gate insulating layer. The source and the drain are disposed on a side of the ionized amorphous silicon layer away from the gate insulating layer, and the source and the drain are coupled to the active layer through the ionized amorphous silicon layer.
    Type: Application
    Filed: March 27, 2020
    Publication date: April 14, 2022
    Inventors: Chao LUO, Feng GUAN, Zhi WANG, Jianhua DU, Yang LV, Zhaohui QIANG, Chao LI
  • Patent number: 11280423
    Abstract: Provided is a thermostatic valve including a first valve body, a second valve body, a third valve body, a first thermal actuator, a second thermal actuator, a valve core, a first valve port, a second valve port and a third valve port. The first valve body includes a second cavity and a third cavity. The second thermal actuator is sealedly fixed in the first valve body to isolate the second cavity from the third cavity. At least a part of the valve core is located in the second cavity. The valve core is connected to, or is integrated with, or abuts against a second valve stem of the second thermal actuator. The second thermal actuator is configured to act in response to a change in temperature of a fluid in the third cavity. The valve core is configured to open the second valve port or the third valve port in response to an action of the second valve stem.
    Type: Grant
    Filed: June 13, 2019
    Date of Patent: March 22, 2022
    Inventors: Haoming Qiu, Xiaojun Qian, Xiaodan Lv, Yang Lv
  • Publication number: 20220081379
    Abstract: The invention provides a continuous preparation method of 2,3,3,3-tetrafluoropropene, comprising the following steps: carrying out liquid-phase catalytic telomerization reaction on ethylene and carbon tetrachloride serving as initial raw materials in the presence of a composite catalyst to obtain a reaction product; performing two-stage membrane separation and purification on the reaction product, and then sequentially performing a primary high-temperature cracking reaction, a gas-phase chlorination reaction, a secondary high-temperature cracking reaction, a primary gas-phase catalytic fluorination reaction and a secondary gas-phase catalytic fluorination reaction to obtain a reaction product; condensing and rectifying the secondary gas-phase catalytic fluorination reaction product to obtain the 2,3,3,3-tetrafluoropropene product.
    Type: Application
    Filed: December 17, 2019
    Publication date: March 17, 2022
    Applicant: Zhejiang Juhua Technology Center Co., Ltd.
    Inventors: Yang LV, Hongfeng LI, Qi JIANG, Liyong MA, Jinming WANG
  • Patent number: 11251208
    Abstract: A photosensor includes a base substrate; an insulating layer on the base substrate; and a photodiode including a semiconductor junction on a side of the insulating layer away from the base substrate. The semiconductor junction includes a first polarity semiconductor layer, an intrinsic semiconductor layer, and a second polarity semiconductor layer, stacked on the insulating layer. The second polarity semiconductor layer encapsulates a lateral surface of the intrinsic semiconductor layer.
    Type: Grant
    Filed: March 18, 2019
    Date of Patent: February 15, 2022
    Assignee: BOE Technology Group Co., Ltd.
    Inventors: Chao Li, Jianhua Du, Feng Guan, Zhaohui Qiang, Zhi Wang, Yupeng Gao, Yang Lv