Abstract: The present disclosure relates to a method for predicting an amount of water-sealed gas in a high-sulfur water-bearing gas reservoir. The method solves the problem that no method has yet been proposed for predicting the amount of water-sealed gas in a high-sulfur water-bearing gas reservoir. According to the technical solution, the method includes: considering that the volume of the gas reservoir does not change during the production of the constant-volume gas reservoir, deriving, based on a material balance method, a material balance equation of the high-sulfur water-bearing gas reservoir in consideration of water-sealed gas and water-soluble gas, solving and drawing a chart of water-sealed gas in the high-sulfur water-bearing gas reservoir by an iterative algorithm, obtaining a recovery factor of the high-sulfur water-bearing gas reservoir in consideration of water-sealed gas and water-soluble gas, and further obtaining the amount of water-seal gas in the high-sulfur water-bearing gas reservoir.

Abstract: The present disclosure relates to a method for predicting an amount of water-sealed gas in a high-sulfur water-bearing gas reservoir. The method solves the problem that no method has yet been proposed for predicting the amount of water-sealed gas in a high-sulfur water-bearing gas reservoir. According to the technical solution, the method includes: considering that the volume of the gas reservoir does not change during the production of the constant-volume gas reservoir, deriving, based on a material balance method, a material balance equation of the high-sulfur water-bearing gas reservoir in consideration of water-sealed gas and water-soluble gas, solving and drawing a chart of water-sealed gas in the high-sulfur water-bearing gas reservoir by an iterative algorithm, obtaining a recovery factor of the high-sulfur water-bearing gas reservoir in consideration of water-sealed gas and water-soluble gas, and further obtaining the amount of water-seal gas in the high-sulfur water-bearing gas reservoir.

Abstract: Enhancements in lithography for forming an integrated circuit are disclosed. The enhancements include a topography analysis of a design data file to obtain accumulative topography information for different mask levels. The topography information facilitates topography driven optical proximity correction and topography driven lithography.

Abstract: Enhancements in lithography for forming an integrated circuit are disclosed. The enhancements include a topography analysis of a design data file to obtain accumulative topography information for different mask levels. The topography information facilitates topography driven optical proximity correction and topography driven lithography.