Abstract: A polysilsesquioxane/polyetheretherketone composite membrane and a method for preparing the same are provided. The method includes: obtaining a polysilsesquioxane polymeric sol by mixing an ethanol solvent and a polysilsesquioxane precursor, sequentially adding deionized water and hydrochloric acid after complete dissolution, followed by constant-temperature water bath stirring for performing a polymerization reaction; and obtaining the polysilsesquioxane/polyetheretherketone composite membrane by coating the polysilsesquioxane polymeric sol on a polyetheretherketone support on which an intermediate layer is formed by knife coating.

Abstract: A method for atomic layer etching copper or copper alloy over a substrate in a plasma processing chamber comprising a plurality of cycles is provided. Each cycle of the plurality of cycles comprises a copper modification phase and an activation phase. The copper modification phase comprises flowing a modification gas into the plasma processing chamber, transforming the modification gas into a modification plasma, and exposing the copper or copper alloy to the modification plasma, wherein at least a part of the copper or copper alloy is modified. The activation phase comprises flowing an activation gas into the plasma processing chamber, wherein the activation gas, comprises a hydrogen containing gas, transforming the activation gas into an activation plasma, and exposing the modified copper or copper alloy to the activation plasma, wherein at least a volatile copper or copper alloy complex is formed.

Abstract: Disclosed is a system and method for delivering pulsed RF power from a single generator to multiple distributed plasma sources in a semiconductor process system. A Single-Pole Multi-Throw (SPMT) switch, dynamically controlled in real time, selectively routes individual pulses or groups of pulses to designated plasma sources. Each pulse can be independently configured with specific RF power, frequency, and duration, allowing precise and adaptable power distribution to components such as the center and multiple edge coils of a transformer coupled plasma (TCP) source.

Abstract: A nucleic acid extraction and fluorescent PCR detection system, comprising: an extraction strip, an extraction strip loading device for loading the extraction strip, a sample holder loading device for loading and unloading samples, an extraction strip transfer gripper for driving the extraction strip to move to a preset position, a nucleic acid extraction device for purifying the samples to obtain nucleic acids, a PCR detection device for performing fluorescent PCR detection on the nucleic acids, and a control device, wherein the extraction strip loading device, the sample holder loading device, the extraction strip transfer gripper, the nucleic acid extraction device and the PCR detection device are all connected to the control device. The problems of relatively poor flexibility and relatively low detection efficiency of a nucleic acid extraction and detection system can be ameliorated, so that a sample detection process is more flexible and convenient.

Abstract: A method for etching features in a stack below a patterned mask in an etch chamber is provided. The stack is cooled with a coolant with a coolant temperature below ?20° C. An etch gas is flowed into the etch chamber. A plasma is generated from the etch gas. Features are selectively etched into the stack with respect to the patterned mask.

Abstract: Etching a refractory metal or other high surface binding energy material on a substrate can maintain or increase the smoothness of the metal/high EO surface, in some cases produce extreme smoothing. A substrate having an exposed refractory metal/high EO surface is provided. The refractory metal/high EO surface is exposed to a modification gas to modify the surface and form a modified refractory metal/high EO surface. The modified refractory metal/high EO surface is exposed to an energetic particle to preferentially remove the modified refractory metal/high EO surface relative to an underlying unmodified refractory metal/high EO surface such that the exposed refractory metal/high EO surface after removing the modified refractory metal/high EO surface is as smooth or smoother than the substrate surface before exposing the substrate surface to the modification gas.

Abstract: Disclosed herein are systems and methods for an atomic layer etching (ALE) process that includes a surface modification step followed by a sputtering step. An enhanced transformer coupled plasma (TCP) source incorporating an additional sidewall coil positioned near the chuck is utilized to increase plasma density during the surface modification step and to provide improved control over ion density, energy, and angular distribution, particularly around the substrate edge during the sputtering step.

Abstract: Disclosed herein are systems and methods for a transformer-coupled plasma (TCP) source with uniformity control mechanisms, particularly for small plasma process chambers. The TCP source includes a center coil, an edge coil, and a middle coil. The center and edge coils receive a first pulsed RF power at a first frequency, while the middle coil receives a second pulsed RF power at a substantially lower frequency. Each pulse of the second RF power overlaps with a pulse of the first RF power to enhance plasma uniformity.

Abstract: Disclosed herein are systems and methods for an atomic layer etching (ALE) process that includes a surface modification step and a sputtering step. An improved capacitively coupled plasma (CCP) source with sidewall coils is utilized to enhance plasma density and reduce ion bombardment during the surface modification step. During the sputtering step, the CCP process chamber operates with the sidewall coils deactivated.

