Abstract: In a method of manufacturing a semiconductor device, a fin structure having a channel region protruding from an isolation insulating layer disposed over a semiconductor substrate is formed, a cleaning operation is performed, and an epitaxial semiconductor layer is formed over the channel region. The cleaning operation and the forming the epitaxial semiconductor layer are performed in a same chamber without breaking vacuum.

Abstract: Methods for making thin-films on semiconductor substrates, which may be patterned using EUV, include: depositing the organometallic polymer-like material onto the surface of the semiconductor substrate, exposing the surface to EUV to form a pattern, and developing the pattern for later transfer to underlying layers. The depositing operations may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), and ALD with a CVD component, such as a discontinuous, ALD-like process in which metal precursors and counter-reactants are separated in either time or space.

Abstract: A method comprises a plurality of cycles, wherein each cycle, comprises exposing the carbon containing etch layer to oxygen radicals to modify part of the carbon containing etch layer. The carbon containing etch layer is exposed to bombardment ions with an energy greater than 100 eV for less than 0.5 seconds, wherein the bombardment ions remove the modified part of the carbon containing etch layer to form etched features.

Abstract: A method for selectively etching at least one feature in a silicon oxide region with respect to a lower oxygen containing region is provided. An etch gas comprising a metalloid or metal containing precursor and a halogen containing component is provided. The etch gas is formed into a plasma. At least one feature in the silicon oxide region is selectively etched with respect to the lower oxygen containing region, while simultaneously forming a metalloid or metal containing hardmask over the lower oxygen containing region.

Abstract: The embodiments of the disclosure provide a method for providing an input event to a virtual object, a host, and a computer readable storage medium. The method includes: displaying a first virtual object in a virtual world, wherein the first virtual object includes a plurality of coordinates; obtaining at least one mapping relationship between control events of an input object and the plurality of coordinates on the first virtual object; receiving a control event from the input object; determining a first target coordinate, among the plurality of coordinates, corresponding to the control event based on the at least one mapping relationship, and providing a first input event to the first virtual object based on the first target coordinate, wherein the first input event corresponds to the control event from the input object.

Abstract: A method for atomic layer etching a metal containing layer is provided. At least a region of a surface of the metal containing layer is modified to form a modified metal containing region by exposing a surface of the metal containing layer to a modification gas, wherein adjacent to the modified metal containing region remains an unmodified metal containing region. The modified metal containing region is selectively removed with respect to the unmodified metal containing region by exposing the surface of the metal containing layer to an inert bombardment plasma generated from an inert gas.

Abstract: A displayed power correction method, adapted to a target battery with a battery temperature lower than a threshold temperature, is performed by a controller and includes: determining whether the target battery is a first type battery or a second type battery according to designed power of the target battery, lowering displayed power according to a first default rate of the first type battery when the target battery is the first type battery and a battery cell voltage of the target battery is lower than a threshold voltage, and lowering displayed power according to a second default rate of the second type battery when the target battery is the second type battery and a capacity parameter or a voltage parameter of the target battery is higher than a default value.

Abstract: Methods for making thin-films on semiconductor substrates, which may be patterned using EUV, include: depositing the organometallic polymer-like material onto the surface of the semiconductor substrate, exposing the surface to EUV to form a pattern, and developing the pattern for later transfer to underlying layers. The depositing operations may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), and ALD with a CVD component, such as a discontinuous, ALD-like process in which metal precursors and counter-reactants are separated in either time or space.

Abstract: In an embodiment, a device includes: an isolation region on a substrate; a first semiconductor fin protruding above the isolation region; a second semiconductor fin protruding above the isolation region; and a dielectric fin between the first semiconductor fin and the second semiconductor fin, the dielectric fin protruding above the isolation region, the dielectric fin including: a first layer including a first dielectric material having a first carbon concentration; and a second layer on the first layer, the second layer including a second dielectric material having a second carbon concentration, the second carbon concentration greater than the first carbon concentration.

Abstract: A method for atomic layer etching a metal containing layer is provided. At least a region of a surface of the metal containing layer is modified to form a modified metal containing region by exposing a surface of the metal containing layer to a modification gas, wherein adjacent to the modified metal containing region remains an unmodified metal containing region. The modified metal containing region is selectively removed with respect to the unmodified metal containing region by exposing the surface of the metal containing layer to an inert bombardment plasma generated from an inert gas.