Abstract: A household appliance includes a water-using device, a first communication module and a first water interface; the water-using device is configured to automatically dock with a smart cleaning machine, and clean water is supplemented into the water-using device by means of taking water from the smart cleaning machine; the first communication module is used for communicating with the smart cleaning machine, and the first water interface is used for taking water from the smart cleaning machine after being connected to a second water interface of the smart cleaning machine.

Abstract: A method for etching features in a stack below a patterned mask in an etch chamber is provided. The stack is cooled with a coolant with a coolant temperature below ?20° C. An etch gas is flowed into the etch chamber. A plasma is generated from the etch gas. Features are selectively etched into the stack with respect to the patterned mask.

Abstract: Disclosed is a plasma process chamber and method for integrating Atomic Layer Etching (ALE) and radical-enhanced deposition, such as RECVD or REALD, within a single chamber. The system features a switchable blocking capacitor to ground the electrostatic chuck (ESC), eliminating the plasma sheath, and employs high-power, short RF pulses to suppress ion bombardment during ALE surface modification and radical-enhanced deposition steps, enabling efficient processing for applications like forming high aspect ratio structures.

Abstract: Disclosed herein is a real-time optimization system for a plasma process system, specifically focusing on a tailored waveform generator coupled to a chuck. The system incorporates a system controller that divides the process recipe into a setting phase and a processing phase. During the setting phase, optimized slope schemes for voltage waveforms are determined to improve plasma processing performance. The disclosed system features a novel slope scheme comprising multiple slopes, offering enhanced flexibility and precision in controlling ion energy distribution.

Abstract: Disclosed herein is a system and method for integrating atomic layer etching (ALE) and radical-based highly selective etching (HSE) within a single process chamber. The system incorporates embodiments featuring a switchable blocking capacitor for eliminating the plasma sheath by grounding the electrostatic chuck (ESC), along with high-power, short RF pulsing techniques for the plasma source. These novel features enable radical-based processes with significantly reduced ion effects during the surface modification step of ALE and radical-based HSE. Application scenarios for in situ ALE and HSE processes are also presented.

Abstract: Disclosed herein is a system and method for delivering pulsed RF power from multiple generators to a load in semiconductor manufacturing processes. The system employs a Multi-Pole Single-Throw (MPST) switch controlled by a controller that coordinates pulse generation timing across the generators. Latencies between pulse generation and switching for each generator are calibrated to a common clock to ensure precise synchronization. Delay elements can be introduced to place precisely each pulse from different generators into a mater pulse train. Additionally, a tailored waveform generator may be incorporated, particularly in providing bias voltage for an electrostatic chuck.

Abstract: Disclosed is a system and method for delivering pulsed RF power and optionally tailored waveform voltage from multiple generators to multiple loads in semiconductor manufacturing processes. A controller designs master pulse train schemes for each load, defining pulse attributes such as RF frequency, power level, and duration. The controller coordinates pulse generation by the generators and dynamically routes the pulses to designated loads via a Multi-Pole Multi-Throw (MPMT) switch based on the schemes, ensuring flexibility and precision.

Abstract: Disclosed herein is a system and method for delivering pulsed RF power from a single generator to multiple loads in semiconductor manufacturing processes. Using a Single-Pole Multi-Throw (SPMT) switch, the controller dynamically selects a load in real time to receive one or a group of pulses. Each pulse is configurable with distinct RF power, frequency, and duration, enabling precise and flexible power allocation to components such as plasma source coils, zonal electrostatic chucks, or multiple reactors.

Abstract: Disclosed herein are a semiconductor manufacturing system and method for real time ion current measurement during plasma processing. The system features a control circuit with a thermal feedback loop and pulse-width modulation (PWM) for dynamic power regulation. Reductions in heating power required to sustain targeted temperatures, measured before and after plasma ignition, are used to determine ion currents based on data from previously conducted testing procedures.

Abstract: The present invention provides a system and method for precise temperature control of electrostatic chucks (ESCs) in semiconductor manufacturing. The system features a control circuit with a thermal feedback loop and pulse-width modulation (PWM) for dynamic power adjustment, ensuring rapid response and resistance to noise. The ESC is divided into multiple zones, each equipped with a heating unit and temperature sensor, with calibration procedures generating reference voltages for accurate zonal temperature management under varying cold plate temperatures.

Abstract: Disclosed herein is a method for monitoring the stability of process systems in semiconductor manufacturing using digital twins and neural networks. Digital twins of both individual and group process systems are created to identify sources of subsystem parameter changes over time and assess their precise impact on process performance. This method enhances operational efficiency, uniformity, and precision in complex semiconductor manufacturing processes.