Abstract: Embodiments of the present disclosure provide semiconductor device structures and methods of forming the same. The method includes forming a first fin structure and a second fin structure from a substrate, depositing a first conformal layer over the first and second fin structures and between the first and second fin structures, depositing a second conformal layer on the first conformal layer, depositing a third conformal layer on the second conformal layer, depositing a fourth conformal layer on the third conformal layer, depositing a first insulating material on the fourth conformal layer between the first and second fin structures, and depositing a second insulating material on the first insulating material. The first and second fin structures are embedded by the second insulating material. The method further includes removing portions of the second insulating material and the first, second, third, and fourth conformal layers to expose the first and second fin structures.

Abstract: A method is provided. A substrate situated in a chamber is exposed to a halogen-containing gas comprising an element selected from the group consisting of silicon, germanium, carbon, titanium, and tin, and igniting a plasma to modify a surface of the substrate and form a modified surface. The substrate is exposed to an activated activation gas to etch at least part of the modified surface.

Abstract: Tin oxide films are used as mandrels in semiconductor device manufacturing. In one implementation the process starts by patterning a tin oxide layer using at least one of a hydrogen-based etch chemistry and a chlorine-based etch chemistry, and using patterned photoresist as a mask, thereby providing a substrate having a plurality of protruding tin oxide features (mandrels). Next, a conformal layer of spacer material is formed both on the horizontal surfaces and on the sidewalls of the mandrels. The spacer material is then removed from the horizontal surfaces exposing the tin oxide material of the mandrels, without fully removing the spacer material residing at the sidewalls of the mandrels. Next, mandrels are selectively removed (e.g., using hydrogen-based etch chemistry), while leaving the spacer material that resided at the sidewalls of the mandrels. The resulting spacers can be used for patterning underlying layers on the substrate.

Abstract: The embodiments of the disclosure provide a method for activating a system function, a host, and a computer readable storage medium. The method includes: providing a visual content; tracking a first motion state of a physical object by using a tracking device; and in response to determining that the first motion state of the physical object indicates that a distance between the physical object and the host is less than a first distance threshold and the physical object corresponds to a first content region in the visual content, performing a first system function corresponding to the first content region, wherein the first content region corresponds to a first physical region on a body of the host.

Abstract: Various embodiments of the present disclosure provide a semiconductor device structure. In one embodiment, the semiconductor device structure includes a plurality of semiconductor layers vertically stacked, a plurality of inner spacers, each being disposed between two adjacent semiconductor layers. The structure also includes a source/drain feature in contact with each of the inner spacers, a gate electrode layer surrounding a portion of each of the plurality of the semiconductor layers, and a cap layer disposed between the source/drain feature and each of the plurality of the semiconductor layers.

Abstract: Embodiments of the present disclosure provide a method for selectively forming a seed layer over semiconductor fins. Some embodiments provide forming the selective seed layer using a mono-silane at an increased temperature. Some embodiments provide depositing a hetero-crystalline silicon cap layer over the bottom-up gap layer to improve gap filling and tune profiles of fin structures.

Abstract: A combination of an anti-TROP-2 antibody-drug conjugate and anti-PD-L1 antibody or other chemotherapeutic drugs such as Carboplatin or Cisplatin, and an application of the combination in the preparation of drugs for preventing and/or treating tumor diseases, wherein the anti-TROP-2 antibody may be Sacituzumab.

Abstract: A method, a system and a recording medium for accessory pairing are provided. The method comprises: determining a type of the accessory based on the identifying information of an accessory; recognizing a type of a user body part according to an image; in response to the accessory is applicable to the user body part according to the type of accessory and the type of the user body part, obtaining a first position of the accessory within an environment and obtaining a second position of the user body part within the environment; and configuring the accessory to pair the user body part according to the first position of the accessory and the second position of the user body part.

Abstract: A printer and a printing method therefor is disclosed. The printing method includes: S1: editing a print template at a printer, the edited print template including a custom field and a variable field, and printing the custom field before the variable field; S2: obtaining weighing data at a weighing instrument; S3: obtaining weighing data that matches the variable field, inserting the matched weighing data in a position of the corresponding variable field, and printing the weighing data after the weighing data is completely matched; determining whether the weighing data at the instrument is completely sent and/or completely obtained by the printer, and if the weighing data is not completely sent and/or obtained, returning to step S2, or if the weighing data is completely sent and/or obtained, performing step S5; and S5: if there is still a custom field not printed in the print template, printing the custom field not printed.

Abstract: Methods for making thin-films on semiconductor substrates, which may be patterned using EUV, include: depositing the organometallic polymer-like material onto the surface of the semiconductor substrate, exposing the surface to EUV to form a pattern, and developing the pattern for later transfer to underlying layers. The depositing operations may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), and ALD with a CVD component, such as a discontinuous, ALD-like process in which metal precursors and counter-reactants are separated in either time or space.